Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SF68G B0G SS315HR7G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SF68G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A DO201AD	Active	Standard	600V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS315HR7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO214AB	Active	Schottky	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS320HR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK56CHM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO214AB	Active	Schottky	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SF65GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 6A DO201AD	Active	Standard	300V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF66GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A DO201AD	Active	Standard	400V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF65GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 6A DO201AD	Active	Standard	300V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF66GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A DO201AD	Active	Standard	400V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF65GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 6A DO201AD	Active	Standard	300V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF66GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A DO201AD	Active	Standard	400V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR809 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 8A DO201AD	Active	Schottky	90V	8A	920mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR809 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 8A DO201AD	Active	Schottky	90V	8A	920mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR809 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 8A DO201AD	Active	Schottky	90V	8A	920mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF1001G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A TO220AB	Active	Standard	50V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF1002G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A TO220AB	Active	Standard	100V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF1003G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 10A TO220AB	Active	Standard	150V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF1004G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A TO220AB	Active	Standard	200V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SK510CHR7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO214AB	Active	Schottky	100V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK515CHR7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A DO214AB	Active	Schottky	150V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK520CHR7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 5A DO214AB	Active	Schottky	200V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK59CHR7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO214AB	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MBRF735 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 35V 7.5A ITO220AC	Active	Schottky	35V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRF745 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 7.5A ITO220AC	Active	Schottky	45V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRF750 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 7.5A ITO220AC	Active	Schottky	50V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRF760 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 7.5A ITO220AC	Active	Schottky	60V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SF67GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 6A DO201AD	Active	Standard	500V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF68GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A DO201AD	Active	Standard	600V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF67GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 6A DO201AD	Active	Standard	500V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF68GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A DO201AD	Active	Standard	600V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SRA820 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A TO220AC	Active	Schottky	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SRA830 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 8A TO220AC	Active	Schottky	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SF67GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 6A DO201AD	Active	Standard	500V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF68GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A DO201AD	Active	Standard	600V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
MBR750HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 7.5A TO220AC	Active	Schottky	60V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR760HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 7.5A TO220AC	Active	Schottky	60V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR790HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 7.5A TO220AC	Active	Schottky	90V	7.5A	920mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA801HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A TO220AC	Active	Standard	50V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA802HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A TO220AC	Active	Standard	100V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA803HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A TO220AC	Active	Standard	200V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA804HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO220AC	Active	Standard	400V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA805HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA806HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A TO220AC	Active	Standard	800V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA807HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 8A TO220AC	Active	Standard	-	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBRF1045 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 10A ITO220AC	Active	Schottky	45V	10A	700mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SK82C V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 8A 20V DO-214AB	Active	Schottky	20V	8A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SK83C V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 8A 30V DO-214AB	Active	Schottky	30V	8A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SK84C V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 8A 40V DO-214AB	Active	Schottky	40V	8A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SK85C V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 8A 50V DO-214AB	Active	Schottky	50V	8A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK86C V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 8A 60V DO-214AB	Active	Schottky	60V	8A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR460 R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C

Manufacturers for Diodes - Rectifiers - Single