Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 10A ITO220AC ActiveSchottky200V10A1.05V @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 200V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 10A TO220AB ActiveSchottky45V10A530mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 45V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 10A TO220AB ActiveSchottky60V10A630mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 60V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 10A ITO220AB ActiveSchottky60V10A700mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 10A TO220AB ActiveSchottky200V10A900mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 200V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 10A ITO220AB ActiveStandard200V10A975mV @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V70pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A ITO220AC ActiveStandard600V8A2.9V @ 8AFast Recovery =< 500ns, > 200mA (Io)25ns30µA @ 600V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A2.9V @ 8AFast Recovery =< 500ns, > 200mA (Io)25ns30µA @ 600V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A ITO220AC ActiveStandard600V5A1.7V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V70pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 10A TO220AB ActiveSchottky100V10A790mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 100V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 10A TO220AB ActiveSchottky100V10A840mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 10A TO220AB ActiveSchottky150V10A960mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 10A TO220AB ActiveSchottky120V10A930mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 120V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 10A TO220AB ActiveSchottky200V10A990mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 200V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 10A TO220AB ActiveSchottky60V10A650mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V60pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 15A TO220AB ActiveSchottky120V15A880mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 120V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 15A TO220AB ActiveSchottky200V15A960mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 200V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 15A TO220AB ActiveSchottky100V15A820mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 100V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 16A ITO220AB ActiveStandard200V16A975mV @ 16AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V80pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 5A TO220AB ActiveSchottky120V5A790mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 120V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 5A TO220AB ActiveSchottky200V5A910mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 200V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 5A TO220AB ActiveSchottky100V5A700mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 5A TO220AB ActiveSchottky150V5A880mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 10A ITO220AB ActiveStandard600V10A1.7V @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V50pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 10A TO220AC ActiveSchottky100V10A850mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 20A TO220AB ActiveSchottky120V20A800mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 120V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 20A TO220AB ActiveSchottky100V20A750mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 100V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 20A TO220AB ActiveSchottky150V20A860mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 20A ITO220AB ActiveSchottky60V20A700mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 15A TO220AB ActiveSchottky60V15A600mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 15A TO220AB ActiveSchottky45V15A550mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 45V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 10A TO220AB ActiveSchottky45V10A510mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 45V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 10A TO220AB ActiveSchottky60V10A540mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 8A TO220AC ActiveStandard
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8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)80ns10µA @ 1000V55pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 600V
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Through HoleTO-220-2TO-220AC-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 10A TO220AB ActiveSchottky100V10A790mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 100V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 15A TO220AB ActiveSchottky60V15A570mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 15A TO220AB ActiveSchottky45V15A540mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 45V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 10A TO220AB ActiveSchottky120V10A900mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 120V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 10A TO220AB ActiveSchottky150V10A900mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 10A TO220AB ActiveSchottky200V10A930mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 200V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 15A TO220AB ActiveSchottky45V15A550mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 45V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 15A TO220AB ActiveSchottky60V15A580mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 20A TO220AB ActiveSchottky45V20A590mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 45V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 15A TO220AB ActiveSchottky100V15A780mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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250µA @ 100V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 15A TO220AB ActiveSchottky120V15A880mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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250µA @ 120V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 15A TO220AB ActiveSchottky200V15A920mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 200V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 15A TO220AB ActiveSchottky150V15A900mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 150V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 30A TO247AD ActiveStandard200V30A950mV @ 15AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V175pF @ 4V, 1MHzThrough HoleTO-247-3TO-247AD (TO-3P)-55°C ~ 150°C