Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 5A ITO220AB ActiveStandard200V5A980mV @ 2.5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V70pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD ActiveStandard600V4A1.28V @ 4AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 600V65pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 8A DO201AD ActiveSchottky90V8A920mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 8A DO214AB Not For New DesignsSchottky100V8A900mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 100V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 8A DO214AB ActiveSchottky20V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 8A DO214AB ActiveSchottky30V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 8A DO214AB ActiveSchottky40V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 8A DO214AB ActiveSchottky50V8A750mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 8A DO214AB ActiveSchottky60V8A750mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD ActiveStandard600V4A1.28V @ 4AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 600V65pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 8A DO201AD ActiveSchottky90V8A920mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 5A ITO220AB ActiveStandard50V5A980mV @ 2.5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 50V70pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 5A ITO220AB ActiveStandard100V5A980mV @ 2.5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V70pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 8A TO220AC ActiveSchottky20V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
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Through HoleTO-220-2TO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 8A TO220AC ActiveSchottky30V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Through HoleTO-220-2TO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 8A TO220AC ActiveSchottky40V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Through HoleTO-220-2TO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 5A ITO220AC ActiveSchottky100V5A850mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 5A ITO220AC ActiveSchottky20V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 5A ITO220AC ActiveSchottky30V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 5A ITO220AC ActiveSchottky40V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 5A ITO220AC ActiveSchottky90V5A850mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD ActiveStandard600V4A1.28V @ 4AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 600V65pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 8A DO201AD ActiveSchottky90V8A920mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 35V 10A ITO220AC ActiveSchottky35V10A700mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 35V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 10A TO263AB ActiveSchottky45V10A840mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 45V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 10A TO263AB ActiveSchottky50V10A950mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 50V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 10A TO263AB ActiveSchottky60V10A950mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 60V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 10A TO263AB ActiveSchottky90V10A
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Fast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 5A ITO220AB ActiveStandard300V5A1.3V @ 2.5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 300V50pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 8A TO220AC ActiveStandard50V8A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 50V100pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 10A TO220AB ActiveSchottky20V10A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
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Through HoleTO-220-3TO-220AB-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 10A TO220AB ActiveSchottky30V10A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Through HoleTO-220-3TO-220AB-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 10A TO220AB ActiveSchottky40V10A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Through HoleTO-220-3TO-220AB-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 10A TO220AC ActiveStandard150V10A1.05V @ 10AStandard Recovery >500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 10A TO220AC ActiveStandard200V10A1.05V @ 10AStandard Recovery >500ns, > 200mA (Io)
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100µA @ 200V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 10A ITO220AC ActiveSchottky150V10A1.05V @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 5A ITO220AC ActiveSchottky100V5A900mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 5A ITO220AC ActiveSchottky150V5A1.02V @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 5A ITO220AC ActiveSchottky200V5A1.02V @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 200V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHTKY 100V 7.5A ITO220AC ActiveSchottky100V7.5A920mV @ 7.5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 7.5A ITO220AC ActiveSchottky90V7.5A920mV @ 7.5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 12A DO201AD ActiveSchottky20V12A550mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
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Through HoleDO-201AD, AxialDO-201AD-50°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 12A DO201AD ActiveSchottky30V12A550mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Through HoleDO-201AD, AxialDO-201AD-50°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 12A DO201AD ActiveSchottky40V12A550mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Through HoleDO-201AD, AxialDO-201AD-50°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 8A DO201AD ActiveSchottky150V8A1.02V @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 12A DO201AD ActiveSchottky30V12A550mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Through HoleDO-201AD, AxialDO-201AD-50°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 12A DO201AD ActiveSchottky40V12A550mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through HoleDO-201AD, AxialDO-201AD-50°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 8A DO201AD ActiveSchottky150V8A1.02V @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 12A DO201AD ActiveSchottky20V12A550mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
-
Through HoleDO-201AD, AxialDO-201AD-50°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 12A DO201AD ActiveSchottky30V12A550mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
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Through HoleDO-201AD, AxialDO-201AD-50°C ~ 150°C