Diodi - Raddrizzatori - Singoli - Dispositivi a semiconduttore discreti - RHRP860-F085 MBR10100-E3/4W STTH512FP LXA10T600 - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
RHRP860-F085	ON Semiconductor	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	2.1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	100µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
MBR10100-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO220AC	Active	Schottky	100V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
STTH512FP	STMicroelectronics	DIODE GEN PURP 1.2KV 5A TO220FP	Active	Standard	1200V	5A	2.2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	95ns	5µA @ 1200V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FPAC	175°C (Max)
LXA10T600	Power Integrations	DIODE GEN PURP 600V 10A TO220AC	Active	Standard	600V	10A	3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	23ns	250µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
STTH8R04DI	STMicroelectronics	DIODE GEN PURP 400V 8A TO220AC	Active	Standard	400V	8A	1.5V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	-40°C ~ 175°C
VS-ETH3006FP-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO220FP	Active	Standard	600V	30A	2.65V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	30µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220-2 Full Pack	-65°C ~ 175°C
RFUS20TF6S	Rohm Semiconductor	DIODE GEN PURP 600V 20A TO220NFM	Not For New Designs	Standard	600V	20A	2.8V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220NFM	150°C (Max)
STPS5H100B	STMicroelectronics	DIODE SCHOTTKY 100V 5A DPAK	Active	Schottky	100V	5A	730mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3.5µA @ 100V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
LQA05TC600	Power Integrations	DIODE GEN PURP 600V 5A TO220AC	Active	Standard	600V	5A	3.14V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	15µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
STTH30ACS06W	STMicroelectronics	DIODE GEN PURP 600V 30A TO247-2	Active	Standard	600V	30A	2.4V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	5µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
STPSC10H065G-TR	STMicroelectronics	DIODE SILICON 650V 10A D2PAK	Active	Silicon Carbide Schottky	650V	10A	1.75V @ 10A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	480pF @ 0V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK	-40°C ~ 175°C
DSI30-08A	IXYS	DIODE GEN PURP 800V 30A TO220AC	Active	Standard	800V	30A	1.29V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 800V	10pF @ 400V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
D4015LTP	Littelfuse Inc.	DIODE GEN PURP 400V 9.5A TO220	Active	Standard	400V	9.5A	1.6V @ 9.5A	Standard Recovery >500ns, > 200mA (Io)	4µs	10µA @ 400V	-	Through Hole	TO-220-3 Isolated Tab	TO-220 Isolated Tab	-40°C ~ 125°C
STTH810DI	STMicroelectronics	DIODE GEN PURP 1KV 8A TO220AB	Active	Standard	1000V	8A	2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	5µA @ 1000V	-	Through Hole	TO-220-3	TO-220Ins	175°C (Max)
STTH15L06D	STMicroelectronics	DIODE GEN PURP 600V 15A TO220AC	Active	Standard	600V	15A	1.55V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	15µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
STTH15L06FP	STMicroelectronics	DIODE GEN PURP 600V 15A TO220FP	Active	Standard	600V	15A	1.55V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	15µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FPAC	175°C (Max)
DNA30E2200PZ	IXYS	DIODE GEN PURP 2.2KV 30A TO263	Active	Standard	2200V	30A	1.26V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 2200V	7pF @ 700V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 150°C
STTH1210DI	STMicroelectronics	DIODE GEN PURP 1KV 12A TO220INS	Active	Standard	1000V	12A	2V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	10µA @ 1000V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	175°C (Max)
STTH806DIRG	STMicroelectronics	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	1.85V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	8µA @ 600V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	175°C (Max)
STTH1502DI	STMicroelectronics	DIODE GEN PURP 200V 15A TO220AC	Active	Standard	200V	15A	1.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	36ns	10µA @ 200V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	175°C (Max)
STTH2002DI	STMicroelectronics	DIODE GEN PURP 200V 20A TO220AC	Active	Standard	200V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	10µA @ 200V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	175°C (Max)
D8025LTP	Littelfuse Inc.	DIODE GEN PURP 800V 15.9A TO220	Active	Standard	800V	15.9A	-	Standard Recovery >500ns, > 200mA (Io)	4µs	20µA @ 800V	-	Through Hole	TO-220-3 Isolated Tab	TO-220AB-L	-40°C ~ 125°C
IDW30E65D1FKSA1	Infineon Technologies	DIODE GEN PURP 650V 60A TO247-3	Active	Standard	650V	60A	1.7V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	115ns	40µA @ 650V	-	Through Hole	TO-247-3	TO-247-3	-40°C ~ 175°C
RHRG3060	ON Semiconductor	DIODE GEN PURP 600V 30A TO247	Active	Standard	600V	30A	2.1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 175°C
SCS212AJTLL	Rohm Semiconductor	DIODE SCHOTTKY 650V 12A TO263AB	Active	Silicon Carbide Schottky	650V	12A	1.55V @ 12A	No Recovery Time > 500mA (Io)	0ns	240µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	175°C (Max)
STTH30L06WY	STMicroelectronics	DIODE GEN PURP 600V 30A DO247	Active	Standard	600V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	25µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
STTH506DTI	STMicroelectronics	DIODE GEN PURP 600V 5A TO220AC	Active	Standard	600V	5A	3.6V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	6µA @ 600V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	175°C (Max)
APT30DQ60BG	Microsemi Corporation	DIODE GEN PURP 600V 30A TO247	Active	Standard	600V	30A	2.4V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	25µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
QH12TZ600	Power Integrations	DIODE GEN PURP 600V 12A TO220AC	Active	Standard	600V	12A	3.1V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	11.6ns	250µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
STTH30R04D	STMicroelectronics	DIODE GEN PURP 400V 30A TO220AC	Active	Standard	400V	30A	1.45V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	15µA @ 400V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
STTH3006W	STMicroelectronics	DIODE GEN PURP 600V 30A DO247	Active	Standard	600V	30A	1.85V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	25µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
STTH30R06W	STMicroelectronics	DIODE GEN PURP 600V 30A DO247	Active	Standard	600V	30A	1.85V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	25µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
VS-1N1202RA	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 12A DO203AA	Active	Standard	200V	12A	1.35V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	2mA @ 200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 200°C
ISL9R18120G2	ON Semiconductor	DIODE GEN PURP 1.2KV 18A TO247	Active	Standard	1200V	18A	3.3V @ 18A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247-2	-55°C ~ 150°C
GB01SLT12-220	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 1A TO220AC	Active	Silicon Carbide Schottky	1200V	1A	1.8V @ 1A	No Recovery Time > 500mA (Io)	0ns	2µA @ 1200V	69pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
VS-12F20	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 12A DO203AA	Active	Standard	200V	12A	1.26V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
APT60DQ60BG	Microsemi Corporation	DIODE GEN PURP 600V 60A TO247	Active	Standard	600V	60A	2.4V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	25µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT30DQ120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 30A TO247	Active	Standard	1200V	30A	3.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	320ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
STTH75S12W	STMicroelectronics	DIODE GEN PURP 1.2KV 75A DO247	Active	Standard	1200V	75A	3.2V @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	50µA @ 1200V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
STTH3010W	STMicroelectronics	DIODE GEN PURP 1KV 30A DO247	Active	Standard	1000V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	15µA @ 1000V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
VS-1N1200A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 12A DO203AA	Active	Standard	100V	12A	1.35V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	2.5mA @ 100V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 200°C
VS-1N1206RA	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 12A DO203AA	Active	Standard	600V	12A	1.35V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1mA @ 600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 200°C
STTH1512PI	STMicroelectronics	DIODE GEN PURP 1.2KV 15A DOP3I	Active	Standard	1200V	15A	2.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	105ns	15µA @ 1200V	-	Through Hole	DOP3I-2 Insulated (Straight Leads)	DOP3I	175°C (Max)
DSEP30-06BR	IXYS	DIODE GP 600V 30A ISOPLUS247	Active	Standard	600V	30A	2.51V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	250µA @ 600V	-	Through Hole	ISOPLUS247™	ISOPLUS247™	-55°C ~ 175°C
VS-HFA08PB120PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 8A TO247AC	Active	Standard	1200V	8A	3.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	95ns	10µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 150°C
VS-25F60	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 25A DO203AA	Active	Standard	600V	25A	1.3V @ 78A	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
DSEP30-12AR	IXYS	DIODE GP 1.2KV 30A ISOPLUS247	Active	Standard	1200V	30A	2.74V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	250µA @ 1200V	-	Through Hole	ISOPLUS247™	ISOPLUS247™	-55°C ~ 175°C
STTH6006W	STMicroelectronics	DIODE GEN PURP 600V 60A DO247	Active	Standard	600V	60A	1.85V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	50µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
VS-STPS30L60CW-N3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 30A TO247AC	Active	Schottky	60V	30A	800mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	480µA @ 60V	-	Through Hole	TO-247-3	TO-247AC	-55°C ~ 150°C
VS-80EBU04	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 80A POWIRTAB	Active	Standard	400V	80A	1.3V @ 80A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 400V	-	Through Hole	PowerTab™, PowIRtab™	PowIRtab™	-

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