Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - HERAF1606G C0G TST40L60CW C0G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
HERAF1606G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A ITO220AC	Active	Standard	600V	16A	1.7V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 600V	110pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
TST40L60CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 20A TO220AB	Active	Schottky	60V	20A	630mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
1N4448 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 150MA DO35	Active	Standard	100V	150mA	720mV @ 5mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
LL4448 L0G	Taiwan Semiconductor Corporation	DIODE GP 75V 150MA MINIMELF	Active	Standard	75V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 175°C
LS4148 L0G	Taiwan Semiconductor Corporation	DIODE GP 75V 450MA MINIMELF	Active	Standard	75V	450mA	1V @ 450mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	Mini MELF	-65°C ~ 175°C
LL4148 L0G	Taiwan Semiconductor Corporation	DIODE GP 75V 150MA MINIMELF	Active	Standard	75V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 175°C
1N914B A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 150MA DO35	Active	Standard	100V	150mA	720mV @ 5mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
1N4448W RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 75V 150MA SOD123F	Active	Standard	75V	150mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 150°C
1N4448WS RRG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 150MA SOD323	Active	Standard	100V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	-65°C ~ 150°C
1N914BW RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 75V 150MA SOD123F	Active	Standard	75V	150mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 150°C
1N914BWS RRG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 150MA SOD323	Active	Standard	100V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	-65°C ~ 150°C
1SS400 RKG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOD523	Active	Standard	100V	200mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 80V	4pF @ 500mV, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523F	-55°C ~ 150°C
BAV103 L0G	Taiwan Semiconductor Corporation	DIODE GP 250V 200MA MINIMELF	Active	Standard	250V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 200V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 200°C
BAV103 L1G	Taiwan Semiconductor Corporation	DIODE GP 250V 200MA MINIMELF	Active	Standard	250V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 200V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 200°C
BAV101 L0G	Taiwan Semiconductor Corporation	DIODE GP 250V 200MA MINIMELF	Active	Standard	250V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 200V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 200°C
BAV101 L1G	Taiwan Semiconductor Corporation	DIODE GP 250V 200MA MINIMELF	Active	Standard	250V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 200V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 200°C
MMBD4148 RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOT23	Active	Standard	100V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
1SS400 RSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOD523	Active	Standard	100V	200mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 80V	4pF @ 500mV, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523F	-55°C ~ 150°C
RB520S-30 RKG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOD523F	Active	Schottky	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	-	Surface Mount	SC-79, SOD-523	SOD-523F	-55°C ~ 125°C
RB520S-30 RSG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOD523F	Active	Schottky	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	-	Surface Mount	SC-79, SOD-523	SOD-523F	-55°C ~ 125°C
BAV21 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 250V 200MA DO35	Active	Standard	250V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 250V	5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-55°C ~ 175°C
BAV19 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA DO35	Active	Standard	100V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 100V	5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-55°C ~ 175°C
BAS16 RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 75V 150MA SOT23	Active	Standard	75V	150mA	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
1SS400 RJG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOD523	Active	Standard	100V	200mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 80V	4pF @ 500mV, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523F	-55°C ~ 150°C
BAS19 RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOT23	Active	Standard	100V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
BAS20 RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 200MA SOT23	Active	Standard	150V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
BAS116 RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 75V 200MA SOT23	Active	Standard	75V	200mA	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	3ns	5nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
1N4933G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4933G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1T1G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	Active	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1N4934G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAV19W-G RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOD123	Active	Standard	100V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
BAV20W-G RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 200MA SOD123	Active	Standard	150V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
SD101AW RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 15MA SOD123	Active	Schottky	60V	15mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 60V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
SD101BW RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 15MA SOD123	Active	Schottky	50V	15mA (DC)	950mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 50V	2.1pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
SD101CW RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 15MA SOD123	Active	Schottky	40V	15mA (DC)	900mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 40V	2.2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
SD103AW RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 350MA SOD123	Active	Schottky	40V	350mA	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 40V	50pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C (Max)
SD103BW RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 350MA SOD123	Active	Schottky	30V	350mA	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 30V	50pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C (Max)
SD103CW RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 350MA SOD123	Active	Schottky	20V	350mA	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 20V	50pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C (Max)
1N4933GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4933GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1T1G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	Active	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T2G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	Active	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T3G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	Active	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T4G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	Active	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T5G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	Active	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T6G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	Active	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T7G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	Active	Standard	-	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T1G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	Active	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single