Numero di parte Produttore / Marca Breve descrizione Stato parteTipo diodoTensione - DC Reverse (Vr) (Max)Corrente - Rettificato medio (Io)Voltage - Forward (Vf) (Max) @ IfVelocitàTempo di recupero inverso (trr)Corrente - Perdita inversa @ VrCapacità @ Vr, FTipo di montaggioPacchetto / casoPacchetto dispositivo fornitoreTemperatura operativa - Giunzione
STMicroelectronics DIODE SCHOTTKY 45V 10A TO220AC ActiveSchottky45V10A600mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 45V
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Through HoleTO-220-2TO-220AC175°C (Max)
STMicroelectronics DIODE SCHOTTKY 15V 20A D2PAK ActiveSchottky15V20A410mV @ 19AFast Recovery =< 500ns, > 200mA (Io)
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6mA @ 15V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK125°C (Max)
STMicroelectronics DIODE GEN PURP 1.2KV 8A TO220AC ActiveStandard1200V8A2.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)45ns5µA @ 1200V
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Through HoleTO-220-2TO-220AC175°C (Max)
ON Semiconductor DIODE GEN PURP 800V 8A TO220AC ActiveStandard800V8A1.8V @ 8AFast Recovery =< 500ns, > 200mA (Io)100ns25µA @ 800V
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Through HoleTO-220-2TO-220AC-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 12A TO252 ActiveStandard600V12A2.5V @ 12AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252, (D-Pak)-65°C ~ 175°C
STMicroelectronics DIODE GEN PURP 600V 10A TO220FP ActiveStandard600V10A2V @ 10AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 600V
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Through HoleTO-220-2 Full PackTO-220FPAC175°C (Max)
ON Semiconductor DIODE GEN PURP 600V 8A TO220-2 ActiveStandard600V8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)120ns10µA @ 600V
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Through HoleTO-220-2TO-220-2-65°C ~ 150°C
STMicroelectronics DIODE SCHOTTKY 60V 20A TO220AC ActiveSchottky60V20A630mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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85µA @ 60V
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Through HoleTO-220-2TO-220AC150°C (Max)
ON Semiconductor DIODE SCHOTTKY 15V 25A D2PAK ActiveSchottky15V25A450mV @ 25AFast Recovery =< 500ns, > 200mA (Io)
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15mA @ 15V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK100°C (Max)
STMicroelectronics DIODE GEN PURP 200V 20A D2PAK ActiveStandard200V20A1.1V @ 20AFast Recovery =< 500ns, > 200mA (Io)40ns10µA @ 200V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK175°C (Max)
Power Integrations DIODE GEN PURP 300V 6A TO220AC ActiveStandard300V6A1.9V @ 6AFast Recovery =< 500ns, > 200mA (Io)11.5ns25µA @ 300V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 14A TO220AC ActiveStandard500V14A1.38V @ 30AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 500V
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Through HoleTO-220-2TO-220AC150°C (Max)
STMicroelectronics DIODE SCHOTTKY 120V 20A TO220AB ActiveSchottky120V20A930mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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20µA @ 120V
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Through HoleTO-220-2TO-220AC175°C (Max)
ON Semiconductor DIODE GEN PURP 600V 15A TO220AC ActiveStandard600V15A1.5V @ 15AFast Recovery =< 500ns, > 200mA (Io)60ns10µA @ 600V
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Through HoleTO-220-2TO-220AC-65°C ~ 175°C
STMicroelectronics DIODE GEN PURP 1.2KV 15A TO220AC ActiveStandard1200V15A3.1V @ 15AFast Recovery =< 500ns, > 200mA (Io)40ns10µA @ 1200V
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Through HoleTO-220-2TO-220AC175°C (Max)
Cree/Wolfspeed DIODE SCHOTTKY 600V 3A TO220-F2 ActiveSilicon Carbide Schottky600V5A (DC)1.7V @ 3ANo Recovery Time > 500mA (Io)0ns50µA @ 600V155pF @ 0V, 1MHzThrough HoleTO-220-2 Full Pack, Isolated TabTO-220-F2-55°C ~ 175°C
STMicroelectronics DIODE SCHOTTKY 60V 10A TO220AC ActiveSchottky60V10A600mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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350µA @ 60V
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Through HoleTO-220-2TO-220AC150°C (Max)
STMicroelectronics DIODE SCHOTTKY 60V 20A D2PAK ActiveSchottky60V20A565mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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125µA @ 60V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK150°C (Max)
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 60V 3.5A DPAK ActiveSchottky60V3.5A610mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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2mA @ 60V145pF @ 5V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-PAK (TO-252AA)-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 100V 3.5A DPAK ActiveSchottky100V3.5A810mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 100V92pF @ 5V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-PAK (TO-252AA)-40°C ~ 150°C
IXYS DIODE SCHOTTKY 100V 16A TO220AC ActiveSchottky100V16A790mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 100V
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Through HoleTO-220-2TO-220AC-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 15A TO220AC ActiveStandard600V15A1.5V @ 15AFast Recovery =< 500ns, > 200mA (Io)60ns100µA @ 600V
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Through HoleTO-220-2TO-220AC-55°C ~ 175°C
STMicroelectronics DIODE GEN PURP 200V 15A TO220FP ActiveStandard200V15A1.1V @ 15AFast Recovery =< 500ns, > 200mA (Io)36ns10µA @ 200V
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Through HoleTO-220-2 Full PackTO-220FPAC175°C (Max)
Power Integrations DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A2.94V @ 8AFast Recovery =< 500ns, > 200mA (Io)34ns250µA @ 600V
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Through HoleTO-220-2TO-220AC150°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 4A TO252AA ActiveStandard600V4A1.8V @ 4A
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3µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-PAK (TO-252AA)-55°C ~ 150°C
STMicroelectronics DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A2.9V @ 8AFast Recovery =< 500ns, > 200mA (Io)45ns30µA @ 600V
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Through HoleTO-220-2 Insulated, TO-220ACTO-220AC ins175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 30A TO220FP ActiveStandard600V30A2V @ 30AFast Recovery =< 500ns, > 200mA (Io)45ns30µA @ 600V
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Through HoleTO-220-2 Full PackTO-220-2 Full Pack-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 40V 5.5A TO252AA ActiveSchottky40V5.5A510mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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3mA @ 40V405pF @ 5V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-PAK (TO-252AA)-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 30A D2PAK ActiveStandard600V30A2V @ 70AFast Recovery =< 500ns, > 200mA (Io)45ns30µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-65°C ~ 175°C
STMicroelectronics DIODE GEN PURP 1KV 8A TO220AC ActiveStandard1000V8A2V @ 8AFast Recovery =< 500ns, > 200mA (Io)85ns5µA @ 1000V
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Through HoleTO-220-2TO-220AC175°C (Max)
STMicroelectronics DIODE GEN PURP 1.2KV 8A TO220AC ActiveStandard1200V8A2.2V @ 8AFast Recovery =< 500ns, > 200mA (Io)100ns8µA @ 1200V
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Through HoleTO-220-2TO-220AC175°C (Max)
Cree/Wolfspeed DIODE SCHOTTKY 650V 4A TO252-2 ActiveSilicon Carbide Schottky650V13.5A (DC)1.8V @ 4ANo Recovery Time > 500mA (Io)0ns60µA @ 650V251pF @ 0V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-2-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 400V 20A TO220F ActiveStandard400V20A1.4V @ 20AFast Recovery =< 500ns, > 200mA (Io)50ns50µA @ 400V
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Through HoleTO-220-2 Full PackTO-220F-2L-55°C ~ 150°C
STMicroelectronics DIODE GEN PURP 600V 8A TO220FP ActiveStandard600V8A2.9V @ 8AFast Recovery =< 500ns, > 200mA (Io)45ns30µA @ 600V
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Through HoleTO-220-2 Full PackTO-220FPAC175°C (Max)
Infineon Technologies DIODE SCHOTTKY 650V 4A TO220-2-1 ActiveSilicon Carbide Schottky650V4A (DC)1.7V @ 4ANo Recovery Time > 500mA (Io)0ns70µA @ 650V130pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-1-55°C ~ 175°C
STMicroelectronics DIODE GEN PURP 600V 30A D2PAK ActiveStandard600V30A1.55V @ 30AFast Recovery =< 500ns, > 200mA (Io)90ns25µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK-40°C ~ 175°C
STMicroelectronics DIODE GEN PURP 400V 20A TO220FP ActiveStandard400V20A1.7V @ 20AFast Recovery =< 500ns, > 200mA (Io)45ns20µA @ 400V
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Through HoleTO-220-2 Full PackTO-220FPAC175°C (Max)
Microsemi Corporation DIODE GEN PURP 225V 400MA DO35 ActiveStandard225V400mA1V @ 400mAStandard Recovery >500ns, > 200mA (Io)
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50nA @ 225V
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Through HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
IXYS DIODE GEN PURP 2.2KV 30A TO263 ActiveStandard2200V30A1.26V @ 30AStandard Recovery >500ns, > 200mA (Io)
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40µA @ 2200V7pF @ 700V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263 (D2Pak)-55°C ~ 150°C
STMicroelectronics DIODE SCHOTTKY 1.2KV 2A TO220AC ActiveSilicon Carbide Schottky1200V2A1.5V @ 2ANo Recovery Time > 500mA (Io)0ns12µA @ 1200V190pF @ 0V, 1MHzThrough HoleTO-220-2TO-220AC-40°C ~ 175°C
Power Integrations DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A3.15V @ 8AFast Recovery =< 500ns, > 200mA (Io)11.1ns250µA @ 600V25pF @ 10V, 1MHzThrough HoleTO-220-2TO-220AC150°C (Max)
Power Integrations DIODE GEN PURP 300V 30A TO220AC ActiveStandard300V30A1.95V @ 30AFast Recovery =< 500ns, > 200mA (Io)13.7ns250µA @ 300V
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Through HoleTO-220-2TO-220AC150°C (Max)
ON Semiconductor DIODE GEN PURP 600V 30A TO220AC ActiveStandard600V30A1.5V @ 30AFast Recovery =< 500ns, > 200mA (Io)60ns250µA @ 600V
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Through HoleTO-220-2TO-220AC-55°C ~ 175°C
STMicroelectronics DIODE SCHOTTKY 600V 6A TO220AC ActiveSilicon Carbide Schottky600V6A1.7V @ 6ANo Recovery Time > 500mA (Io)0ns75µA @ 600V375pF @ 0V, 1MHzThrough HoleTO-220-2TO-220AC-40°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 8A TO252AA ActiveStandard800V8A1.1V @ 8AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 800V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-PAK (TO-252AA)-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 30A TO247 ActiveStandard600V30A1.5V @ 30AFast Recovery =< 500ns, > 200mA (Io)60ns250µA @ 600V
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Through HoleTO-247-2TO-247-2-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 60A TO247 ActiveStandard600V60A1.7V @ 60AFast Recovery =< 500ns, > 200mA (Io)80ns100µA @ 600V
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Through HoleTO-247-2TO-247-2-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 30A TO247 ActiveStandard600V30A2.4V @ 30AFast Recovery =< 500ns, > 200mA (Io)45ns100µA @ 600V
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Through HoleTO-247-2TO-247-2-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 600V 40A TO247 ActiveStandard600V40A2.4V @ 40AFast Recovery =< 500ns, > 200mA (Io)25ns25µA @ 600V
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Through HoleTO-247-2TO-247 [B]-55°C ~ 175°C
Infineon Technologies DIODE SCHOTTKY 1200V 2A TO220-2 ActiveSilicon Carbide Schottky1200V2A (DC)1.65V @ 2ANo Recovery Time > 500mA (Io)0ns18µA @ 1200V182pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-1175°C (Max)