Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - 1T2G A1G 1T3G A1G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1T2G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	Active	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T3G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	Active	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T4G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	Active	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T5G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	Active	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T6G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	Active	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T7G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	Active	Standard	-	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T2G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	Active	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T3G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	Active	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T4G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	Active	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T5G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	Active	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T6G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	Active	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T7G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	Active	Standard	-	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
BAS21 RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 250V 200MA SOT23	Active	Standard	250V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
1N4006G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	Active	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4007G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	Active	Standard	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4006G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	Active	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4007G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	Active	Standard	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4006G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	Active	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4006G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	Active	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4007G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	Active	Standard	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
TS4148C RCG	Taiwan Semiconductor Corporation	DIODE GEN PURP 75V 150MA 0603	Active	Standard	75V	150mA	1.25V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	0603 (1608 Metric)	0603	-55°C ~ 150°C
1N4005GHR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR101G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR102G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR103G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR104G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4001GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4002GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4003GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	Active	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4004GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	Active	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4005GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR101G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR102G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR103G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR104G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAT54AW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOT323	Active	Schottky	30V	200mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	125°C (Max)
BAT54CW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOT323	Active	Schottky	30V	200mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	125°C (Max)
BAT54SW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOT323	Active	Schottky	30V	200mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	125°C (Max)
BAT54W RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOT-323	Active	Schottky	30V	200mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C
RB706F-40 RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 30MA SOT-323	Active	Schottky	45V	30mA	370mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	2pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	125°C (Max)
FR101G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR102G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4005GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR101G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR102G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR103G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR104G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
TSS0230U RGG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 35V 200MA 0603	Active	Schottky	35V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	18pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	0603	-40°C ~ 125°C
RB751V-40 RRG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 30MA SOD323	Active	Schottky	40V	30mA	370mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 30V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-40°C ~ 125°C
1N4934GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single