Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SF2L4G B0G S1DLSHRVG - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SF2L4G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	Active	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
S1DLSHRVG	Taiwan Semiconductor Corporation	DIODE 1.2A 200V AEC-Q101 SOD	Active	Standard	200V	1.2A	1.3V @ 1.2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C
S1GLSHRVG	Taiwan Semiconductor Corporation	DIODE 1.2A 400V AEC-Q101 SOD	Active	Standard	400V	1.2A	1.3V @ 1.2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C
ES1BHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1CHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AC	Active	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1DHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1FHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO214AC	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1GHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS22LHRHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23LHRHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24LHRHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25LHRHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26LHRHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SRT19 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A TS-1	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS22LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22LHMQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22LHMTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23LHMQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24LHMQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25LHMQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25LHMTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26LHMQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26LHMTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22LHRUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25LHRUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SRT19 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A TS-1	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT11G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT12G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT12G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
S2K R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	Active	Standard	800V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
BYG20D M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	Active	Standard	200V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BYG20G M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	Active	Standard	400V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 400V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

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