Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Micro Commercial Co DIODE GEN PURP 1KV 6A DO201AD ActiveStandard1000V6A1V @ 6AStandard Recovery >500ns, > 200mA (Io)
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5µA @ 1000V150pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Micro Commercial Co DIODE GEN PURP 600V 6A DO201AD ActiveStandard600V6A1V @ 6AStandard Recovery >500ns, > 200mA (Io)
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5µA @ 600V150pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 100V 1A SMA ActiveSchottky100V1A760mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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40µA @ 100V
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Surface MountDO-214AC, SMASMA-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 200V 3A SMC ActiveSchottky200V3A840mV @ 3AFast Recovery =< 500ns, > 200mA (Io)35ns1mA @ 200V
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Surface MountDO-214AB, SMCSMC-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 45V 8A AXIAL ActiveSchottky45V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 45V
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Through HoleDO-201AA, DO-27, AxialAxial-65°C ~ 125°C
ON Semiconductor DIODE SCHOTTKY 45V 15A 5DFN ActiveSchottky45V15A570mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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120µA @ 45V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE AVALANCHE 200V 3A SOD64 ActiveAvalanche200V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)7.5µs1µA @ 200V60pF @ 4V, 1MHzThrough HoleSOD-64, AxialSOD-64-55°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 90V 3A DO214AB ActiveSchottky90V3A800mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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20µA @ 90V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-65°C ~ 175°C
Diodes Incorporated DIODE GEN PURP 100V 3A SMB ActiveStandard100V3A1.3V @ 3AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 100V50pF @ 4V, 1MHzSurface MountDO-214AA, SMBSMB-65°C ~ 150°C
Littelfuse Inc. DIODE SCHOTTKY 10A 100V TO-277B ActiveSchottky100V10A700mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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250µA @ 100V
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Surface MountTO-277, 3-PowerDFNTO-277B-55°C ~ 150°C
STMicroelectronics DIODE RECT 100V 20A DPAK ActiveFERD (Field Effect Rectifier Diode)100V20A705mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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140µA @ 100V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK175°C (Max)
Diodes Incorporated DIODE GEN PURP 50V 10A R6 ActiveStandard50V10A1V @ 10AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 50V150pF @ 4V, 1MHzThrough HoleR6, AxialR-6-65°C ~ 150°C
Diodes Incorporated DIODE SCHOTTKY 100V 3A POWERDI5 ActiveSchottky100V3A840mV @ 6AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Surface MountPowerDI™ 5PowerDI™ 5-65°C ~ 150°C
Diodes Incorporated DIODE SCHOTTKY 20V 5A SMC ActiveSchottky20V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V300pF @ 4V, 1MHzSurface MountDO-214AB, SMCSMC-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE AVALANCHE 600V 3A SOD64 ActiveAvalanche600V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)7.5µs1µA @ 600V60pF @ 4V, 1MHzThrough HoleSOD-64, AxialSOD-64-55°C ~ 175°C
Central Semiconductor Corp DIODE SCHOTTKY 100V 2A SMB ActiveSchottky100V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 100V120pF @ 4V, 1MHzSurface MountDO-214AA, SMBSMB-65°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 12A TO277A ActiveSchottky120V12A780mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 120V
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Surface MountTO-277, 3-PowerDFNTO-277A (SMPC)-55°C ~ 150°C
Central Semiconductor Corp DIODE GEN PURP 600V 5A SMC ActiveStandard600V5A1.7V @ 5AFast Recovery =< 500ns, > 200mA (Io)22ns1µA @ 600V17pF @ 4V, 1MHzSurface MountDO-214AB, SMCSMC-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 3A DO214AB ActiveStandard400V3A1.28V @ 4AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 400V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-65°C ~ 175°C
STMicroelectronics DIODE GEN PURP 200V 4A DPAK ActiveStandard200V4A1.05V @ 4AFast Recovery =< 500ns, > 200mA (Io)30ns3µA @ 200V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 6A P600 ActiveStandard100V6A900mV @ 6AStandard Recovery >500ns, > 200mA (Io)2.5µs5µA @ 100V150pF @ 4V, 1MHzThrough HoleP600, AxialP600-50°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 6A P600 ActiveStandard800V6A900mV @ 6AStandard Recovery >500ns, > 200mA (Io)2.5µs5µA @ 800V150pF @ 4V, 1MHzThrough HoleP600, AxialP600-50°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 6A P600 ActiveStandard400V6A900mV @ 6AStandard Recovery >500ns, > 200mA (Io)2.5µs5µA @ 400V150pF @ 4V, 1MHzThrough HoleP600, AxialP600-50°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 6A P600 ActiveStandard400V6A900mV @ 6AStandard Recovery >500ns, > 200mA (Io)2.5µs5µA @ 400V150pF @ 4V, 1MHzThrough HoleP600, AxialP600-50°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 6A P600 ActiveStandard600V6A900mV @ 6AStandard Recovery >500ns, > 200mA (Io)2.5µs5µA @ 600V150pF @ 4V, 1MHzThrough HoleP600, AxialP600-50°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 6A P600 ActiveStandard100V6A900mV @ 6AStandard Recovery >500ns, > 200mA (Io)2.5µs5µA @ 100V150pF @ 4V, 1MHzThrough HoleP600, AxialP600-50°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 6A P600 ActiveStandard600V6A900mV @ 6AStandard Recovery >500ns, > 200mA (Io)2.5µs5µA @ 600V150pF @ 4V, 1MHzThrough HoleP600, AxialP600-50°C ~ 150°C
Micro Commercial Co DIODE SCHOTTKY 45V 10A R6 ActiveSchottky45V10A550mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 45V
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Through HoleR6, AxialR-6-55°C ~ 150°C
Diodes Incorporated DIODE SBR 60V 20A POWERDI5 ActiveSuper Barrier60V20A570mV @ 20AStandard Recovery >500ns, > 200mA (Io)
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180µA @ 60V
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Surface MountPowerDI™ 5PowerDI®5-55°C ~ 150°C
Diodes Incorporated DIODE SBR 60V 8A POWERDI5 ActiveSuper Barrier60V8A620mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Surface MountPowerDI™ 5PowerDI™ 5-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 400V 3A DPAK ActiveStandard400V3A1.15V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 400V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 1KV 3A DO201AD ActiveStandard1000V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 1000V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 400V 3A DO201AD ActiveStandard400V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 400V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 50V 3A DO201AD ActiveStandard50V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 50V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 200V 2A AXIAL ActiveStandard200V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)35ns2µA @ 200V
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Through HoleDO-204AL, DO-41, AxialAxial-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 3A DO201AD ActiveStandard600V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 600V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 100V 3A AXIAL ActiveStandard100V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 100V
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Through HoleDO-201AA, DO-27, AxialAxial-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 200V 3A DO201AD ActiveStandard200V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 200V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 15A TO277A ActiveSchottky100V15A700mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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250µA @ 100V
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Surface MountTO-277, 3-PowerDFNTO-277A (SMPC)-55°C ~ 150°C
Diodes Incorporated DIODE GEN PURP 400V 10A R6 ActiveStandard400V10A1V @ 10AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 400V150pF @ 4V, 1MHzThrough HoleR6, AxialR-6-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 5A DO214AB ActiveStandard600V5A1.95V @ 5AFast Recovery =< 500ns, > 200mA (Io)23ns3µA @ 600V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 100V 3A AXIAL ActiveStandard100V3A1.25V @ 3AFast Recovery =< 500ns, > 200mA (Io)300ns10µA @ 100V
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Through HoleDO-201AD, AxialAxial-65°C ~ 125°C
ON Semiconductor DIODE GEN PURP 200V 3A DO201AD ActiveStandard200V3A1.25V @ 3AFast Recovery =< 500ns, > 200mA (Io)300ns10µA @ 200V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 125°C
ON Semiconductor DIODE GEN PURP 400V 3A DO201AD ActiveStandard400V3A1.25V @ 3AFast Recovery =< 500ns, > 200mA (Io)300ns10µA @ 400V
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Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 125°C
Vishay Semiconductor Diodes Division DIODE AVALANCHE 1000V 3A SOD64 ActiveAvalanche1000V3A1.2V @ 3AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 1000V
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Through HoleSOD-64, AxialSOD-64-55°C ~ 175°C
Diodes Incorporated DIODE GEN PURP 600V 10A R6 ActiveStandard600V10A1V @ 10AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 600V80pF @ 4V, 1MHzThrough HoleR6, AxialR-6-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A DO214AB ActiveStandard200V3A875mV @ 3AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 200V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-65°C ~ 175°C
Diodes Incorporated DIODE SBR 45V 10A POWERDI5 ActiveSuper Barrier45V10A470mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 45V
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Surface MountPowerDI™ 5PowerDI™ 5-55°C ~ 150°C
Diodes Incorporated DIODE SBR 60V 10A TO252 ActiveSuper Barrier60V10A520mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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400µA @ 60V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-55°C ~ 150°C
Micro Commercial Co DIODE GEN PURP 600V 6A DO214AB ActiveStandard600V6A1V @ 6AStandard Recovery >500ns, > 200mA (Io)
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5µA @ 600V150pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C