Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SS32 R7G SS33 R7G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS32 R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO214AB	Not For New Designs	Schottky	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SS33 R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO214AB	Not For New Designs	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SK310AHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO214AC	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK315AHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO214AC	Active	Schottky	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S10GCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A DO214AB	Active	Standard	400V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10JCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A DO214AB	Active	Standard	600V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3A V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3B V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3C V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Active	Standard	150V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3DV V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ESH3B V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ESH3C V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Active	Standard	150V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ESH3D V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR305S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Not For New Designs	Standard	50V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR310S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Not For New Designs	Standard	100V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR315S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Not For New Designs	Standard	150V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR320S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Not For New Designs	Standard	200V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
S8GC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A DO214AB	Not For New Designs	Standard	400V	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8JC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A DO214AB	Not For New Designs	Standard	600V	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8KC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A DO214AB	Not For New Designs	Standard	800V	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8MC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 8A DO214AB	Not For New Designs	Standard	-	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR305S V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR310S V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR315S V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Active	Standard	150V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR320S V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
S8GC V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A DO214AB	Active	Standard	400V	8A	-	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8JC V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A DO214AB	Active	Standard	600V	8A	-	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8KC V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A DO214AB	Active	Standard	800V	8A	-	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8MC V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 8A DO214AB	Active	Standard	-	8A	-	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10GC V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A DO214AB	Active	Standard	400V	10A	-	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10JC V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A DO214AB	Active	Standard	600V	10A	-	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10KC V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 10A DO214AB	Active	Standard	800V	10A	-	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10MC V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 10A DO214AB	Active	Standard	-	10A	-	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3DVHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HER301G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	Active	Standard	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER302G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD	Active	Standard	100V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER303G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	Active	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER301G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	Active	Standard	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER302G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD	Active	Standard	100V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER303G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	Active	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER304G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD	Active	Standard	300V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
S8GCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A DO214AB	Active	Standard	400V	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8JCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A DO214AB	Active	Standard	600V	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8KCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A DO214AB	Active	Standard	800V	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8MCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 8A DO214AB	Active	Standard	-	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK52BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 5A DO214AA	Active	Schottky	20V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK54BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A DO214AA	Active	Schottky	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK55BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO214AA	Active	Schottky	50V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK56BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO214AA	Active	Schottky	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS32HR7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO214AB	Active	Schottky	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C

Manufacturers for Diodes - Rectifiers - Single