Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 700MA DO219AB ActiveStandard1000V700mA1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)1.8µs10µA @ 1000V4pF @ 4V, 1MHzSurface MountDO-219ABDO-219AB (SMF)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 500MA SUBSMA ActiveStandard100V500mA1.3V @ 500mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 100V4pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 30V 200MA SOT23-3 ActiveSchottky30V200mA (DC)800mV @ 100mASmall Signal =< 200mA (Io), Any Speed5ns2µA @ 25V10pF @ 1V, 1MHzSurface MountTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)-55°C ~ 125°C
Vishay Semiconductor Diodes Division DIODE GP 800V 700MA DO219AB ActiveStandard800V700mA1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)1.8µs10µA @ 800V4pF @ 4V, 1MHzSurface MountDO-219ABDO-219AB (SMF)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 500MA SUB SMA ActiveStandard50V500mA1.3V @ 500mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 50V4pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Rohm Semiconductor DIODE GEN PURP 400V 1A PMDTM ActiveStandard400V1A1.3V @ 800mAFast Recovery =< 500ns, > 200mA (Io)400ns10µA @ 400V
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Surface MountSOD-128PMDTM150°C (Max)
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 800MA SUBSMA ActiveStandard800V800mA1.3V @ 800mAFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 800V10pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 800MA SUBSMA ActiveStandard600V800mA1.3V @ 800mAFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 600V10pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 800MA SUB SMA ActiveStandard50V800mA1.3V @ 800mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 50V10pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 800MA SUBSMA ActiveStandard400V800mA1.3V @ 800mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 400V10pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO214AC ActiveStandard800V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 800V10pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 1A SOD123HE ActiveSchottky100V1A800mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 100V80pF @ 4V, 1MHzSurface MountSOD-123HSOD-123HE-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 150MW 60V SOD323 ActiveSchottky60V30mA (DC)1V @ 15mASmall Signal =< 200mA (Io), Any Speed1ns200nA @ 50V2pF @ 0V, 1MHzSurface MountSC-76, SOD-323SOD-323-55°C ~ 125°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 20V 15A SOD80 ActiveSchottky20V
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600mV @ 200mAFast Recovery =< 500ns, > 200mA (Io)10ns5µA @ 10V50pF @ 0V, 1MHzSurface MountSOD-80 VariantSOD-80 QuadroMELF125°C (Max)
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 120V 2A MICROSMP ActiveSchottky120V2A980mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 120V140pF @ 4V, 1MHzSurface MountMicroSMPMicroSMP-40°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 150V 2A MICROSMP ActiveSchottky150V2A
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Fast Recovery =< 500ns, > 200mA (Io)
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50µA @ 150V100pF @ 4V, 1MHzSurface MountMicroSMPMicroSMP-40°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 350MA 30V SOD123 ActiveSchottky30V350mA600mV @ 200mAFast Recovery =< 500ns, > 200mA (Io)10ns5µA @ 20V50pF @ 0V, 1MHzSurface MountSOD-123SOD-123-55°C ~ 125°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 45V 2A MICROSMP ActiveSchottky45V2A560mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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350µA @ 45V300pF @ 4V, 1MHzSurface MountMicroSMPMicroSMP-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 60V 2A MICROSMP ActiveSchottky60V2A630mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 60V195pF @ 4V, 1MHzSurface MountMicroSMPMicroSMP-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 60V 1A MICROSMP ActiveSchottky60V1A600mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 60V130pF @ 4V, 1MHzSurface MountMicroSMPMicroSMP (DO-219AD)-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 120V 1A MICROSMP ActiveSchottky120V1A870mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 120V100pF @ 4V, 1MHzSurface MountMicroSMPMicroSMP-40°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GP 60V 200MA MICROMELF ActiveStandard60V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed
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1nA @ 30V3pF @ 0V, 1MHzSurface Mount2-SMD, No LeadMicroMELF-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 45V 1A MICROSMP ActiveSchottky45V1A530mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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250µA @ 45V200pF @ 4V, 1MHzSurface MountMicroSMPMicroSMP-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 150V 1A MICROSMP ActiveSchottky150V1A1.21V @ 1AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 150V65pF @ 4V, 1MHzSurface MountMicroSMPMicroSMP-40°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 125V 200MA SOD80 ActiveStandard125V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed
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1nA @ 60V3pF @ 0V, 1MHzSurface MountSOD-80 VariantSOD-80 QuadroMELF-65°C ~ 175°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1.2A SOD123 ActiveStandard600V1.2A1.3V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)300ns5µA @ 600V
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Surface MountSOD-123HSOD-123HE-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A SOD123W ActiveStandard600V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 600V
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Surface MountSOD-123WSOD123W-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1.2A SOD123 ActiveStandard800V1.2A1.3V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)300ns5µA @ 800V
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Surface MountSOD-123HSOD-123HE-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 1.2A SOD123HE ActiveStandard1000V1.2A1.3V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)300ns5µA @ 1000V
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Surface MountSOD-123HSOD-123HE-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 1A SOD123W ActiveStandard1000V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 1000V
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Surface MountSOD-123WSOD123W-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 1A SOD123HE ActiveSchottky30V1A500mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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400µA @ 30V80pF @ 4V, 1MHzSurface MountSOD-123HSOD-123HE-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 1A SOD123HE ActiveSchottky40V1A550mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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400µA @ 40V80pF @ 4V, 1MHzSurface MountSOD-123HSOD-123HE-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 50V 30MA SOD80 ActiveSchottky50V30mA (DC)1V @ 15mASmall Signal =< 200mA (Io), Any Speed
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200nA @ 50V1.6pF @ 1V, 1MHzSurface MountDO-213AC, MINI-MELF, SOD-80SOD-80 MiniMELF125°C (Max)
Micro Commercial Co DIODE GPP SUPER FAST 2A DO-15 ActiveStandard200V2A950mV @ 40VFast Recovery =< 500ns, > 200mA (Io)35ns
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60pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-15-65°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SOD123W ActiveStandard200V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V
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Surface MountSOD-123WSOD123W-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A SOD123W ActiveStandard800V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 800V
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Surface MountSOD-123WSOD123W-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 1A SOD123HE ActiveSchottky20V1A450mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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400µA @ 20V80pF @ 4V, 1MHzSurface MountSOD-123HSOD-123HE-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 1A SOD123HE ActiveSchottky60V1A700mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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400µA @ 60V80pF @ 4V, 1MHzSurface MountSOD-123HSOD-123HE-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO204AL ActiveStandard600V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 600V10pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Comchip Technology DIODE SCHOTTKY 30V 500MA 0402C ActiveSchottky30V500mA580mV @ 200mAFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 30V36pF @ 1V, 1MHzSurface Mount0402 (1006 Metric)0402C/SOD-923F-40°C ~ 125°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 30V 15A SOD80 ActiveSchottky30V
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600mV @ 200mAFast Recovery =< 500ns, > 200mA (Io)10ns5µA @ 20V50pF @ 0V, 1MHzSurface MountSOD-80 VariantSOD-80 QuadroMELF125°C (Max)
Comchip Technology DIODE SCHOTTKY 30V 200MA 0603 ActiveSchottky30V200mA500mV @ 200mASmall Signal =< 200mA (Io), Any Speed
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30µA @ 30V9pF @ 10V, 1MHzSurface Mount2-SMD, No Lead0603C/SOD-523F-40°C ~ 125°C
Nexperia USA Inc. DIODE SCHOTTKY 30V 200MA SOT323 ActiveSchottky30V200mA (DC)800mV @ 100mASmall Signal =< 200mA (Io), Any Speed
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2µA @ 25V10pF @ 1V, 1MHzSurface MountSC-70, SOT-323SOT-323-3150°C (Max)
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 40V 30MA SOD80 ActiveSchottky40V30mA900mV @ 15mASmall Signal =< 200mA (Io), Any Speed
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200nA @ 30V2.2pF @ 0V, 1MHzSurface MountSOD-80 VariantSOD-80 QuadroMELF125°C (Max)
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 500MA SOD123 ActiveSchottky30V500mA430mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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130µA @ 30V170pF @ 0V, 1MHzSurface MountSOD-123SOD-123-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A MICRO SMA ActiveStandard600V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)780ns1µA @ 600V5pF @ 4V, 1MHzSurface Mount2-SMD, Flat LeadMicro SMA-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 1A SOD123W ActiveSchottky150V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 150V
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Surface MountSOD-123WSOD123W-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO204AL ActiveStandard600V1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 600V10pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 1A SUB SMA ActiveStandard100V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 100V20pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA ActiveStandard200V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 200V20pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C