Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 5A DO214AB Not For New DesignsSchottky150V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 150V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 5A DO214AB Not For New DesignsSchottky200V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 200V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AB ActiveStandard200V3A850mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 200V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 5A 100V DO-214AB ActiveSchottky100V5A
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Fast Recovery =< 500ns, > 200mA (Io)
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300µA @ 100V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 5A 150V DO-214AB ActiveSchottky150V5A
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Fast Recovery =< 500ns, > 200mA (Io)
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300µA @ 150V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 5A 200V DO-214AB ActiveSchottky200V5A
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Fast Recovery =< 500ns, > 200mA (Io)
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300µA @ 200V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 5A 90V DO-214AB ActiveSchottky90V5A
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Fast Recovery =< 500ns, > 200mA (Io)
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300µA @ 90V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 3A DO214AB Not For New DesignsSchottky20V3A410mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 20V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 3A DO214AB Not For New DesignsSchottky30V3A410mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 30V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 3A DO214AB Not For New DesignsSchottky40V3A410mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 3A 20V DO-214AB ActiveSchottky20V3A
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Fast Recovery =< 500ns, > 200mA (Io)
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200µA @ 20V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 3A 30V DO-214AB ActiveSchottky30V3A
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Fast Recovery =< 500ns, > 200mA (Io)
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200µA @ 30V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 3A 40V DO-214AB ActiveSchottky40V3A
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Fast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 3A DO214AB ActiveSchottky20V3A410mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 20V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 3A DO214AB ActiveSchottky30V3A410mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 30V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 3A DO214AB ActiveSchottky40V3A410mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 5A DO214AB ActiveSchottky100V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 100V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 5A DO214AB ActiveSchottky150V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 150V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 5A DO214AB ActiveSchottky200V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 200V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A DO201AD ActiveStandard50V6A975mV @ 6AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 50V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A DO201AD ActiveStandard100V6A975mV @ 6AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 100V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A DO201AD ActiveStandard50V6A975mV @ 6AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 50V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A DO201AD ActiveStandard100V6A975mV @ 6AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 100V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A DO201AD ActiveStandard50V6A975mV @ 6AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 50V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A DO201AD ActiveStandard100V6A975mV @ 6AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 100V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 5A DO214AB ActiveSchottky20V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 5A DO214AB ActiveSchottky30V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 5A DO214AB ActiveSchottky40V5A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 5A DO214AB ActiveSchottky50V5A750mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO201AD ActiveStandard400V3A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)35ns20µA @ 400V
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Through HoleDO-201AD, AxialDO-201AD-40°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD ActiveStandard600V3A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)35ns20µA @ 600V
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Through HoleDO-201AD, AxialDO-201AD-40°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 4A DO201AD ActiveStandard150V4A1V @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 150V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD ActiveStandard200V4A1V @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 200V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 8A DO201AD ActiveSchottky50V8A700mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 8A DO201AD ActiveSchottky60V8A700mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 5A DO214AB Not For New DesignsSchottky90V5A850mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 90V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 3A DO214AB ActiveSchottky150V3A950mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 4A DO201AD ActiveStandard150V4A1V @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 150V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD ActiveStandard200V4A1V @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 200V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 8A DO201AD ActiveSchottky50V8A700mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 4A DO201AD ActiveStandard150V4A1V @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 150V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD ActiveStandard200V4A1V @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 200V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 8A DO201AD ActiveSchottky50V8A700mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 8A DO201AD ActiveSchottky60V8A700mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 4A DO201AD ActiveStandard500V4A1.7V @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 500V80pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD ActiveStandard600V4A1.7V @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 600V80pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A DO201AD ActiveStandard50V6A975mV @ 6AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 50V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A DO201AD ActiveStandard100V6A975mV @ 6AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 100V100pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 8A DO201AD ActiveSchottky20V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 8A DO201AD ActiveSchottky30V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 125°C