Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - ES3F R7G ES3AHR7G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
ES3F R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AB	Not For New Designs	Standard	300V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3AHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3BHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3CHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Active	Standard	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3DHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3BHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3MHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AB	Active	Standard	-	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 1000V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
1N5820 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO201AD	Active	Schottky	20V	3A	475mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
1N5821 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO201AD	Active	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
1N5822 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO201AD	Active	Schottky	40V	3A	525mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
RS3DHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3GHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3JHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
1N5821 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO201AD	Active	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
1N5822 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO201AD	Active	Schottky	40V	3A	525mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
1N5821 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO201AD	Active	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
1N5822 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO201AD	Active	Schottky	40V	3A	525mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
MUR190A R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AL	Active	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
MUR190A R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AL	Active	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
MUR190HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AC	Active	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
MUR190HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AC	Active	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
S3A V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3B V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
UG2D R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	Active	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SS32HM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO214AB	Active	Schottky	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SS33HM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO214AB	Active	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
LL5817 L0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A MELF	Active	Schottky	20V	1A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 125°C
LL5818 L0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A MELF	Active	Schottky	30V	1A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 125°C
LL5819 L0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A MELF	Active	Schottky	40V	1A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 125°C
LSR102 L0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A MELF	Active	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 125°C
LSR103 L0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A MELF	Active	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 125°C
LSR104 L0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A MELF	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 125°C
LSR105 L0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A MELF	Active	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
LSR106 L0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A MELF	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	80pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
RS3K V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Active	Standard	800V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 800V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3DV R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Not For New Designs	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ESH3B R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Not For New Designs	Standard	100V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ESH3C R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Not For New Designs	Standard	150V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ESH3D R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Not For New Designs	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
RS3KHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Active	Standard	800V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 800V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK52B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 5A DO214AA	Active	Schottky	20V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK53B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 5A DO214AA	Active	Schottky	30V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK54B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A DO214AA	Active	Schottky	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK55B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO214AA	Active	Schottky	50V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK56B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO214AA	Active	Schottky	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS210LHRUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A SUB SMA	Active	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES2JHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS36 M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 60V 3A DO214AB	Not For New Designs	Standard	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS32 V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 20V DO-214AB	Active	Schottky	20V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SS33 V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 30V DO-214AB	Active	Schottky	30V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C

Manufacturers for Diodes - Rectifiers - Single