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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 2A DO214AC |
Active | Standard | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO214AC |
Active | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 2A DO214AC |
Active | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 2A DO214AC |
Active | Standard | 100V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 2A DO214AC |
Active | Standard | 300V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
Active | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.7A DO219AB |
Active | Standard | 200V | 1.7A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 920ns | 5µA @ 200V | 13pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.7A DO219AB |
Active | Standard | 600V | 1.7A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 920ns | 5µA @ 600V | 13pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 3A SOD123HE |
Active | Schottky | 45V | 3A | 470mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A SOD123HE |
Active | Schottky | 60V | 3A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 400V 1A SMB |
Active | Standard | 400V | 1A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 400V | - | Surface Mount | DO-214AA, SMB | SMB | - |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A SUB SMA |
Active | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 8pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A SUB SMA |
Active | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 1A SUB SMA |
Active | Standard | 300V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 8pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1.5A DO214AC |
Active | Standard | 50V | 1.5A | 1V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1.5A DO214AC |
Active | Standard | 200V | 1.5A | 1V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 1.5A DO214AC |
Active | Standard | 300V | 1.5A | 1V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A DO214AC |
Active | Standard | 400V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.5A DO214AC |
Active | Standard | 600V | 1.5A | 1.7V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1.5A DO214AC |
Active | Standard | 100V | 1.5A | 1V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 800V 1A SMA |
Active | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO204AC |
Active | Standard | 200V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 35pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 700MA DO219AB |
Active | Standard | 1000V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 1000V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A SOD123W |
Active | Schottky | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 150V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 3A SOD123W |
Active | Schottky | 150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 150V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO220AA |
Active | Schottky | 60V | 1A | 590mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 80pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AA |
Active | Standard | 200V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 20V 500MA SOD323 |
Active | Schottky | 20V | 500mA (DC) | 390mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 80pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 3A SOD123HE |
Active | Schottky | 45V | 3A | 470mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A SOD123HE |
Active | Schottky | 60V | 3A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 3A SOD123W |
Active | Schottky | 45V | 3A | 470mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A SOD123W |
Active | Schottky | 60V | 3A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 400V 500MA DO219AB |
Active | Standard | 400V | 500mA | 1.15V @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 400V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A SOD123HE |
Active | Schottky | 60V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 3A SOD123HE |
Active | Schottky | 45V | 3A | 570mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 250V 200MA SOD323 |
Active | Standard | 250V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 40nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 1KV 1.5A DO214AC |
Active | Avalanche | 1000V | 1.5A | 1.6V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 1µA @ 1000V | 13pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 1A SUB SMA |
Active | Standard | 500V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 8pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
3A100VSMFTRENCH SKY RECT. |
Active | Schottky | 100V | 3A | 830mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 85µA @ 100V | 240pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 3A SOD123W |
Active | Schottky | 150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 150V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO204AL |
Active | Schottky | 60V | 2A | 680mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 2A SOD123W |
Active | Schottky | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 200V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 3A SOD123W |
Active | Schottky | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 200V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A SOD123W |
Active | Schottky | 60V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO214AA |
Active | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 80pF @ 5V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
SMC Diode Solutions |
DIODE GEN PURP 800V 3A SMB |
Active | Standard | 800V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 500MA 3MCP |
Active | Schottky | 30V | 500mA | 550mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 30µA @ 15V | 16pF @ 10V, 1MHz | Surface Mount | SC-70, SOT-323 | 3-MCP | -55°C ~ 125°C |
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Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
Active | Schottky | 40V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 40V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 2A DO214AC |
Active | Standard | 50V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 2A SMA |
Active | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 200pF @ 40V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |