Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - HS5G V7G S3G R7G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
HS5G V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AB	Active	Standard	400V	5A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3G R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Not For New Designs	Standard	400V	3A	1.15V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5G R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AB	Not For New Designs	Standard	400V	5A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3K R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Not For New Designs	Standard	800V	3A	1.15V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR360S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Not For New Designs	Standard	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
SK36B R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO214AA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS5M R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 5A DO214AB	Not For New Designs	Standard	1000V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR360S V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
SK34B R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO214AA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
S15GCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 15A DO214AB	Active	Standard	400V	15A	1.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 400V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS320 V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 200V DO-214AB	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS320 R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Not For New Designs	Standard	200V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S15JC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 15A DO214AB	Active	Standard	600V	15A	1.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 600V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S15KC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 15A DO214AB	Active	Standard	800V	15A	1.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 800V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S15GC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 15A DO214AB	Active	Standard	400V	15A	1.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 400V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK520C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 5A DO214AB	Not For New Designs	Schottky	200V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK59C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO214AB	Not For New Designs	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK510C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 100V DO-214AB	Active	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK86C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 8A 60V DO-214AB	Active	Schottky	60V	8A	750mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK86C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A DO214AB	Not For New Designs	Schottky	60V	8A	750mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TSP15H200S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 15A TO277A	Active	Schottky	200V	15A	890mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 200V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
SK810C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 8A 100V DO-214AB	Active	Schottky	100V	8A	900mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TSP10U120S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 120V 10A TO277A	Active	Schottky	120V	10A	780mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
TSP15U120S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 120V 15A TO277A	Active	Schottky	120V	15A	750mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
LL4148 L1G	Taiwan Semiconductor Corporation	DIODE GP 100V 150MA MINIMELF	Active	Standard	100V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	54ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 175°C
1N4148WS-G RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 75V 150MA SOD323	Active	Standard	75V	150mA	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
1N5406G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5407G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO201AD	Active	Standard	800V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR304 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO201AD	Active	Schottky	40V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR306 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO201AD	Active	Schottky	60V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR310 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO201AD	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS36 V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 60V DO-214AB	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SR315 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO201AD	Active	Schottky	150V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR320 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO201AD	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
MUR460S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO214AB	Not For New Designs	Standard	600V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
SF36G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF38G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER305G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR515 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A DO201AD	Active	Schottky	150V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SK56CHR7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO214AB	Active	Schottky	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SF34G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	Active	Standard	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR806 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A DO201AD	Active	Schottky	60V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF64G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A DO201AD	Active	Standard	200V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
MUR420 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
SF66G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A DO201AD	Active	Standard	400V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF68G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A DO201AD	Active	Standard	600V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF1006G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A TO220AB	Active	Standard	400V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
TST10L60CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A TO220AB	Active	Schottky	60V	5A	650mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
MBR1060 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 10A TO220AC	Active	Schottky	60V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFAF504G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A ITO220AC	Active	Standard	200V	5A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single