Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SSL24HM4G ES3F M6G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SSL24HM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AA	Active	Schottky	40V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
ES3F M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AB	Not For New Designs	Standard	300V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3F V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AB	Active	Standard	300V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3G V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK315B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO214AA	Active	Schottky	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK320B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO214AA	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK320BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO214AA	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR305S V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR310S V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR315S V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Active	Standard	150V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
SR509HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO201AD	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR510HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO201AD	Active	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR509HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO201AD	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR510HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO201AD	Active	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR509HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO201AD	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR510HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO201AD	Active	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
UG54G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO201AD	Active	Standard	200V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG54G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO201AD	Active	Standard	200V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
SK310B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO214AA	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SSL22 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AA	Active	Schottky	20V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SSL23 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AA	Active	Schottky	30V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SSL24 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AA	Active	Schottky	40V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
ES3FBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AA	Active	Standard	300V	3A	1.13V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	41pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3GBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	Active	Standard	400V	3A	1.13V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	41pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3HBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 3A DO214AA	Active	Standard	500V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S4K M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 4A DO214AB	Not For New Designs	Standard	800V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4M M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 4A DO214AB	Not For New Designs	Standard	-	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SR515HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A DO201AD	Active	Schottky	150V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR520HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 5A DO201AD	Active	Schottky	200V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR515HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A DO201AD	Active	Schottky	150V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR520HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 5A DO201AD	Active	Schottky	200V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR515HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A DO201AD	Active	Schottky	150V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR520HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 5A DO201AD	Active	Schottky	200V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS39 R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 3A DO214AB	Not For New Designs	Schottky	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR340S V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ES3HM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 3A DO214AB	Active	Standard	500V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3HR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 3A DO214AB	Active	Standard	500V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10GC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A DO214AB	Not For New Designs	Standard	400V	10A	1.1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10JC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A DO214AB	Not For New Designs	Standard	600V	10A	1.1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK310BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO214AA	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK315BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO214AA	Active	Schottky	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK510B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO214AA	Active	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK59B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO214AA	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR420SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB	Active	Standard	200V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR440SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO214AB	Active	Standard	400V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR460SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO214AB	Active	Standard	600V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
S12GCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 12A DO214AB	Active	Standard	400V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12JCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A DO214AB	Active	Standard	600V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12KCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 12A DO214AB	Active	Standard	800V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12MCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 12A DO214AB	Active	Standard	-	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single