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Vishay Semiconductor Diodes Division |
DIODE GP 800V 500MA DO219AB |
Active | Standard | 800V | 500mA | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 2µA @ 800V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Micro Commercial Co |
3A45VSCHOTTKYDO-221AC PACKAGE |
Active | Schottky | 45V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | 180pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SMA-FL) | -50°C ~ 125°C |
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Micro Commercial Co |
3A40VSCHOTTKYDO-221AC PACKAGE |
Active | Schottky | 40V | 3A | 450mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SMA-FL) | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 1A PMDTM |
Active | Schottky | 30V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A DO214AA |
Active | Standard | 600V | 5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 600V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 50V 2A SMB |
Active | Standard | 50V | 2A | 940mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 50V | - | Surface Mount | DO-214AA, SMB | SMB | -60°C ~ 175°C |
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AVX Corporation |
DIODE SCHOTTKY 40V 1A SMA |
Active | Schottky | 40V | 1A (DC) | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | 2-SMD, No Lead | 2010/DO-214AC | -55°C ~ 125°C |
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Comchip Technology |
DIODE GEN PURP 200V 1A MINISMA |
Active | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Surface Mount | SOD-123T | Mini SMA/SOD-123 | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 3A PMDTM |
Active | Schottky | 60V | 3A | 560mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 100V 2A AXIAL |
Active | Standard | 100V | 2A | 940mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 2A DO220AA |
Active | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 130pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | - |
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Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
Active | Schottky | 30V | 2A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 800nA @ 30V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
Active | Schottky | 40V | 2A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 40V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 1A PMDTM |
Active | Schottky | 60V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 2A DO214AA |
Active | Standard | 600V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2.4A DO220AA |
Active | Schottky | 60V | 2.4A (DC) | 630mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 900µA @ 60V | 250pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AC |
Active | Schottky | 40V | 2A | 490mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOD123 |
Active | Schottky | 30V | 200mA (DC) | 600mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 25V | 1.5pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 125°C |
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Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
Active | Schottky | 40V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 40V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
Active | Schottky | 30V | 2A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO221AC |
Active | Standard | 200V | 3A (DC) | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 200V | 19pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5A DO221AC |
Active | Schottky | 60V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 60V | 580pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 3A DO214AB |
Not For New Designs | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 3A DO214AB |
Not For New Designs | Standard | 800V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 3A DO214AB |
Active | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AB |
Not For New Designs | Standard | 600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AB |
Active | Standard | 600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 3A TO277A |
Active | Schottky | 150V | 3A | 860mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 100µA @ 150V | 150pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
Not For New Designs | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 60V 2A SOT1061 |
Active | Schottky | 60V | 2A | 575mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 5.5ns | 250µA @ 60V | 250pF @ 1V, 1MHz | Surface Mount | 3-SMD, No Lead | DFN2020D-3 | 150°C (Max) |
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Nexperia USA Inc. |
DIODE SCHOTTKY 40V 2A SOT1061 |
Active | Schottky | 40V | 2A | 535mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100µA @ 40V | 270pF @ 1V, 1MHz | Surface Mount | 3-SMD, No Lead | DFN2020D-3 | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AA |
Active | Standard | 100V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A DO214AA |
Active | Standard | 600V | 5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 600V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 5A DO214AA |
Active | Standard | 800V | 5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 800V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 3A DO214AB |
Not For New Designs | Standard | 1000V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 1000V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AA |
Active | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AA |
Active | Standard | 50V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
Not For New Designs | Standard | 200V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 200V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AB |
Not For New Designs | Standard | 600V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
Active | Standard | 200V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 200V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AB |
Active | Standard | 400V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AB |
Active | Standard | 600V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 3A DO214AB |
Active | Standard | 800V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 3A DO214AB |
Active | Standard | 1000V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 1000V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
Active | Schottky | 40V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A SUB SMA |
Active | Schottky | 150V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 2A DO214AA |
Active | Standard | 100V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 2A DO214AC |
Active | Standard | 600V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 2µA @ 600V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 20V 2A 3HUSON |
Active | Schottky | 20V | 2A | 420mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1.9mA @ 20V | 175pF @ 1V, 1MHz | Surface Mount | 3-PowerUDFN | 3-HUSON (2x2) | 150°C (Max) |
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Nexperia USA Inc. |
DIODE SCHOTTKY 30V 2A 3HUSON |
Active | Schottky | 30V | 2A | 470mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 47ns | 2.5mA @ 30V | 150pF @ 1V, 1MHz | Surface Mount | 3-UDFN | 3-HUSON (2x2) | 150°C (Max) |