Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SK26AHM2G SS29L MHG - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SK26AHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A DO214AC	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS29L MHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29L MQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29L RQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29L RTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SFT18GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT19HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A TS-1	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
ES2AA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AC	Active	Standard	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SRAS20100HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 20A TO263AB	Active	Schottky	100V	20A	920mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS2020HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 20A TO263AB	Active	Schottky	20V	20A	570mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS2030HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 20A TO263AB	Active	Schottky	30V	20A	570mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS2040HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 20A TO263AB	Active	Schottky	40V	20A	570mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS2050HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 20A TO263AB	Active	Schottky	50V	20A	700mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS2060HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 20A TO263AB	Active	Schottky	60V	20A	700mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS2090HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 20A TO263AB	Active	Schottky	90V	20A	920mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFF1001GA C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A ITO220AB	Active	Standard	50V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SF11G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF12G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF13G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO204AL	Active	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF14G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF11G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF12G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF13G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO204AL	Active	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF14G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF11G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF12G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF13G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO204AL	Active	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF14G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HER201G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO204AC	Active	Standard	50V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SS22L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22L MTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23L MTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24L MTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25L MTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26L MTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26L RTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22L RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23L RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24L RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25L RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single