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Manufacturers for Diodes - Rectifiers - Single

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
SS23LHR3G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 2A SUB SMA ActiveSchottky30V2A500mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS23LHRFG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 2A SUB SMA ActiveSchottky30V2A500mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS24LHR3G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 2A SUB SMA ActiveSchottky40V2A500mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS24LHRFG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 2A SUB SMA ActiveSchottky40V2A500mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS25LHR3G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 2A SUB SMA ActiveSchottky50V2A700mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS25LHRFG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 2A SUB SMA ActiveSchottky50V2A700mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS26LHR3G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 2A SUB SMA ActiveSchottky60V2A700mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS26LHRFG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 2A SUB SMA ActiveSchottky60V2A700mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS23LHRVG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 2A SUB SMA ActiveSchottky30V2A500mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS24LHRUG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 2A SUB SMA ActiveSchottky40V2A500mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS24LHRVG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 2A SUB SMA ActiveSchottky40V2A500mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS26LHRVG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 2A SUB SMA ActiveSchottky60V2A700mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SRT19 A1G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 1A TS-1 ActiveSchottky90V1A800mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through HoleT-18, AxialTS-1-55°C ~ 150°C
HER202G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 2A DO204AC ActiveStandard100V2A1V @ 2AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 100V35pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
HER204G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 300V 2A DO204AC ActiveStandard300V2A1V @ 2AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 300V35pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
HER202G B0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 2A DO204AC ActiveStandard100V2A1V @ 2AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 100V35pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
HER203G B0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 200V 2A DO204AC ActiveStandard200V2A1V @ 2AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 200V35pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
HER204G B0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 300V 2A DO204AC ActiveStandard300V2A1V @ 2AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 300V35pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
MUR160HA0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO204AC ActiveStandard600V1A1.25V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 600V27pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 175°C
SFT11G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 ActiveStandard50V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 50V20pF @ 4V, 1MHzThrough HoleT-18, AxialTS-1-55°C ~ 150°C
ESDLW RQG
 Taiwan Semiconductor Corporation DIODE SUPER FAST ActiveStandard200V800mA950mV @ 800mAFast Recovery =< 500ns, > 200mA (Io)35ns1µA @ 200V21pF @ 4V, 1MHzSurface MountSOD-123WSOD-123W-55°C ~ 150°C
ESGLW RQG
 Taiwan Semiconductor Corporation DIODE SUPER FAST ActiveStandard400V800mA1.3V @ 800mAFast Recovery =< 500ns, > 200mA (Io)35ns1µA @ 400V20pF @ 4V, 1MHzSurface MountSOD-123WSOD-123W-55°C ~ 150°C
ESJLW RQG
 Taiwan Semiconductor Corporation DIODE SUPER FAST ActiveStandard600V800mA1.7V @ 800mAFast Recovery =< 500ns, > 200mA (Io)35ns1µA @ 600V19pF @ 4V, 1MHzSurface MountSOD-123WSOD-123W-55°C ~ 150°C
S3BBHR5G
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO214AA ActiveStandard100V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 100V40pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
S3DBHR5G
 Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AA ActiveStandard200V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 200V40pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
S3GBHR5G
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO214AA ActiveStandard400V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 400V40pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
S3ABHM4G
 Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO214AA ActiveStandard50V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 50V40pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
S3BBHM4G
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO214AA ActiveStandard100V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 100V40pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
S3DBHM4G
 Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AA ActiveStandard200V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 200V40pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
S3GBHM4G
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO214AA ActiveStandard400V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 400V40pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
HER205G R0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 2A DO204AC ActiveStandard400V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 400V35pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
HER206G R0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO204AC ActiveStandard600V2A1.7V @ 2AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 600V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
MUR160 R0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO204AC ActiveStandard600V1A1.25V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 600V27pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 175°C
SS210L M2G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 2A SUB SMA ActiveSchottky100V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS215L M2G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 2A SUB SMA ActiveSchottky150V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS210L MTG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 2A SUB SMA ActiveSchottky100V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS210L RTG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 2A SUB SMA ActiveSchottky100V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS215L MTG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 2A SUB SMA ActiveSchottky150V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS210L R3G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 2A SUB SMA ActiveSchottky100V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS210L RFG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 2A SUB SMA ActiveSchottky100V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS215L R3G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 2A SUB SMA ActiveSchottky150V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS215L RFG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 2A SUB SMA ActiveSchottky150V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
HER205G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 2A DO204AC ActiveStandard400V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 400V35pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
HER206G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO204AC ActiveStandard600V2A1.7V @ 2AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 600V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
HER205G B0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 2A DO204AC ActiveStandard400V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 400V35pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
HER206G B0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO204AC ActiveStandard600V2A1.7V @ 2AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 600V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
MUR160 B0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO204AC ActiveStandard600V1A1.25V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 600V27pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 175°C
SF2L8G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO204AC ActiveStandard600V2A1.7V @ 2AFast Recovery =< 500ns, > 200mA (Io)35ns1µA @ 600V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
ES1ALHM2G
 Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A SUB SMA ActiveStandard50V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 50V10pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
ES1ALHMTG
 Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A SUB SMA ActiveStandard50V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 50V10pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
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