Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SK52C M6G SK53C M6G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SK52C M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 5A DO214AB	Not For New Designs	Schottky	20V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK53C M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 5A DO214AB	Not For New Designs	Schottky	30V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK54C M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A DO214AB	Not For New Designs	Schottky	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK55C M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO214AB	Not For New Designs	Schottky	50V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS310HM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK52C V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 20V DO-214AB	Active	Schottky	20V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK53C V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 30V DO-214AB	Active	Schottky	30V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK54C V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 40V DO-214AB	Active	Schottky	40V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK55C V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 50V DO-214AB	Active	Schottky	50V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK56C V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 60V DO-214AB	Active	Schottky	60V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3G M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Not For New Designs	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SSL22HR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AA	Active	Schottky	20V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SSL23HR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AA	Active	Schottky	30V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SSL24HR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AA	Active	Schottky	40V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
6A100G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 6A R-6	Active	Standard	1000V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A100G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 6A R-6	Active	Standard	1000V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A100G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 6A R-6	Active	Standard	1000V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
SK320BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO214AA	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR320SB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	Active	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR320SBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	Active	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR340SB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	Active	Standard	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 400V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR340SBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	Active	Standard	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR360SB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR360SBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
ES3J M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Not For New Designs	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3J V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
UG54G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO201AD	Active	Standard	200V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG56G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO201AD	Active	Standard	400V	5A	1.55V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG58G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO201AD	Active	Standard	600V	5A	2.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	30µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
UG56G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO201AD	Active	Standard	400V	5A	1.55V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG58G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO201AD	Active	Standard	600V	5A	2.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	30µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
UG56G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO201AD	Active	Standard	400V	5A	1.55V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG58G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO201AD	Active	Standard	600V	5A	2.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	30µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
S5A M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A DO214AB	Not For New Designs	Standard	50V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB	Not For New Designs	Standard	100V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB	Not For New Designs	Standard	200V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5G M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AB	Not For New Designs	Standard	400V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5J M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AB	Not For New Designs	Standard	600V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5K M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	Not For New Designs	Standard	800V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5M M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 5A DO214AB	Not For New Designs	Standard	-	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3FHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AB	Active	Standard	300V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK515B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A DO214AA	Active	Schottky	150V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS5A M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A DO214AB	Not For New Designs	Standard	50V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB	Not For New Designs	Standard	100V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5A V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A DO214AB	Active	Standard	50V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5B V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB	Active	Standard	100V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5D V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB	Active	Standard	200V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5F V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 5A DO214AB	Active	Standard	300V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12GC V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 12A DO214AB	Active	Standard	400V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12JC V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A DO214AB	Active	Standard	600V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single