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STMicroelectronics |
DIODE SCHOTTKY 45V 10A TO220AC |
Active | Schottky | 45V | 10A | 600mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 15V 20A D2PAK |
Active | Schottky | 15V | 20A | 410mV @ 19A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 15V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 125°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 8A TO220AC |
Active | Standard | 1200V | 8A | 2.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 5µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 800V 8A TO220AC |
Active | Standard | 800V | 8A | 1.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 800V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 12A TO252 |
Active | Standard | 600V | 12A | 2.5V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 10A TO220FP |
Active | Standard | 600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FPAC | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220-2 |
Active | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 60V 20A TO220AC |
Active | Schottky | 60V | 20A | 630mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 85µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
ON Semiconductor |
DIODE SCHOTTKY 15V 25A D2PAK |
Active | Schottky | 15V | 25A | 450mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15mA @ 15V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 100°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 20A D2PAK |
Active | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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Power Integrations |
DIODE GEN PURP 300V 6A TO220AC |
Active | Standard | 300V | 6A | 1.9V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 11.5ns | 25µA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
WeEn Semiconductors |
DIODE GEN PURP 500V 14A TO220AC |
Active | Standard | 500V | 14A | 1.38V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 500V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 120V 20A TO220AB |
Active | Schottky | 120V | 20A | 930mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 120V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
ON Semiconductor |
DIODE GEN PURP 600V 15A TO220AC |
Active | Standard | 600V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 15A TO220AC |
Active | Standard | 1200V | 15A | 3.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 3A TO220-F2 |
Active | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 155pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220-F2 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 60V 10A TO220AC |
Active | Schottky | 60V | 10A | 600mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 60V 20A D2PAK |
Active | Schottky | 60V | 20A | 565mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 125µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3.5A DPAK |
Active | Schottky | 60V | 3.5A | 610mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 60V | 145pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 3.5A DPAK |
Active | Schottky | 100V | 3.5A | 810mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | 92pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
IXYS |
DIODE SCHOTTKY 100V 16A TO220AC |
Active | Schottky | 100V | 16A | 790mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
ON Semiconductor |
DIODE GEN PURP 600V 15A TO220AC |
Active | Standard | 600V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 200V 15A TO220FP |
Active | Standard | 200V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 36ns | 10µA @ 200V | - | Through Hole | TO-220-2 Full Pack | TO-220FPAC | 175°C (Max) |
|
Power Integrations |
DIODE GEN PURP 600V 8A TO220AC |
Active | Standard | 600V | 8A | 2.94V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 34ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A TO252AA |
Active | Standard | 600V | 4A | 1.8V @ 4A | - | - | 3µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
Active | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO220FP |
Active | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5.5A TO252AA |
Active | Schottky | 40V | 5.5A | 510mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 40V | 405pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A D2PAK |
Active | Standard | 600V | 30A | 2V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1KV 8A TO220AC |
Active | Standard | 1000V | 8A | 2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 5µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 8A TO220AC |
Active | Standard | 1200V | 8A | 2.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 8µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 4A TO252-2 |
Active | Silicon Carbide Schottky | 650V | 13.5A (DC) | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 251pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
ON Semiconductor |
DIODE GEN PURP 400V 20A TO220F |
Active | Standard | 400V | 20A | 1.4V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 400V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220FP |
Active | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FPAC | 175°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO220-2-1 |
Active | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 650V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A D2PAK |
Active | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 400V 20A TO220FP |
Active | Standard | 400V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 20µA @ 400V | - | Through Hole | TO-220-2 Full Pack | TO-220FPAC | 175°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 225V 400MA DO35 |
Active | Standard | 225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
IXYS |
DIODE GEN PURP 2.2KV 30A TO263 |
Active | Standard | 2200V | 30A | 1.26V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 2200V | 7pF @ 700V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 2A TO220AC |
Active | Silicon Carbide Schottky | 1200V | 2A | 1.5V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 12µA @ 1200V | 190pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
Power Integrations |
DIODE GEN PURP 600V 8A TO220AC |
Active | Standard | 600V | 8A | 3.15V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 11.1ns | 250µA @ 600V | 25pF @ 10V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
Power Integrations |
DIODE GEN PURP 300V 30A TO220AC |
Active | Standard | 300V | 30A | 1.95V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 13.7ns | 250µA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
ON Semiconductor |
DIODE GEN PURP 600V 30A TO220AC |
Active | Standard | 600V | 30A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
STMicroelectronics |
DIODE SCHOTTKY 600V 6A TO220AC |
Active | Silicon Carbide Schottky | 600V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 75µA @ 600V | 375pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A TO252AA |
Active | Standard | 800V | 8A | 1.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 800V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
|
ON Semiconductor |
DIODE GEN PURP 600V 30A TO247 |
Active | Standard | 600V | 30A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
|
ON Semiconductor |
DIODE GEN PURP 600V 60A TO247 |
Active | Standard | 600V | 60A | 1.7V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 150°C |
|
ON Semiconductor |
DIODE GEN PURP 600V 30A TO247 |
Active | Standard | 600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
Microsemi Corporation |
DIODE GEN PURP 600V 40A TO247 |
Active | Standard | 600V | 40A | 2.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 2A TO220-2 |
Active | Silicon Carbide Schottky | 1200V | 2A (DC) | 1.65V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 18µA @ 1200V | 182pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | 175°C (Max) |