Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Vishay Semiconductor Diodes Division DIODE GP 800V 500MA DO219AB ActiveStandard800V500mA1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)300ns2µA @ 800V4pF @ 4V, 1MHzSurface MountDO-219ABDO-219AB (SMF)-55°C ~ 150°C
Micro Commercial Co 3A45VSCHOTTKYDO-221AC PACKAGE ActiveSchottky45V3A500mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 45V180pF @ 4V, 1MHzSurface MountDO-221AC, SMA Flat LeadsDO-221AC (SMA-FL)-50°C ~ 125°C
Micro Commercial Co 3A40VSCHOTTKYDO-221AC PACKAGE ActiveSchottky40V3A450mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Surface MountDO-221AC, SMA Flat LeadsDO-221AC (SMA-FL)-55°C ~ 150°C
Rohm Semiconductor DIODE SCHOTTKY 30V 1A PMDTM ActiveSchottky30V1A480mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 30V
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Surface MountSOD-128PMDTM150°C (Max)
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A DO214AA ActiveStandard600V5A1.1V @ 5AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 600V40pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 50V 2A SMB ActiveStandard50V2A940mV @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 50V
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Surface MountDO-214AA, SMBSMB-60°C ~ 175°C
AVX Corporation DIODE SCHOTTKY 40V 1A SMA ActiveSchottky40V1A (DC)500mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 40V
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Surface Mount2-SMD, No Lead2010/DO-214AC-55°C ~ 125°C
Comchip Technology DIODE GEN PURP 200V 1A MINISMA ActiveStandard200V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 200V
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Surface MountSOD-123TMini SMA/SOD-123-55°C ~ 150°C
Rohm Semiconductor DIODE SCHOTTKY 60V 3A PMDTM ActiveSchottky60V3A560mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 60V
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Surface MountSOD-128PMDTM150°C (Max)
ON Semiconductor DIODE GEN PURP 100V 2A AXIAL ActiveStandard100V2A940mV @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 100V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 20V 2A DO220AA ActiveSchottky20V2A500mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 20V130pF @ 4V, 1MHzSurface MountDO-220AADO-220AA (SMP)
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Rohm Semiconductor AUTOMOTIVE SCHOTTKY BARRIER DIOD ActiveSchottky30V2A
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Fast Recovery =< 500ns, > 200mA (Io)
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800nA @ 30V
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Surface MountSOD-128PMDTM150°C (Max)
Rohm Semiconductor AUTOMOTIVE SCHOTTKY BARRIER DIOD ActiveSchottky40V2A
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Fast Recovery =< 500ns, > 200mA (Io)
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1µA @ 40V
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Surface MountSOD-128PMDTM150°C (Max)
Rohm Semiconductor DIODE SCHOTTKY 60V 1A PMDTM ActiveSchottky60V1A650mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 60V
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Surface MountSOD-128PMDTM150°C (Max)
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO214AA ActiveStandard600V2A1.7V @ 2AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 600V30pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 60V 2.4A DO220AA ActiveSchottky60V2.4A (DC)630mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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900µA @ 60V250pF @ 4V, 1MHzSurface MountDO-220AADO-220AA (SMP)-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 40V 2A DO214AC ActiveSchottky40V2A490mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 40V
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Surface MountDO-214AC, SMADO-214AC (SMA)-65°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 30V 200MA SOD123 ActiveSchottky30V200mA (DC)600mV @ 10mASmall Signal =< 200mA (Io), Any Speed
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200nA @ 25V1.5pF @ 0V, 1MHzSurface MountSOD-123SOD-123-55°C ~ 125°C
Rohm Semiconductor AUTOMOTIVE SCHOTTKY BARRIER DIOD ActiveSchottky40V3A
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Fast Recovery =< 500ns, > 200mA (Io)
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50µA @ 40V
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Surface MountSOD-128PMDTM150°C (Max)
Rohm Semiconductor AUTOMOTIVE SCHOTTKY BARRIER DIOD ActiveSchottky30V2A
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Fast Recovery =< 500ns, > 200mA (Io)
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200µA @ 30V
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Surface MountSOD-128PMDTM150°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A DO221AC ActiveStandard200V3A (DC)1.1V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 200V19pF @ 4V, 1MHzSurface MountDO-221AC, SMA Flat LeadsDO-221AC (SlimSMA)-55°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 60V 5A DO221AC ActiveSchottky60V5A660mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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350µA @ 60V580pF @ 4V, 1MHzSurface MountDO-221AC, SMA Flat LeadsDO-221AC (SlimSMA)-40°C ~ 175°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO214AB Not For New DesignsStandard1000V3A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 1000V50pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO214AB Not For New DesignsStandard800V3A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 800V50pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO214AB ActiveStandard1000V3A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 1000V50pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO214AB Not For New DesignsStandard600V3A1.3V @ 3AFast Recovery =< 500ns, > 200mA (Io)250ns10µA @ 600V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO214AB ActiveStandard600V3A1.3V @ 3AFast Recovery =< 500ns, > 200mA (Io)250ns10µA @ 600V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 3A TO277A ActiveSchottky150V3A860mV @ 3AFast Recovery =< 500ns, > 200mA (Io)20ns100µA @ 150V150pF @ 4V, 1MHzSurface MountTO-277, 3-PowerDFNTO-277A (SMPC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AB Not For New DesignsStandard200V3A950mV @ 3AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V45pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Nexperia USA Inc. DIODE SCHOTTKY 60V 2A SOT1061 ActiveSchottky60V2A575mV @ 2AFast Recovery =< 500ns, > 200mA (Io)5.5ns250µA @ 60V250pF @ 1V, 1MHzSurface Mount3-SMD, No LeadDFN2020D-3150°C (Max)
Nexperia USA Inc. DIODE SCHOTTKY 40V 2A SOT1061 ActiveSchottky40V2A535mV @ 2AFast Recovery =< 500ns, > 200mA (Io)6ns100µA @ 40V270pF @ 1V, 1MHzSurface Mount3-SMD, No LeadDFN2020D-3150°C (Max)
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO214AA ActiveStandard100V3A1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 100V80pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A DO214AA ActiveStandard600V5A1.1V @ 5AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 600V40pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 5A DO214AA ActiveStandard800V5A1.1V @ 5AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 800V40pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO214AB Not For New DesignsStandard1000V3A1.15V @ 3AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 1000V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO214AA ActiveStandard400V3A1.3V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 400V80pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO214AA ActiveStandard50V3A1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 50V80pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AB Not For New DesignsStandard200V3A1.15V @ 3AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 200V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO214AB Not For New DesignsStandard600V3A1.15V @ 3AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 600V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AB ActiveStandard200V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 200V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO214AB ActiveStandard400V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 400V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO214AB ActiveStandard600V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 600V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO214AB ActiveStandard800V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 800V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO214AB ActiveStandard1000V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 1000V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Rohm Semiconductor AUTOMOTIVE SCHOTTKY BARRIER DIOD ActiveSchottky40V1A
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Fast Recovery =< 500ns, > 200mA (Io)
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100µA @ 40V
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Surface MountSOD-128PMDTM150°C (Max)
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 2A SUB SMA ActiveSchottky150V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Surface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 2A DO214AA ActiveStandard100V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V25pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO214AC ActiveStandard600V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)55ns2µA @ 600V20pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Nexperia USA Inc. DIODE SCHOTTKY 20V 2A 3HUSON ActiveSchottky20V2A420mV @ 2AFast Recovery =< 500ns, > 200mA (Io)50ns1.9mA @ 20V175pF @ 1V, 1MHzSurface Mount3-PowerUDFN3-HUSON (2x2)150°C (Max)
Nexperia USA Inc. DIODE SCHOTTKY 30V 2A 3HUSON ActiveSchottky30V2A470mV @ 2AFast Recovery =< 500ns, > 200mA (Io)47ns2.5mA @ 30V150pF @ 1V, 1MHzSurface Mount3-UDFN3-HUSON (2x2)150°C (Max)