Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SS29LHRVG MUR160HR0G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS29LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
MUR160HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AC	Active	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
SK110B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A DO214AA	Active	Schottky	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR160HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AC	Active	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
MUR160AHR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
MUR160AHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
SS210 M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A DO214AA	Active	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR160A B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
SSL12 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO214AC	Active	Schottky	20V	1A	390mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SSL13 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO214AC	Active	Schottky	30V	1A	390mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SSL14 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO214AC	Active	Schottky	40V	1A	390mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS34L RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SUB SMA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS36L RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS34L MHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SUB SMA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS36L MHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS34L MQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SUB SMA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS34L RQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SUB SMA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS34L RTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SUB SMA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS36L MQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS36L RQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS36L RTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS36L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES2LDHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	940mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2LGHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2LJHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ESH2BA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	Active	Standard	100V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
ESH2CA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AC	Active	Standard	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
ESH2DA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	Active	Standard	200V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
ES2LD R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	940mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2LG R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2LJ R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK210AHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A DO214AC	Active	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK215AHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A DO214AC	Active	Schottky	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK110BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A DO214AA	Active	Schottky	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2JAHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AC	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK29AHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A DO214AC	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS115HR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A DO214AC	Active	Schottky	150V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SFT15G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT15G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UF1A A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S3A M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Not For New Designs	Standard	50V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
FR301G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	Active	Standard	50V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
FR302G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD	Active	Standard	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
FR303G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	Active	Standard	200V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
FR304G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
FR301G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	Active	Standard	50V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
FR302G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD	Active	Standard	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
FR303G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	Active	Standard	200V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single