Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SF3008PT C0G RB500V-40 RRG - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SF3008PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	1.7V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
RB500V-40 RRG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 100MA SOD323F	Active	Schottky	40V	100mA	450mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	6pF @ 10V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	-40°C ~ 125°C
ES2D R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS16LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SOD123W	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
TSSA5U50 E3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO214AC	Active	Schottky	50V	5A	540mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S4J R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO214AB	Not For New Designs	Standard	600V	4A	1.15V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
B0540W RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 500MA SOD123	Active	Schottky	40V	500mA	510mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 40V	170pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
SS1H6LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SOD123W	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500nA @ 60V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S10JC V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A DO214AB	Active	Standard	600V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS2K R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	Active	Standard	800V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2M R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 2A DO214AA	Active	Standard	1000V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS1H20LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 1A SOD123HE	Active	Schottky	200V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 200V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SR506 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO201AD	Active	Schottky	60V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR520 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 5A DO201AD	Active	Schottky	200V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ES3DBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	Active	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	100µA @ 200V	46pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS36 R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO214AB	Not For New Designs	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK56C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO214AB	Not For New Designs	Schottky	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK54C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 40V DO-214AB	Active	Schottky	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5M V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 5A DO214AB	Active	Standard	1000V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK59C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 90V DO-214AB	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TPMR10J S1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A TO277A	Active	Standard	600V	10A	1.8V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	10µA @ 600V	140pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
TSP10U60S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 10A TO277A	Active	Schottky	60V	10A	540mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 60V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
TSP10U45S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 10A TO277A	Active	Schottky	45V	10A	460mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
TSP20U60S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 20A TO277A	Active	Schottky	60V	20A	580mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
TSP10U100S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A TO277A	Active	Schottky	100V	10A	680mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 100V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
BAT54S RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOT23	Active	Schottky	30V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 125°C
SS34LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SOD123W	Active	Schottky	40V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 125°C
TST40L200CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 20A TO220AB	Active	Schottky	200V	20A	880mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
RS1GL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 800MA SUBSMA	Active	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1GLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1KL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 800MA SUBSMA	Active	Standard	800V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1ML RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SUB SMA	Active	Standard	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ESH1C R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AC	Active	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	1µA @ 150V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
ESH1DM RSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A MICRO SMA	Active	Standard	200V	1A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	3pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
ESDLW RVG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	200V	800mA	950mV @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	21pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESGLW RVG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESJLW RVG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	600V	800mA	1.7V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	19pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESDLWHRVG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	200V	800mA	950mV @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	21pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESGLWHRVG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ESJLWHRVG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	600V	800mA	1.7V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	19pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ES1J R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES15JLW RVG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	600V	1.5A	1.7V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ES15DLWHRVG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	200V	1.5A	950mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	24pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
SK36A R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO214AC	Active	Schottky	60V	3A	720mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S4D R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB	Not For New Designs	Standard	200V	4A	1.15V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3D V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8JCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A DO214AB	Active	Standard	600V	8A	985mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3G V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HERF1007GAHC0G	Taiwan Semiconductor Corporation	DIODE HIGH EFFICIENT	Active	Standard	800V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 800V	40pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
HERF1008GAHC0G	Taiwan Semiconductor Corporation	DIODE HIGH EFFICIENT	Active	Standard	1000V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 1000V	40pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single