Diodes - Rectifiers - Single - Discrete Semiconductor Products - 1N3879 1N3889R VS-16FR60 1N3892R - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N3879	GeneSiC Semiconductor	DIODE GEN PURP 50V 6A DO4	Active	Standard	50V	6A	1.4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	15µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
1N3889R	GeneSiC Semiconductor	DIODE GEN PURP REV 50V 12A DO4	Active	Standard, Reverse Polarity	50V	12A	1.4V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
VS-16FR60	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 16A DO203AA	Active	Standard, Reverse Polarity	600V	16A	1.23V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
1N3892R	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 12A DO4	Active	Standard, Reverse Polarity	400V	12A	1.4V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
1N3892	GeneSiC Semiconductor	DIODE GEN PURP 400V 12A DO4	Active	Standard	400V	12A	1.4V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
VS-40HF20	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 40A DO203AB	Active	Standard	200V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 190°C
VS-20ETF12-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 20A TO220AC	Active	Standard	1200V	20A	1.31V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
VS-65PQ015-N3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15V 65A TO247AC	Active	Schottky	15V	65A	500mV @ 65A	Fast Recovery =< 500ns, > 200mA (Io)	-	18mA @ 15V	-	Through Hole	TO-247-3	TO-247AC	-55°C ~ 125°C
DUR60120W	Littelfuse Inc.	DIODE GEN PURP 1.2KV 60A TO247AC	Active	Standard	1200V	60A	3.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	650µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC	-55°C ~ 150°C
VS-20ETF06FP-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 20A TO220FP	Active	Standard	600V	20A	1.67V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220-2 Full Pack	-40°C ~ 150°C
LFUSCD10065A	Littelfuse Inc.	DIODE SIC SCHOTKY 650V 10A TO220	Active	Silicon Carbide Schottky	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	250µA @ 650V	290pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
SCS108AGC	Rohm Semiconductor	DIODE SCHOTTKY 600V 8A TO220AC	Not For New Designs	Silicon Carbide Schottky	600V	8A	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	160µA @ 600V	345pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
1N3611	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
VS-STPS40L15CW-N3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15V 40A TO247AC	Active	Schottky	15V	40A	520mV @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 15V	2000pF @ 5V, 1MHz	Through Hole	TO-247-3	TO-247AC	-55°C ~ 125°C
SCS215AMC	Rohm Semiconductor	DIODE SCHOTTKY 650V 12A TO220FM	Active	Silicon Carbide Schottky	650V	12A	1.55V @ 12A	No Recovery Time > 500mA (Io)	0ns	240µA @ 600V	438pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220FM	175°C (Max)
DUR75120W	Littelfuse Inc.	DIODE GEN PURP 1.2KV 75A TO247AC	Active	Standard	1200V	75A	3.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	650µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC	-55°C ~ 150°C
LFUSCD05120A	Littelfuse Inc.	DIODE SC SCHOTTKY 1200V 5A TO220	Active	Silicon Carbide Schottky	1200V	5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	190µA @ 1200V	260pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
SCS110AGC	Rohm Semiconductor	DIODE SCHOTTKY 600V 10A TO220AC	Not For New Designs	Silicon Carbide Schottky	600V	10A	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	430pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
1N3883	GeneSiC Semiconductor	DIODE GEN PURP 400V 6A DO4	Active	Standard	400V	6A	1.4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	15µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
1N3883R	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 6A DO4	Active	Standard, Reverse Polarity	400V	6A	1.4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	15µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
VS-30APF06-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AC	Active	Standard	600V	30A	1.41V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 600V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
VS-30APF10-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 30A TO247	Active	Standard	1000V	30A	1.41V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	450ns	100µA @ 1000V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
VS-30APF12-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 30A TO247AC	Active	Standard	1200V	30A	1.41V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	450ns	100µA @ 1200V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
JANTXV1N4148-1	M/A-Com Technology Solutions	DIODE GEN PURP 75V 200MA DO35	Active	Standard	75V	200mA (DC)	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 75V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
VS-60EPF06PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AC	Active	Standard	600V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
1N5616US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
VS-40EPS16-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 40A TO247AC	Active	Standard	1600V	40A	1.14V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1600V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
1N2138AR	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 60A DO5	Active	Standard, Reverse Polarity	600V	60A	1.1V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
1N6643US	Microsemi Corporation	DIODE GEN PURP 50V 300MA D5B	Active	Standard	50V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	50nA @ 50V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
FR40MR05	GeneSiC Semiconductor	DIODE GEN PURP REV 1KV 40A DO5	Active	Standard, Reverse Polarity	1000V	40A	1V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
1N3768R	GeneSiC Semiconductor	DIODE GEN PURP REV 1KV 35A DO5	Active	Standard, Reverse Polarity	1000V	35A	1.2V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 190°C
LFUSCD16065B	Littelfuse Inc.	DIODE SIC SCHOTKY 650V 16A TO247	Active	Silicon Carbide Schottky	650V	16A (DC)	1.7V @ 16A	No Recovery Time > 500mA (Io)	0ns	460µA @ 650V	520pF @ 1V, 1MHz	Through Hole	TO-247-3	TO-247AD	175°C (Max)
VS-60EPS08-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 60A TO247AC	Active	Standard	800V	60A	1.09V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 800V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
JANTX1N6638	M/A-Com Technology Solutions	DIODE GEN PURP 125V 300MA	Active	Standard	125V	300mA (DC)	1.1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5ns	100µA @ 125V	-	Through Hole	D, Axial	-	-65°C ~ 175°C
LFUSCD20065B	Littelfuse Inc.	DIODE SIC SCHOTKY 650V 20A TO247	Active	Silicon Carbide Schottky	650V	20A (DC)	1.7V @ 20A	No Recovery Time > 500mA (Io)	0ns	500µA @ 650V	580pF @ 1V, 1MHz	Through Hole	TO-247-3	TO-247AD	175°C (Max)
FR85G02	GeneSiC Semiconductor	DIODE GEN PURP 400V 85A DO5	Active	Standard	400V	85A	1.4V @ 85A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
SCS112AGC	Rohm Semiconductor	DIODE SCHOTTKY 600V 12A TO220AC	Not For New Designs	Silicon Carbide Schottky	600V	12A	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	240µA @ 600V	516pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
LFUSCD10120A	Littelfuse Inc.	DIODE SC SCHOTKY 1200V 10A TO220	Active	Silicon Carbide Schottky	1200V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	250µA @ 1200V	500pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
VS-60EPF12-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 60A TO247AC	Active	Standard	1200V	60A	1.4V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	480ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
VS-60EPF04-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 60A TO247AC	Active	Standard	400V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 400V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
1N5416US	Microsemi Corporation	DIODE GEN PURP 100V 3A D5B	Active	Standard	100V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
VS-60APF04-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 60A TO247AC	Active	Standard	400V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 400V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
SCS215KGC	Rohm Semiconductor	DIODE SCHOTTKY 1.2KV 15A TO220AC	Active	Silicon Carbide Schottky	1200V	15A (DC)	1.6V @ 15A	No Recovery Time > 500mA (Io)	0ns	300µA @ 1200V	790pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
JANTXV1N6638	M/A-Com Technology Solutions	DIODE GEN PURP 125V 300MA D-PAK	Active	Standard	125V	300mA (DC)	1.1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5ns	100µA @ 125V	-	Through Hole	D, Axial	D-Pak	-65°C ~ 175°C
MBR3560R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 60V DO4	Active	Schottky, Reverse Polarity	60V	35A	750mV @ 35A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 20V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
VS-85HFL60S05	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 85A DO203AB	Active	Standard	600V	85A	1.75V @ 266.9A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	100µA @ 600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
LFUSCD15120A	Littelfuse Inc.	DIODE SC SCHOTKY 1200V 15A TO220	Active	Silicon Carbide Schottky	1200V	15A (DC)	1.7V @ 15A	No Recovery Time > 500mA (Io)	0ns	375µA @ 1200V	750pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
JANTXV1N6640US	M/A-Com Technology Solutions	DIODE GEN PURP 50V 300MA D-5D	Active	Standard	50V	300mA (DC)	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	90µA @ 50V	-	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
JANTXV1N6640	M/A-Com Technology Solutions	DIODE GEN PURP 50V 300MA D-5D	Active	Standard	50V	300mA (DC)	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	90µA @ 50V	-	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
GB02SHT03-46	GeneSiC Semiconductor	DIODE SCHOTTKY 300V 4A	Active	Silicon Carbide Schottky	300V	4A (DC)	1.6V @ 1A	No Recovery Time > 500mA (Io)	0ns	5µA @ 300V	76pF @ 1V, 1MHz	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46	-55°C ~ 225°C

Manufacturers for Diodes - Rectifiers - Single