Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - ES1ALHRTG ES1BLHMTG - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
ES1ALHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BLHMTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BLHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CLHMTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	Active	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1ALHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1ALHRFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BLHRFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	Active	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CLHRFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	Active	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CLHRUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	Active	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SFT18G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SF2L4G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	Active	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
ES1JHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS22 M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SS23 M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SS24 M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SS25 M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A DO214AA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS26 M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A DO214AA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS25 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A DO214AA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR160A R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
MUR160A R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
ES1JL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES2LD M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	940mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2LG M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2LJ M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES1HL MTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A SUB SMA	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1HL RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A SUB SMA	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SFT17GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
ES1FLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FLHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1DLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FLHRFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GLHRFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FLHRUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FLHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GLHRUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29L MTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SK22AHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AC	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK23AHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AC	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK24AHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AC	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK25AHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A DO214AC	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK26AHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A DO214AC	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS29L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29L RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SFT18GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT19HA1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A TS-1	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
TSSA5U50 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO214AC	Active	Schottky	50V	5A	540mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single