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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220AC |
Active | Standard | 600V | 8A | 2.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO220AC |
Active | Schottky | 100V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 5A TO220FP |
Active | Standard | 1200V | 5A | 2.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 1200V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
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Power Integrations |
DIODE GEN PURP 600V 10A TO220AC |
Active | Standard | 600V | 10A | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 23ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 400V 8A TO220AC |
Active | Standard | 400V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO220FP |
Active | Standard | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE GEN PURP 600V 20A TO220NFM |
Not For New Designs | Standard | 600V | 20A | 2.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 100V 5A DPAK |
Active | Schottky | 100V | 5A | 730mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.5µA @ 100V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
Power Integrations |
DIODE GEN PURP 600V 5A TO220AC |
Active | Standard | 600V | 5A | 3.14V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 15µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 30A TO247-2 |
Active | Standard | 600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
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STMicroelectronics |
DIODE SILICON 650V 10A D2PAK |
Active | Silicon Carbide Schottky | 650V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 480pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |
|
IXYS |
DIODE GEN PURP 800V 30A TO220AC |
Active | Standard | 800V | 30A | 1.29V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 800V | 10pF @ 400V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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Littelfuse Inc. |
DIODE GEN PURP 400V 9.5A TO220 |
Active | Standard | 400V | 9.5A | 1.6V @ 9.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 400V | - | Through Hole | TO-220-3 Isolated Tab | TO-220 Isolated Tab | -40°C ~ 125°C |
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STMicroelectronics |
DIODE GEN PURP 1KV 8A TO220AB |
Active | Standard | 1000V | 8A | 2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 5µA @ 1000V | - | Through Hole | TO-220-3 | TO-220Ins | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 15A TO220AC |
Active | Standard | 600V | 15A | 1.55V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 15µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 15A TO220FP |
Active | Standard | 600V | 15A | 1.55V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 15µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
|
IXYS |
DIODE GEN PURP 2.2KV 30A TO263 |
Active | Standard | 2200V | 30A | 1.26V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 2200V | 7pF @ 700V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 1KV 12A TO220INS |
Active | Standard | 1000V | 12A | 2V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 10µA @ 1000V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
Active | Standard | 600V | 8A | 1.85V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 8µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 15A TO220AC |
Active | Standard | 200V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 36ns | 10µA @ 200V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 20A TO220AC |
Active | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 200V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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Littelfuse Inc. |
DIODE GEN PURP 800V 15.9A TO220 |
Active | Standard | 800V | 15.9A | - | Standard Recovery >500ns, > 200mA (Io) | 4µs | 20µA @ 800V | - | Through Hole | TO-220-3 Isolated Tab | TO-220AB-L | -40°C ~ 125°C |
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Infineon Technologies |
DIODE GEN PURP 650V 60A TO247-3 |
Active | Standard | 650V | 60A | 1.7V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 40µA @ 650V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 30A TO247 |
Active | Standard | 600V | 30A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 12A TO263AB |
Active | Silicon Carbide Schottky | 650V | 12A | 1.55V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
Active | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 5A TO220AC |
Active | Standard | 600V | 5A | 3.6V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 6µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 600V 30A TO247 |
Active | Standard | 600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
Power Integrations |
DIODE GEN PURP 600V 12A TO220AC |
Active | Standard | 600V | 12A | 3.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 11.6ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 400V 30A TO220AC |
Active | Standard | 400V | 30A | 1.45V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
Active | Standard | 600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
Active | Standard | 600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 12A DO203AA |
Active | Standard | 200V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 2mA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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ON Semiconductor |
DIODE GEN PURP 1.2KV 18A TO247 |
Active | Standard | 1200V | 18A | 3.3V @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 1A TO220AC |
Active | Silicon Carbide Schottky | 1200V | 1A | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 2µA @ 1200V | 69pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 12A DO203AA |
Active | Standard | 200V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 60A TO247 |
Active | Standard | 600V | 60A | 2.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1.2KV 30A TO247 |
Active | Standard | 1200V | 30A | 3.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 320ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 75A DO247 |
Active | Standard | 1200V | 75A | 3.2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 50µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1KV 30A DO247 |
Active | Standard | 1000V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 1000V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 12A DO203AA |
Active | Standard | 100V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5mA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
Active | Standard | 600V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1mA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 15A DOP3I |
Active | Standard | 1200V | 15A | 2.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 15µA @ 1200V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 175°C (Max) |
|
IXYS |
DIODE GP 600V 30A ISOPLUS247 |
Active | Standard | 600V | 30A | 2.51V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 250µA @ 600V | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO247AC |
Active | Standard | 1200V | 8A | 3.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 10µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A DO203AA |
Active | Standard | 600V | 25A | 1.3V @ 78A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
IXYS |
DIODE GP 1.2KV 30A ISOPLUS247 |
Active | Standard | 1200V | 30A | 2.74V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 250µA @ 1200V | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 60A DO247 |
Active | Standard | 600V | 60A | 1.85V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 50µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30A TO247AC |
Active | Schottky | 60V | 30A | 800mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 480µA @ 60V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 80A POWIRTAB |
Active | Standard | 400V | 80A | 1.3V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 400V | - | Through Hole | PowerTab™, PowIRtab™ | PowIRtab™ | - |