Diodi - Raddrizzatori - Singoli - Dispositivi a semiconduttore discreti - LSIC2SD120C05 FFSD10120A FR6A02 JANTX1N3595-1 - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
LSIC2SD120C05	Littelfuse Inc.	DIODE SCHOTTKY 1.2KV 18.1A TO252	Active	Silicon Carbide Schottky	1200V	18.1A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	310pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-55°C ~ 175°C
FFSD10120A	ON Semiconductor	DIODE SCHOTTKY 1.2KV TO252	Active	Silicon Carbide Schottky	1200V	-	1.75V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	612pF @ 1V, 100kHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-
FR6A02	GeneSiC Semiconductor	DIODE GEN PURP 50V 6A DO4	Active	Standard	50V	6A	1.4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
JANTX1N3595-1	Microsemi Corporation	DIODE GEN PURP 125V 150MA DO35	Active	Standard	125V	150mA	920mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JAN1N5617	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
GP2D012A060A	Global Power Technologies Group	DIODE SCHOTTKY 600V 12A TO220-2	Active	Silicon Carbide Schottky	600V	12A	1.65V @ 12A	No Recovery Time > 500mA (Io)	0ns	40µA @ 600V	632pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
C2D05120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 5A TO220-2	Obsolete	Silicon Carbide Schottky	1200V	17.5A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	455pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
JAN1N5614	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JAN1N5616	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
GP2D012A065C	Global Power Technologies Group	DIODE SCHOTTKY 650V 29A TO252-2	Active	Silicon Carbide Schottky	650V	29A (DC)	1.9V @ 12A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	632pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
JANTX1N4246	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N3611	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5615	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	45pF @ 12V, 1MHz	Through Hole	A, Axial	A-PAK	-65°C ~ 175°C
SCS215AJHRTLL	Rohm Semiconductor	DIODE SCHOTTKY 650V 15A TO263AB	Active	Silicon Carbide Schottky	650V	15A (DC)	1.55V @ 15A	No Recovery Time > 500mA (Io)	0ns	300µA @ 600V	550pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	175°C (Max)
JANTX1N5619	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N4942	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
FMCA-22065	Sanken	DIODE SCHOTTKY 600V 20A TO220-2	Obsolete	Silicon Carbide Schottky	600V	20A	1.5V @ 10A	No Recovery Time > 500mA (Io)	0ns	15mA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F	-40°C ~ 175°C
FR70GR02	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 70A DO5	Active	Standard, Reverse Polarity	400V	70A	1.4V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
FR30GR02	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 30A DO5	Active	Standard, Reverse Polarity	400V	30A	1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
FR30G02	GeneSiC Semiconductor	DIODE GEN PURP 400V 30A DO5	Active	Standard	400V	30A	1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
GP2D010A120A	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 10A TO220-2	Active	Silicon Carbide Schottky	1200V	10A	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	20µA @ 1200V	635pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
APT10SCD120K	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 10A TO220	Obsolete	Silicon Carbide Schottky	1200V	10A	1.5V @ 10A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-220-2	TO-220	-
JANTX1N4153-1	Microsemi Corporation	DIODE GEN PURP 50V 150MA DO204AH	Active	Standard	50V	150mA	880mV @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 175°C
FFSP20120A	ON Semiconductor	DIODE SCHOTTKY 1.2KV 20A TO220-2	Active	Silicon Carbide Schottky	1200V	20A	1.75V @ 20A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	1220pF @ 1V, 100KHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
JANTX1N5617	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5418	Microsemi Corporation	DIODE GEN PURP 400V 3A AXIAL	Active	Standard	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
MUR5010R	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 50A DO5	Active	Standard, Reverse Polarity	100V	50A	1V @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 150°C
SCS220AJHRTLL	Rohm Semiconductor	DIODE SCHOTTKY 650V 20A TO263AB	Active	Silicon Carbide Schottky	650V	20A (DC)	1.55V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 600V	730pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	175°C (Max)
1N5811TR	Microsemi Corporation	DIODE GEN PURP 150V 6A AXIAL	Active	Standard	150V	6A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
LSIC2SD120C10	Littelfuse Inc.	DIODE SCHOTTKY 1.2KV 33A TO252	Active	Silicon Carbide Schottky	1200V	33A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	582pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-55°C ~ 175°C
FR85GR02	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 85A DO5	Active	Standard, Reverse Polarity	400V	85A	1.4V @ 85A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
JANTX1N5416	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Active	Standard	100V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
GP2D030A060B	Global Power Technologies Group	DIODE SCHOTTKY 600V 30A TO247-2	Obsolete	Silicon Carbide Schottky	600V	30A (DC)	1.65V @ 30A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	1581pF @ 1V, 1MHZ	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
JAN1N5420	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	1µA @ 600V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
JANTX1N5616US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
1N6622	Microsemi Corporation	DIODE GEN PURP 600V 1.2A AXIAL	Active	Standard	600V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	500nA @ 600V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 150°C
JANTX1N5806	Microsemi Corporation	DIODE GEN PURP 150V 1A AXIAL	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5614US	Microsemi Corporation	DIODE GEN PURP 200V 1A D5A	Active	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JAN1N5819UR-1	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO213AB	Active	Schottky	45V	1A	490mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	70pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB (MELF, LL41)	-65°C ~ 125°C
JANTXV1N5614US	Microsemi Corporation	DIODE GEN PURP 200V 1A D5A	Active	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JANTX1N5811US	Microsemi Corporation	DIODE GEN PURP 150V 3A B-MELF	Active	Standard	150V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JANTX1N5711UR-1	Microsemi Corporation	DIODE SCHOTTKY 70V 33MA DO213AA	Active	Schottky	70V	33mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 100V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
JANTX1N5819-1	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO204AL	Active	Schottky	45V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	70pF @ 5V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 125°C
JANTXV1N5616	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JANTXV1N5617	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5806US	Microsemi Corporation	DIODE GEN PURP 150V 1A D5A	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANTX1N5190	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	2µA @ 600V	-	Through Hole	B, Axial	-	-
JANTX1N3644	Microsemi Corporation	DIODE GP 1.5KV 250MA S AXIAL	Active	Standard	1500V	250mA	5V @ 250mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 1500V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
JANTX1N6626US	Microsemi Corporation	DIODE GEN PURP 200V 1.75A D5B	Discontinued at -	Standard	200V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	2µA @ 200V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
GP2D020A120A	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 20A TO220-2	Active	Silicon Carbide Schottky	1200V	20A (DC)	1.8V @ 20A	No Recovery Time > 500mA (Io)	0ns	40µA @ 1200V	1270pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C

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