Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SS33HR7G SS34HR7G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS33HR7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO214AB	Active	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SS34HR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 40V 3A DO214AB	Active	Standard	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SS35HR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK32B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO214AA	Active	Schottky	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SK33B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO214AA	Active	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SK34B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO214AA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SK35B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 3A DO214AA	Active	Schottky	50V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK36B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO214AA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK39B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 3A DO214AA	Active	Schottky	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SR502 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 5A DO201AD	Active	Schottky	20V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR503 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 5A DO201AD	Active	Schottky	30V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR502 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 5A DO201AD	Active	Schottky	20V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
MUR305SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR310SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR315SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Active	Standard	150V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR320SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
S4A M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 4A DO214AB	Not For New Designs	Standard	50V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 50V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO214AB	Not For New Designs	Standard	100V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB	Not For New Designs	Standard	200V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4G M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO214AB	Not For New Designs	Standard	400V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4J M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO214AB	Not For New Designs	Standard	600V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	100µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR360S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Not For New Designs	Standard	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR340S V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR360S V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
SS39 M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 3A DO214AB	Not For New Designs	Schottky	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
UG2D B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	Active	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SR502HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO201AD	Active	Schottky	50V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SK32BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO214AA	Active	Schottky	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SK33BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO214AA	Active	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SK34BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO214AA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SK35BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 3A DO214AA	Active	Schottky	50V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK36BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO214AA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK39BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 3A DO214AA	Active	Schottky	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR305S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Not For New Designs	Standard	50V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR310S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Not For New Designs	Standard	100V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR315S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Not For New Designs	Standard	150V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR340SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR360SHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
S10KCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 10A DO214AB	Active	Standard	800V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10MCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 10A DO214AB	Active	Standard	-	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3K M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Not For New Designs	Standard	800V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 800V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HER301G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	Active	Standard	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER302G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD	Active	Standard	100V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER303G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	Active	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER304G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD	Active	Standard	300V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER305G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER306G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER307G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO201AD	Active	Standard	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER308G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO201AD	Active	Standard	-	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER304G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD	Active	Standard	300V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single