Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 1.5A DO214AC ActiveStandard100V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 100V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1.5A DO214AC ActiveStandard200V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
ON Semiconductor DIODE GP 50V 1A SOD123F ActiveStandard50V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 50V4pF @ 4V, 1MHzSurface MountSOD-123FSOD-123F-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1.5A DO214AC ActiveStandard50V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 50V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A DO214AC ActiveStandard200V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 200V16pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 1A DO214AC ActiveStandard100V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 100V16pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A DO214AC ActiveStandard300V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 300V18pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Comchip Technology DIODE SCHOTTKY 40V 3A DO214AC ActiveSchottky40V3A500mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V150pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 125°C
Micro Commercial Co DIODE GEN PURP 200V 2A DO214AA ActiveStandard200V2A1.15V @ 2AStandard Recovery >500ns, > 200mA (Io)2µs10µA @ 200V
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Surface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Comchip Technology DIODE GEN PURP 400V 1A SOD123H ActiveStandard400V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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5µA @ 400V
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Surface MountSOD-123HSOD-123H-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A SOD123W ActiveStandard400V1A1.25V @ 1AFast Recovery =< 500ns, > 200mA (Io)20ns1µA @ 400V25pF @ 4V, 1MHzSurface MountSOD-123WSOD123W-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A SOD123W ActiveStandard600V1A1.5V @ 1AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 600V15pF @ 4V, 1MHzSurface MountSOD-123WSOD123W-55°C ~ 150°C
Micro Commercial Co DIODE SCHOTTKY 40V 1A SOD123FL ActiveSchottky40V1A400mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Surface MountSOD-123FSOD-123FL-55°C ~ 150°C
Rohm Semiconductor DIODE SCHOTTKY 40V 3A PMDTM ActiveSchottky40V3A670mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 40V
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Surface MountSOD-128PMDTM150°C (Max)
ON Semiconductor DIODE SCHOTTKY 30V 1A SOD323HE ActiveSchottky30V1A550mV @ 1AFast Recovery =< 500ns, > 200mA (Io)5.6ns50µA @ 30V55pF @ 4V, 1MHzSurface Mount2-SMD, Flat LeadSOD-323HE-55°C ~ 150°C
Rohm Semiconductor DIODE GEN PURP 200V 1A PMDTM ActiveStandard200V1A870mV @ 1AFast Recovery =< 500ns, > 200mA (Io)25ns10µA @ 200V
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Surface MountSOD-128PMDTM150°C (Max)
Taiwan Semiconductor Corporation DIODE 1A 200V AEC-Q101 SOD-1 ActiveStandard200V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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1µA @ 200V9pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE 1A 400V AEC-Q101 SOD-1 ActiveStandard400V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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1µA @ 400V9pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE 1A 600V AEC-Q101 SOD-1 ActiveStandard600V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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1µA @ 600V9pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE 1A 800V AEC-Q101 SOD-1 ActiveStandard800V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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1µA @ 800V9pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE 1A 1000V AEC-Q101 SOD- ActiveStandard1000V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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1µA @ 1000V9pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Micro Commercial Co DIODE GEN PURP 1A 600V SMA ActiveStandard600V1A1.25V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 600V15pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO219AB ActiveStandard600V1A1.05V @ 1AStandard Recovery >500ns, > 200mA (Io)780ns5µA @ 600V7.5pF @ 4V, 1MHzSurface MountDO-219ABDO-219AB (SMF)-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 2A SUB SMA ActiveSchottky40V2A500mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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400µA @ 40V
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Surface MountDO-219ABSub SMA-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE ActiveStandard200V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V7pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE ActiveStandard400V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 400V7pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE ActiveStandard600V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 600V7pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE ActiveStandard800V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 800V7pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE ActiveStandard1000V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 1000V7pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 2A SUB SMA ActiveSchottky20V2A500mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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400µA @ 20V
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Surface MountDO-219ABSub SMA-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 2A SUB SMA ActiveSchottky30V2A500mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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400µA @ 30V
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Surface MountDO-219ABSub SMA-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 2A SUB SMA ActiveSchottky50V2A700mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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400µA @ 50V
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Surface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 2A SUB SMA ActiveSchottky60V2A700mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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400µA @ 60V
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Surface MountDO-219ABSub SMA-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GP 400V 700MA DO219AB ActiveStandard400V700mA1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)1.8µs10µA @ 200V4pF @ 4V, 1MHzSurface MountDO-219ABDO-219AB (SMF)-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 1A DO220AA ActiveStandard800V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)1.8µs1µA @ 800V6pF @ 4V, 1MHzSurface MountDO-220AADO-220AA (SMP)-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO220AA ActiveStandard600V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)1.8µs1µA @ 600V6pF @ 4V, 1MHzSurface MountDO-220AADO-220AA (SMP)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 2A SUB SMA ActiveSchottky100V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Surface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 2A SOD123W ActiveSchottky40V2A550mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 40V
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Surface MountSOD-123WSOD123W-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 2A SOD123W ActiveSchottky100V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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20µA @ 100V
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Surface MountSOD-123WSOD123W-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 30V 70MA 3MCP ActiveSchottky30V70mA550mV @ 70mASmall Signal =< 200mA (Io), Any Speed10ns5µA @ 15V3pF @ 10V, 1MHzSurface MountSC-70, SOT-3233-MCP-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1.5A DO214AC ActiveStandard600V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 600V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 1A SOD123HE ActiveSchottky40V1A650mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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1µA @ 40V
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Surface MountSOD-123HSOD-123HE-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 1A SOD123HE ActiveSchottky60V1A700mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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1µA @ 60V
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Surface MountSOD-123HSOD-123HE-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1.5A DO214AC ActiveStandard400V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 400V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1.5A DO214AC ActiveStandard800V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 800V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 1.5A DO214AC ActiveStandard1000V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 1000V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 40V 1A SOD123FL ActiveSchottky40V1A560mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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30µA @ 40V
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Surface MountSOD-123FSOD-123FL-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 2A SOD123W ActiveSchottky40V2A550mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 40V
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Surface MountSOD-123WSOD123W-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 2A SOD123W ActiveSchottky100V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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20µA @ 100V
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Surface MountSOD-123WSOD123W-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 2A SOD123W ActiveSchottky60V2A700mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 60V
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Surface MountSOD-123WSOD123W-55°C ~ 150°C