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Vishay Semiconductor Diodes Division |
DIODE GP 400V 700MA DO219AB |
Active | Standard | 400V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 3A SOD123HE |
Active | Schottky | 40V | 3A | 520mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 12.37ns | 160µA @ 40V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A DO204AL |
Active | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 2A DO214AC |
Active | Schottky | 60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 600V 1A SOD123FL |
Active | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 2A DO214AC |
Active | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A MICRO SMA |
Active | Schottky | 30V | 1A | 520mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 50pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A MICRO SMA |
Active | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 40V | 50pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1.5A DO214AC |
Active | Standard | 200V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 3A SMA-FL |
Active | Schottky | 45V | 3A | 630mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Surface Mount | DO-221AC, SMA Flat Leads | SMA-FL | -65°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 20V 500MA SOD882D |
Active | Schottky | 20V | 500mA | 440mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 1.5mA @ 20V | 25pF @ 1V, 1MHz | Surface Mount | 2-XDFN | 2-DFN1006D (0.6x1.0) | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A DO214AC |
Active | Standard | 400V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.5A DO214AC |
Active | Standard | 600V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.5A DO214AC |
Active | Standard | 800V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1.5A DO214AC |
Active | Standard | 1000V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE GEN PURP 600V 1A PMDU |
Active | Standard | 400V | 1A | 980mV @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Nexperia USA Inc. |
DIODE SCHOTTKY 30V 100MA SOD882 |
Active | Schottky | 30V | 100mA | 450mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 10V | 10pF @ 1V, 1MHz | Surface Mount | SOD-882 | DFN1006-2 | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 1KV 1.5A DO214AC |
Active | Avalanche | 1000V | 1.5A | 1.6V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 1µA @ 1000V | 13pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SUB SMA |
Active | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Rohm Semiconductor |
SCHOTTKY BARRIER DIODES |
Active | Schottky | 60V | 1A | 820mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 6.15ns | 1µA @ 60V | - | Surface Mount | 2-SMD, Flat Lead | TUMD2M | 150°C (Max) |
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Rohm Semiconductor |
SCHOTTKY BARRIER DIODE AEC-Q101 |
Active | Schottky | 100V | 1A | 840mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 6.7ns | 300nA @ 100V | - | Surface Mount | 2-SMD, Flat Lead | TUMD2M | 150°C (Max) |
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Rohm Semiconductor |
SCHOTTKY BARRIER DIODE |
Active | Schottky | 30V | 1A | 730mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 4.7ns | 300nA @ 30V | - | Surface Mount | 2-SMD, Flat Lead | TUMD2M | 150°C (Max) |
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Rohm Semiconductor |
SCHOTTKY BARRIER DIODE AEC-Q101 |
Active | Schottky | 40V | 1A | 790mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 6.7ns | 500nA @ 40V | - | Surface Mount | 2-SMD, Flat Lead | TUMD2M | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
Active | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Diodes Incorporated |
SCHOTTKY RECTIFIER SMA TR 10K |
Active | Schottky | 45V | 3A | 480mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A SUB SMA |
Active | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.7A DO219AB |
Active | Standard | 400V | 1.7A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 920ns | 5µA @ 400V | 13pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Bourns Inc. |
DIODE GEN PURP 100V 1A DO214AC |
Active | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 2A MICRO SMA |
Active | Schottky | 30V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | 35pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO221AC |
Active | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.47µs | 5µA @ 1000V | 7.9pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 2A MICRO SMA |
Active | Schottky | 20V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 20V | 35pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 2A SOD123W |
Active | Schottky | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 200V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 2A MICRO SMA |
Active | Schottky | 40V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 40V | 35pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 30V 1A SOD323 |
Active | Schottky | 30V | 1A | 550mV @ 1A | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 15V | 25pF @ 5V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -65°C ~ 150°C |
|
ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
Active | Standard | 200V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO219AB |
Active | Standard | 400V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 5µA @ 400V | 7.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 30V 500MA SOT23 |
Active | Schottky | 30V | 500mA (DC) | 430mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | 70pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GP 200V 700MA DO219AB |
Active | Standard | 200V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A MPG06 |
Active | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 100V 700MA DO219AB |
Active | Standard | 100V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
|
ON Semiconductor |
DIODE GP 800V 1.5A DO214AC |
Active | Standard | 800V | 1.5A | 1.7V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 150°C |
|
Toshiba Semiconductor and Storage |
X34 PB-F CST2B SBD DIODE VR30V |
Active | Schottky | 30V | 500mA | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 118pF @ 0V, 1MHz | Surface Mount | SOD-882 | CST2B | 125°C (Max) |
|
ON Semiconductor |
DIODE SCHOTTKY 50V 100MA 3MCP |
Active | Schottky | 50V | 100mA | 550mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 15µA @ 25V | 4.4pF @ 10V, 1MHz | Surface Mount | SC-70, SOT-323 | 3-MCP | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 2A DO214AC |
Active | Schottky | 100V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A DO214AC |
Active | Schottky | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A DO214AC |
Active | Schottky | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
ON Semiconductor |
DIODE GEN PURP 300V 1A AXIAL |
Active | Standard | 300V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 300V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A |
Active | Avalanche | 200V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
Active | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 2A DO204AC |
Active | Standard | 1000V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |