Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SR1204 B0G SR815 B0G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SR1204 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 12A DO201AD	Active	Schottky	40V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
SR815 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 8A DO201AD	Active	Schottky	150V	8A	1.02V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SFA802G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A TO220AC	Active	Standard	100V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFAF501G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A ITO220AC	Active	Standard	50V	5A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF502G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A ITO220AC	Active	Standard	100V	5A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MURF8L60HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC	Active	Standard	600V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 175°C
MBR1035HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 35V 10A TO220AC	Active	Standard	35V	10A	700mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR1045HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 45V 10A TO220AC	Active	Standard	45V	10A	700mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR1050HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A TO220AC	Active	Standard	50V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR1060HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 10A TO220AC	Active	Schottky	60V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR1090HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 90V 10A TO220AC	Active	Standard	90V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR7100HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 7.5A TO220AC	Active	Schottky	100V	7.5A	920mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBRF1050HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 10A ITO220AC	Active	Schottky	50V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRF1060HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 10A ITO220AC	Active	Schottky	60V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRF1090HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 10A ITO220AC	Active	Schottky	90V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SR1050 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 10A TO220AB	Active	Schottky	50V	10A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SR1060 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 10A TO220AB	Active	Schottky	60V	10A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SFF506G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A ITO220AB	Active	Standard	400V	5A	1.3V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SRAF5150 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A ITO220AC	Active	Schottky	150V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFA803G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 8A TO220AC	Active	Standard	150V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFAS801GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A TO263AB	Active	Standard	50V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS802GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A TO263AB	Active	Standard	100V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS803GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 8A TO263AB	Active	Standard	150V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS804GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A TO263AB	Active	Standard	200V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS805GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 8A TO263AB	Active	Standard	300V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS806GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO263AB	Active	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS807GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 8A TO263AB	Active	Standard	500V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS808GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO263AB	Active	Standard	600V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SF801G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A TO220AB	Active	Standard	50V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF802G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A TO220AB	Active	Standard	100V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF803G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 8A TO220AB	Active	Standard	150V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF804G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A TO220AB	Active	Standard	200V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF805G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 8A TO220AB	Active	Standard	300V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF806G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO220AB	Active	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SK82C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A DO214AB	Not For New Designs	Schottky	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SK83C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 8A DO214AB	Not For New Designs	Schottky	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SK84C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 8A DO214AB	Not For New Designs	Schottky	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SK85C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 8A DO214AB	Not For New Designs	Schottky	50V	8A	750mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK82C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 8A 20V DO-214AB	Active	Schottky	20V	8A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SK83C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 8A 30V DO-214AB	Active	Schottky	30V	8A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SK84C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 8A 40V DO-214AB	Active	Schottky	40V	8A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SK85C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 8A 50V DO-214AB	Active	Schottky	50V	8A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SR810HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 8A DO201AD	Active	Schottky	100V	8A	920mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR810HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 8A DO201AD	Active	Schottky	100V	8A	920mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR810HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 8A DO201AD	Active	Schottky	100V	8A	920mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HERA801G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A TO220AC	Active	Standard	50V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	65pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
HERA802G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A TO220AC	Active	Standard	100V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	65pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
HERA803G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A TO220AC	Active	Standard	200V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	65pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
HERA804G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 8A TO220AC	Active	Standard	300V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	65pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
HERA805G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO220AC	Active	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single