Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - BYG20J M2G SK22A M2G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BYG20J M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO214AC	Active	Standard	600V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 600V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK22A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AC	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK23A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AC	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK24A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AC	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK25A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A DO214AC	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK26A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A DO214AC	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1DFSHMXG	Taiwan Semiconductor Corporation	DIODE FAST 1A 200V	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1GFSHMXG	Taiwan Semiconductor Corporation	DIODE FAST 1A 400V	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1JFSHMXG	Taiwan Semiconductor Corporation	DIODE FAST 1A 600V	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1KFSHMXG	Taiwan Semiconductor Corporation	DIODE FAST 1A 800V	Active	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1MFSHMXG	Taiwan Semiconductor Corporation	DIODE FAST 1A 1000V	Active	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
HT18G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	Active	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT18G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT18G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	Active	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT18G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	Active	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT18G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
LL4002G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A MELF	Active	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
UF1MHR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	Active	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
ES1HL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A SUB SMA	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF2L8GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SFT17GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
BYG21MHM2G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 1.5A DO214AC	Active	Avalanche	-	1.5A	1.6V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	1µA @ 1000V	13pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1HL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A SUB SMA	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1HL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A SUB SMA	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1HL MQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A SUB SMA	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1HL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A SUB SMA	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1HL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A SUB SMA	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JL MQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JL MTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
UF1MHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	Active	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
ES1JL RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1HL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A SUB SMA	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1HL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A SUB SMA	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
UF1MHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	Active	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF2L8GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SFT17GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SF2L8GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
UF1MHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	Active	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RS2A M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AA	Active	Standard	50V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2B M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	Active	Standard	100V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2D M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2A R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AA	Active	Standard	50V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2B R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	Active	Standard	100V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2D R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SFT13G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A TS-1	Active	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single