Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Diodes Incorporated DIODE SCHOTTKY 60V 5A DO201AD ActiveSchottky60V5A670mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleDO-201AD, AxialDO-201AD-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A TO277A ActiveStandard200V6A940mV @ 6AFast Recovery =< 500ns, > 200mA (Io)22ns2µA @ 200V
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Surface MountTO-277, 3-PowerDFNTO-277A (SMPC)-65°C ~ 175°C
Diodes Incorporated DIODE SCHOTTKY 90V 1A SMB ActiveSchottky90V1A790mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 90V80pF @ 4V, 1MHzSurface MountDO-214AA, SMBSMB-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 45V 20A SMPD ActiveSchottky45V20A (DC)640mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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2.5mA @ 45V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab) VariantSMPD-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 3A DO214AB ActiveStandard400V3A1.25V @ 3AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 400V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 6A P600 ActiveStandard50V6A900mV @ 6AStandard Recovery >500ns, > 200mA (Io)2.5µs5µA @ 50V150pF @ 4V, 1MHzThrough HoleP600, AxialP600-50°C ~ 150°C
Diodes Incorporated DIODE GEN PURP 400V 3A SMC ActiveStandard400V3A1.3V @ 3AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 400V50pF @ 4V, 1MHzSurface MountDO-214AB, SMCSMC-65°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 100V 5A 5DFN ActiveSchottky100V5A730mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 175°C
STMicroelectronics DIODE GEN PURP 600V 3A DO201AD ActiveStandard600V3A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)35ns3µA @ 600V
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Through HoleDO-201AD, AxialDO-201AD175°C (Max)
ON Semiconductor DIODE GEN PURP 50V 1A AXIAL ActiveStandard50V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns2µA @ 50V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
Micro Commercial Co DIODE SCHOTTKY 35V 10A DO214AB ActiveSchottky35V10A650mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 35V500pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (HSMC)-55°C ~ 125°C
Central Semiconductor Corp DIODE SCHOTTKY 40V 5A SOT223 ActiveSchottky40V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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3mA @ 40V
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Surface MountTO-261-4, TO-261AASOT-223-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE AVALANCHE 1KV 3A SOD64 ActiveAvalanche1000V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)7.5µs1µA @ 1000V60pF @ 4V, 1MHzThrough HoleSOD-64, AxialSOD-64-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 100V 2A AXIAL ActiveStandard100V2A940mV @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 100V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A P600 ActiveStandard200V6A900mV @ 6AStandard Recovery >500ns, > 200mA (Io)2.5µs5µA @ 200V150pF @ 4V, 1MHzThrough HoleP600, AxialP600-50°C ~ 150°C
Diodes Incorporated DIODE SBR 50V 20A POWERDI5060-8 ActiveSuper Barrier50V20A500mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V350pF @ 50V, 1MHzSurface Mount8-PowerTDFNPowerDI5060-8-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 2A AXIAL ActiveStandard600V2A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 600V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
STMicroelectronics DIODE GEN PURP 200V 8A DPAK ActiveStandard200V8A1.05V @ 8AFast Recovery =< 500ns, > 200mA (Io)30ns6µA @ 200V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-40°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 3.9A TO263AC ActiveStandard600V3.9A1.2V @ 20AStandard Recovery >500ns, > 200mA (Io)3µs25µA @ 600V150pF @ 4V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab) VariantTO-263AC (SMPD)-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 150V 1A AXIAL ActiveStandard150V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns2µA @ 150V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 45V 40A TO263AC ActiveSchottky45V40A660mV @ 40AFast Recovery =< 500ns, > 200mA (Io)
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5mA @ 45V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab) VariantTO-263AC (SMPD)-40°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 5A DPAK ActiveStandard600V5A2.7V @ 5AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 175°C
Rohm Semiconductor DIODE GEN PURP 200V 3A TO252 ActiveStandard200V3A980mV @ 3AFast Recovery =< 500ns, > 200mA (Io)25ns10µA @ 200V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252150°C (Max)
ON Semiconductor DIODE GEN PURP 800V 1A AXIAL ActiveStandard800V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)100ns10µA @ 800V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
STMicroelectronics DIODE SCHOTTKY 45V 7.5A D2PAK ActiveSchottky45V7.5A840mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 45V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK175°C (Max)
SMC Diode Solutions DIODE SCHOTTKY 100V TO220AC ActiveSchottky100V
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850mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 100V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
SMC Diode Solutions DIODE SCHOTTKY 60V TO220AC ActiveSchottky60V
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750mV @ 7.5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
SMC Diode Solutions DIODE SCHOTTKY 60V TO220AC ActiveSchottky60V
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750mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 60V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 800V 4A AXIAL ActiveStandard800V4A1.85V @ 4AFast Recovery =< 500ns, > 200mA (Io)100ns25µA @ 800V
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Through HoleDO-201AD, AxialAxial-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY AUTO 5A 100V ActiveSchottky100V5A710mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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3.5µA @ 100V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 5A DPAK ActiveStandard600V5A2.9V @ 5AFast Recovery =< 500ns, > 200mA (Io)21ns20µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-Pak-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 100V 8A TO220-2 ActiveStandard100V8A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 100V
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Through HoleTO-220-2TO-220-2-65°C ~ 175°C
STMicroelectronics DIODE GEN PURP 200V 8A TO220AC ActiveStandard200V8A1.05V @ 8AFast Recovery =< 500ns, > 200mA (Io)30ns6µA @ 200V
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Through HoleTO-220-2TO-220AC175°C (Max)
STMicroelectronics DIODE SCHOTTKY 45V 15A TO220AC ActiveSchottky45V15A840mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 45V
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Through HoleTO-220-2TO-220AC175°C (Max)
STMicroelectronics DIODE GEN PURP 600V 12A D2PAK ActiveStandard600V12A2.9V @ 12AFast Recovery =< 500ns, > 200mA (Io)45ns45µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK175°C (Max)
Rohm Semiconductor DIODE GEN PURP 430V 20A LPDS Not For New DesignsStandard430V20A
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Fast Recovery =< 500ns, > 200mA (Io)
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABLPDS150°C (Max)
ON Semiconductor DIODE GEN PURP 600V 4A TO220AC ActiveStandard600V4A2.4V @ 4AFast Recovery =< 500ns, > 200mA (Io)22ns100µA @ 600V
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Through HoleTO-220-2 Full PackTO-220F-2L-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 50V 7.5A TO220AC ActiveSchottky50V7.5A750mV @ 7.5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Through HoleTO-220-2TO-220AC-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 45V 20A TO263AB ActiveSchottky45V20A (DC)660mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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2mA @ 45V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB200°C (Max)
STMicroelectronics DIODE SCHOTTKY 45V 15A TO220FP ActiveSchottky45V15A840mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 45V
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Through HoleTO-220-2 Full PackTO-220FPAC175°C (Max)
STMicroelectronics DIODE SCHOTTKY 120V 20A TO220FP ActiveSchottky120V20A890mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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210µA @ 120V
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Through HoleTO-220-3 Full PackTO-220FPAB150°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 15A DPAK ActiveStandard600V15A3.2V @ 15AFast Recovery =< 500ns, > 200mA (Io)22ns200µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-Pak-65°C ~ 175°C
STMicroelectronics DIODE SCHOTTKY 45V 10A TO220FPAC ActiveSchottky45V10A600mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 45V
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Through HoleTO-220-2 Full PackTO-220FPAC175°C (Max)
STMicroelectronics DIODE GEN PURP 300V 8A TO220AC ActiveStandard300V8A1.25V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns20µA @ 300V
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Through HoleTO-220-2TO-220AC175°C (Max)
Rohm Semiconductor DIODE GP 600V 10A TO220ACFP ActiveStandard600V10A1.3V @ 10AFast Recovery =< 500ns, > 200mA (Io)150ns10µA @ 600V
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Through HoleTO-220-2TO-220ACFP150°C (Max)
Cree/Wolfspeed DIODE SCHOTTKY 650V 3A TO252-2 ActiveSilicon Carbide Schottky650V11A (DC)1.8V @ 3ANo Recovery Time > 500mA (Io)0ns50µA @ 650V155pF @ 0V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-2-55°C ~ 175°C
STMicroelectronics DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A3.4V @ 8AFast Recovery =< 500ns, > 200mA (Io)18ns20µA @ 600V
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Through HoleTO-220-2TO-220AC175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 15A D2PAK ActiveStandard600V15A2.45V @ 15AFast Recovery =< 500ns, > 200mA (Io)29ns15µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-65°C ~ 175°C
Power Integrations DIODE GEN PURP 600V 3A TO220AC ActiveStandard600V3A3V @ 3AFast Recovery =< 500ns, > 200mA (Io)9.8ns250µA @ 600V11pF @ 10V, 1MHzThrough HoleTO-220-2TO-220AC150°C (Max)
Infineon Technologies DIODE GEN PURP 650V 15A TO220 ActiveStandard650V15A2.3V @ 15AFast Recovery =< 500ns, > 200mA (Io)47ns40µA @ 650V
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Through HoleTO-220-2TO-220-40°C ~ 175°C