Diodes - Rectifiers - Single - Discrete Semiconductor Products - VS-40EPS08PBF C3D06065I STTH30R04G DSEP29-12A - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VS-40EPS08PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 40A TO247AC	Active	Standard	800V	40A	1.1V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 800V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
C3D06065I	Cree/Wolfspeed	DIODE SCHOTTKY 650V 13A TO220-2	Active	Silicon Carbide Schottky	650V	13A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	50µA @ 650V	295pF @ 0V, 1MHz	Through Hole	TO-220-2 Isolated Tab	TO-220-2 Isolated Tab	-55°C ~ 175°C
STTH30R04G	STMicroelectronics	DIODE GEN PURP 400V 30A D2PAK	Active	Standard	400V	30A	1.45V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	15µA @ 400V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
DSEP29-12A	IXYS	DIODE GEN PURP 1.2KV 30A TO220AC	Active	Standard	1200V	30A	2.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	250µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
ISL9R3060P2	ON Semiconductor	DIODE GEN PURP 600V 30A TO220AC	Active	Standard	600V	30A	2.4V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	100µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
VS-8EWF06S-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO252AA	Active	Standard	600V	8A	1.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	100µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
VS-8EWF04S-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A TO252AA	Active	Standard	400V	8A	1.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	100µA @ 400V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
VS-8EWF02S-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 8A TO252AA	Active	Standard	200V	8A	1.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	100µA @ 200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
GP2D005A120A	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 5A TO220-2	Active	Silicon Carbide Schottky	1200V	5A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	10µA @ 1200V	317pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
DSS60-0045B	IXYS	DIODE SCHOTTKY 45V 60A TO247AD	Active	Schottky	45V	60A	600mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 45V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 150°C
1N5811C.TR	Semtech Corporation	DIODE GEN PURP 150V 6A AXIAL	Active	Standard	150V	6A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	60pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
DSEI30-12A	IXYS	DIODE GEN PURP 1.2KV 26A TO247AD	Active	Standard	1200V	26A	2.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	750µA @ 1200V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
C3D08060G	Cree/Wolfspeed	DIODE SCHOTTKY 600V 8A TO263-2	Active	Silicon Carbide Schottky	600V	24A (DC)	1.8V @ 8A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	441pF @ 0V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-2	-55°C ~ 175°C
VS-40EPS16PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 40A TO247AC	Active	Standard	1600V	40A	1.14V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1600V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
APT30D60BG	Microsemi Corporation	DIODE GEN PURP 600V 30A TO247	Active	Standard	600V	30A	1.8V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
C3D08065E	Cree/Wolfspeed	DIODE SCHOTTKY 650V 25.5A TO252	Active	Silicon Carbide Schottky	650V	25.5A (DC)	1.8V @ 8A	No Recovery Time > 500mA (Io)	0ns	50µA @ 650V	395pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
DSI45-16A	IXYS	DIODE GEN PURP 1.6KV 45A TO247AD	Active	Standard	1600V	45A	1.28V @ 45A	Standard Recovery >500ns, > 200mA (Io)	-	20µA @ 1600V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 175°C
STPSC1006D	STMicroelectronics	DIODE SCHOTTKY 600V 10A TO220AC	Active	Silicon Carbide Schottky	600V	10A	1.75V @ 10A	No Recovery Time > 500mA (Io)	0ns	300µA @ 600V	650pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
VS-65PQ015PBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15V 65A TO247AC	Active	Schottky	15V	65A	500mV @ 65A	Fast Recovery =< 500ns, > 200mA (Io)	-	18mA @ 15V	-	Through Hole	TO-247-3	TO-247AC	-55°C ~ 125°C
STTH3012D	STMicroelectronics	DIODE GEN PURP 1.2KV 30A TO220AC	Active	Standard	1200V	30A	2.25V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	115ns	20µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
VS-60APU02PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 60A TO247AC	Active	Standard	200V	60A	1.08V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 200V	-	Through Hole	TO-247-3	TO-247AC	-55°C ~ 175°C
VS-100BGQ100	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 100A POWIRTA	Active	Schottky	100V	100A	1.04V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 100V	-	Through Hole	PowerTab™, PowIRtab™	PowIRtab™	-55°C ~ 175°C
STPSC12065DY	STMicroelectronics	DIODE SCHTKY 650V 12A TO220AC	Active	Silicon Carbide Schottky	650V	12A	1.45V @ 12A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	750pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
RURG5060	ON Semiconductor	DIODE GEN PURP 600V 50A TO247	Active	Standard	600V	50A	1.6V @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 175°C
1N649-1	Microsemi Corporation	DIODE GEN PURP 600V 400MA DO35	Active	Standard	600V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 600V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
IDW100E60FKSA1	Infineon Technologies	DIODE GEN PURP 600V 150A TO247-3	Active	Standard	600V	150A (DC)	2V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	40µA @ 600V	-	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
APT75DQ60BG	Microsemi Corporation	DIODE GEN PURP 600V 75A TO247	Active	Standard	600V	75A	2.5V @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	31ns	25µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
RHRG5060	ON Semiconductor	DIODE GEN PURP 600V 50A TO247	Active	Standard	600V	50A	2.1V @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 175°C
STPSC1206D	STMicroelectronics	DIODE SCHOTTKY 600V 12A TO220AC	Active	Silicon Carbide Schottky	600V	12A	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	150µA @ 600V	750pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
APT30D100BG	Microsemi Corporation	DIODE GEN PURP 1KV 30A TO247	Active	Standard	1000V	30A	2.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	290ns	250µA @ 1000V	-	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
SCS310APC9	Rohm Semiconductor	DIODE SC SCHKY 650V 10A TO220ACP	Active	Silicon Carbide Schottky	650V	10A (DC)	1.5V @ 10A	No Recovery Time > 500mA (Io)	0ns	50µA @ 650V	500pF @ 1V, 1MHz	Through Hole	TO-220-2	-	175°C (Max)
DSEI60-02A	IXYS	DIODE GEN PURP 200V 69A TO247AD	Active	Standard	200V	69A	1.08V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 200V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
VS-60EPS08PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 60A TO247AC	Active	Standard	800V	60A	1.09V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 800V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
IDH05G120C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 1.2KV 5A TO220-2	Active	Silicon Carbide Schottky	1200V	5A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	33µA @ 1200V	301pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
DSEI60-10A	IXYS	DIODE GEN PURP 1KV 60A TO247AD	Active	Standard	1000V	60A	2.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	3mA @ 1000V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
VS-1N1184RA	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 40A DO203AB	Active	Standard	100V	40A	1.3V @ 126A	Standard Recovery >500ns, > 200mA (Io)	-	2.5mA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 200°C
VS-1N1186A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 40A DO203AB	Active	Standard	200V	40A	1.3V @ 126A	Standard Recovery >500ns, > 200mA (Io)	-	2.5mA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 200°C
APT60D60BG	Microsemi Corporation	DIODE GEN PURP 600V 60A TO247	Active	Standard	600V	60A	1.8V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	130ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
VS-60EPU06PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AC	Active	Standard	600V	60A	1.68V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	81ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 175°C
VS-40EPF12PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 40A TO247AC	Active	Standard	1200V	40A	1.4V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	450ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
STTH6010W	STMicroelectronics	DIODE GEN PURP 1KV 60A DO247	Active	Standard	1000V	60A	2V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	115ns	20µA @ 1000V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
STTH6012W	STMicroelectronics	DIODE GEN PURP 1.2KV 60A DO247	Active	Standard	1200V	60A	2.25V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	125ns	30µA @ 1200V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
1N5616	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
VS-12FR120	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 12A DO203AA	Active	Standard, Reverse Polarity	1200V	12A	1.26V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 1200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
1N5620	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL	Active	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
APT60D100BG	Microsemi Corporation	DIODE GEN PURP 1KV 60A TO247	Active	Standard	1000V	60A	2.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	280ns	250µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
VS-12F120	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 12A DO203AA	Active	Standard	1200V	12A	1.26V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 1200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
DSEP60-12A	IXYS	DIODE GEN PURP 1.2KV 60A TO247AD	Active	Standard	1200V	60A	2.66V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	650µA @ 1200V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-25F120	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 25A DO203AA	Active	Standard	1200V	25A	1.3V @ 78A	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 1200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
GP2D010A120B	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 10A TO247-2	Active	Silicon Carbide Schottky	1200V	10A	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	20µA @ 1200V	635pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C

Manufacturers for Diodes - Rectifiers - Single