|
Micro Commercial Co |
DIODE GEN PURP 1KV 6A DO201AD |
Active | Standard | 1000V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 150pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
Micro Commercial Co |
DIODE GEN PURP 600V 6A DO201AD |
Active | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 150pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
ON Semiconductor |
DIODE SCHOTTKY 100V 1A SMA |
Active | Schottky | 100V | 1A | 760mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40µA @ 100V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 175°C |
|
ON Semiconductor |
DIODE SCHOTTKY 200V 3A SMC |
Active | Schottky | 200V | 3A | 840mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1mA @ 200V | - | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
|
ON Semiconductor |
DIODE SCHOTTKY 45V 8A AXIAL |
Active | Schottky | 45V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Through Hole | DO-201AA, DO-27, Axial | Axial | -65°C ~ 125°C |
|
ON Semiconductor |
DIODE SCHOTTKY 45V 15A 5DFN |
Active | Schottky | 45V | 15A | 570mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 45V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
Active | Avalanche | 200V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 200V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 3A DO214AB |
Active | Schottky | 90V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 90V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
Diodes Incorporated |
DIODE GEN PURP 100V 3A SMB |
Active | Standard | 100V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
|
Littelfuse Inc. |
DIODE SCHOTTKY 10A 100V TO-277B |
Active | Schottky | 100V | 10A | 700mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 150°C |
|
STMicroelectronics |
DIODE RECT 100V 20A DPAK |
Active | FERD (Field Effect Rectifier Diode) | 100V | 20A | 705mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 140µA @ 100V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
Diodes Incorporated |
DIODE GEN PURP 50V 10A R6 |
Active | Standard | 50V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 150pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -65°C ~ 150°C |
|
Diodes Incorporated |
DIODE SCHOTTKY 100V 3A POWERDI5 |
Active | Schottky | 100V | 3A | 840mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
|
Diodes Incorporated |
DIODE SCHOTTKY 20V 5A SMC |
Active | Schottky | 20V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 3A SOD64 |
Active | Avalanche | 600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
Central Semiconductor Corp |
DIODE SCHOTTKY 100V 2A SMB |
Active | Schottky | 100V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 120pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 12A TO277A |
Active | Schottky | 120V | 12A | 780mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 5A SMC |
Active | Standard | 600V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 1µA @ 600V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
Active | Standard | 400V | 3A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
STMicroelectronics |
DIODE GEN PURP 200V 4A DPAK |
Active | Standard | 200V | 4A | 1.05V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 3µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A P600 |
Active | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 100V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 6A P600 |
Active | Standard | 800V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 800V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A P600 |
Active | Standard | 400V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 400V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A P600 |
Active | Standard | 400V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 400V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A P600 |
Active | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 600V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A P600 |
Active | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 100V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A P600 |
Active | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 600V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
|
Micro Commercial Co |
DIODE SCHOTTKY 45V 10A R6 |
Active | Schottky | 45V | 10A | 550mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
Diodes Incorporated |
DIODE SBR 60V 20A POWERDI5 |
Active | Super Barrier | 60V | 20A | 570mV @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 180µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI®5 | -55°C ~ 150°C |
|
Diodes Incorporated |
DIODE SBR 60V 8A POWERDI5 |
Active | Super Barrier | 60V | 8A | 620mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 175°C |
|
ON Semiconductor |
DIODE GEN PURP 400V 3A DPAK |
Active | Standard | 400V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
|
ON Semiconductor |
DIODE GEN PURP 1KV 3A DO201AD |
Active | Standard | 1000V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
|
ON Semiconductor |
DIODE GEN PURP 400V 3A DO201AD |
Active | Standard | 400V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
|
ON Semiconductor |
DIODE GEN PURP 50V 3A DO201AD |
Active | Standard | 50V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
|
ON Semiconductor |
DIODE GEN PURP 200V 2A AXIAL |
Active | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
|
ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD |
Active | Standard | 600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
|
ON Semiconductor |
DIODE GEN PURP 100V 3A AXIAL |
Active | Standard | 100V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | Axial | -65°C ~ 150°C |
|
ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
Active | Standard | 200V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 15A TO277A |
Active | Schottky | 100V | 15A | 700mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
Diodes Incorporated |
DIODE GEN PURP 400V 10A R6 |
Active | Standard | 400V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 150pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -65°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A DO214AB |
Active | Standard | 600V | 5A | 1.95V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 23ns | 3µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
ON Semiconductor |
DIODE GEN PURP 100V 3A AXIAL |
Active | Standard | 100V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 100V | - | Through Hole | DO-201AD, Axial | Axial | -65°C ~ 125°C |
|
ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
Active | Standard | 200V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
ON Semiconductor |
DIODE GEN PURP 400V 3A DO201AD |
Active | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1000V 3A SOD64 |
Active | Avalanche | 1000V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 1000V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
Diodes Incorporated |
DIODE GEN PURP 600V 10A R6 |
Active | Standard | 600V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 80pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -65°C ~ 150°C |
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
Active | Standard | 200V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
Diodes Incorporated |
DIODE SBR 45V 10A POWERDI5 |
Active | Super Barrier | 45V | 10A | 470mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
Diodes Incorporated |
DIODE SBR 60V 10A TO252 |
Active | Super Barrier | 60V | 10A | 520mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
|
Micro Commercial Co |
DIODE GEN PURP 600V 6A DO214AB |
Active | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 150pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |