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Diodes Incorporated |
DIODE SCHOTTKY 50V 3A SMB |
Active | Schottky | 50V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 1KV 5A SMC |
Active | Standard | 1000V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 200V 3A SMC |
Active | Standard | 200V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 45pF @ 0V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 800V 5A SMC |
Active | Standard | 800V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 30V 1A POWERDI323 |
Active | Schottky | 30V | 1A | 420mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | 40pF @ 10V, 1MHz | Surface Mount | PowerDI™ 323 | PowerDI™ 323 | -65°C ~ 125°C |
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Diodes Incorporated |
DIODE GEN PURP 200V 3A SMC |
Active | Standard | 200V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 50V 3A SMC |
Active | Schottky | 50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A TO277A |
Active | Standard | 400V | 6A | 1.2V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 60V 3A DO15 |
Active | Schottky | 60V | 3A | 620mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 60V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 3A DO201AD |
Active | Schottky | 100V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 3A DO201AD |
Active | Schottky | 90V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 90V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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Diodes Incorporated |
DIODE SCHOTTKY 100V 5A POWERDI5 |
Active | Schottky | 100V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.5µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI®5 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 20V 4A SMC |
Active | Schottky | 20V | 4A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 5A TO277-3 |
Active | Schottky | 40V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 40V | 730pF @ 0V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 4.9A DO214AB |
Active | Schottky | 45V | 4.9A | 420mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.85mA @ 45V | 1216pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -40°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 500MA SMD3 |
Active | Schottky | 40V | 500mA | 550mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 125pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMD3 | 125°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 200V 4A SMC |
Active | Schottky | 200V | 4A | 870mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | SMC | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 70V 200MA DO35 |
Active | Standard | 70V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 60V | 8pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 250V 200MA DO35 |
Last Time Buy | Standard | 250V | 200mA | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 3A SOD128 |
Active | Standard | 200V | 3A | 1.02V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 21ns | 1.6µA @ 200V | - | Surface Mount | SOD-128 | SOD128Flat | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A DO214AA |
Active | Standard | 600V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 30V 1A POWERDI123 |
Active | Schottky | 30V | 1A | 360mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 76pF @ 10V, 1MHz | Surface Mount | POWERDI®123 | PowerDI™ 123 | -40°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 2A SOD57 |
Active | Avalanche | 1000V | 2A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 100V 1A SMA |
Active | Schottky | 100V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 50pF @ 1V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1A SOD57 |
Active | Avalanche | 600V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 5A DO201AD |
Active | Schottky | 30V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 500pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 5A DO201AD |
Active | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 500pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 2A MFLAT |
Active | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 95pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5A DO201AD |
Active | Schottky | 50V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AA |
Active | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 125°C |
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STMicroelectronics |
DIODE GEN PURP 1KV 1A DO41 |
Active | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 150V 1A SMA |
Active | Schottky | 150V | 1A | 820mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 150V | - | Surface Mount | DO-214AC, SMA | SMA | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 2A SOD57 |
Active | Avalanche | 100V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
Active | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 36pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
Active | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 36pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 100V 5A SOD128 |
Active | Schottky | 100V | 5A | 760mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.5µA @ 100V | - | Surface Mount | SOD-128 | SOD128Flat | -40°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 600V 3A SMC |
Active | Standard | 600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
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Diodes Incorporated |
DIODE RECT SBR 150V 1A SMA |
Active | Super Barrier | 150V | 1A | 700mV @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 60V 5A DO201AD |
Active | Schottky | 60V | 5A | 670mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 380pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1.6KV 800MA SOD57 |
Active | Avalanche | 1600V | 800mA | 1.25V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 1600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 75V 250MA SOT23 |
Active | Standard | 75V | 250mA | 1.1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 500pA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
Active | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 400V 6A R6 |
Active | Standard | 400V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | R6, Axial | R-6 | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 600V 6A R6 |
Active | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | R6, Axial | R-6 | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 50V 6A R6 |
Active | Standard | 50V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | R6, Axial | R-6 | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 200V 6A R6 |
Active | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | R6, Axial | R-6 | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 800V 6A R6 |
Active | Standard | 800V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | R6, Axial | R-6 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 150V 200MA DO35 |
Active | Standard | 150V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | 8pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
Active | Schottky | 100V | 1.9A (DC) | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | 230pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
Active | Schottky | 100V | 1.9A (DC) | 770mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | 230pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -40°C ~ 150°C |