Diodi - Raddrizzatori - Singoli - Dispositivi a semiconduttore discreti - STPSC5H12B-TR1 VS-19TQ015PBF GP2D006A060C STTH1512GY-TR - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
STPSC5H12B-TR1	STMicroelectronics	DIODE SCHOTTKY 1.2KV 5A DPAK	Active	Silicon Carbide Schottky	1200V	5A	1.5V @ 5A	No Recovery Time > 500mA (Io)	0ns	30µA @ 1200V	450pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-40°C ~ 175°C
VS-19TQ015PBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15V 19A TO220AC	Discontinued at -	Schottky	15V	19A	360mV @ 19A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 15V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
GP2D006A060C	Global Power Technologies Group	DIODE SCHOTTKY 600V 6A TO252-2	Active	Silicon Carbide Schottky	600V	6A (DC)	1.65V @ 6A	No Recovery Time > 500mA (Io)	0ns	20µA @ 600V	316pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2L (DPAK)	-55°C ~ 175°C
STTH1512GY-TR	STMicroelectronics	DIODE GEN PURP 1.2KV 15A D2PAK	Active	Standard	1200V	15A	1.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	105ns	15µA @ 1200V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
VS-HFA15TB60PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220AC	Discontinued at -	Standard	600V	15A	1.7V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
UPS835L/TR13	Microsemi Corporation	DIODE SCHOTTKY 35V 8A POWERMITE3	Active	Schottky	35V	8A	510mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.4mA @ 35V	-	Surface Mount	Powermite®3	Powermite 3	-55°C ~ 125°C
VS-20ETF10PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 20A TO220FP	Discontinued at -	Standard	1000V	20A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 1000V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
VS-8EWF12STR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 8A D-PAK	Active	Standard	1200V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	270ns	100µA @ 1200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
UPS840/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 8A POWERMITE	Active	Schottky	40V	8A	450mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
STPSC6H12B-TR1	STMicroelectronics	DIODE SCHOTTKY 1.2KV 6A DPAK	Active	Silicon Carbide Schottky	1200V	6A	1.9V @ 6A	No Recovery Time > 500mA (Io)	0ns	400µA @ 1200V	330pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-40°C ~ 175°C
STTH30R04WY	STMicroelectronics	DIODE GEN PURP 400V 30A DO247	Active	Standard	400V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	15µA @ 400V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
VS-15TQ060SPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 15A D2PAK	Discontinued at -	Schottky	60V	15A	620mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 60V	720pF @ 5V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
1N4454UR-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO213AA	Active	Standard	50V	200mA (DC)	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	-	Surface Mount	DO-213AA	DO-213AA	-55°C ~ 175°C
STTH30S06W	STMicroelectronics	DIODE GEN PURP 600V 30A DO247-2	Obsolete	Standard	600V	30A	3.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	-	-40°C ~ 175°C
VS-20ETF12PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 20A TO220AC	Discontinued at -	Standard	1200V	20A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
GP2D006A060A	Global Power Technologies Group	DIODE SCHOTTKY 600V 6A TO220-2	Active	Silicon Carbide Schottky	600V	6A (DC)	1.65V @ 6A	No Recovery Time > 500mA (Io)	0ns	20µA @ 600V	316pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
STPSC806G-TR	STMicroelectronics	DIODE SCHOTTKY 600V 8A D2PAK	Active	Silicon Carbide Schottky	600V	8A	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	450pF @ 0V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK	-40°C ~ 175°C
STTH3010D	STMicroelectronics	DIODE GEN PURP 1KV 30A TO220AC	Active	Standard	1000V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	15µA @ 1000V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
STTH8T06DI	STMicroelectronics	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	2.95V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 600V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	-40°C ~ 175°C
STPSC12C065DY	STMicroelectronics	DIODE SCHOTTKY 650V 12A TO220AC	Active	Schottky	650V	12A	1.75V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 650V	530pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
SCS208AJTLL	Rohm Semiconductor	DIODE SCHOTTKY 650V 8A TO263AB	Active	Silicon Carbide Schottky	650V	8A (DC)	1.55V @ 8A	No Recovery Time > 500mA (Io)	0ns	160µA @ 600V	291pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	175°C (Max)
GB02SLT12-252	GeneSiC Semiconductor	DIODE SIC SCHKY 1.2KV 2A TO252	Active	Silicon Carbide Schottky	1200V	5A (DC)	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	50µA @ 1200V	131pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	-55°C ~ 175°C
STPSC10H065GY-TR	STMicroelectronics	DIODE SCHTY SIC 650V 10A D2PAK	Active	Silicon Carbide Schottky	650V	10A	1.75V @ 10A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	480pF @ 0V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
FFSD1065A	ON Semiconductor	650V 10A SIC SBD	Active	Silicon Carbide Schottky	650V	18A (DC)	1.75V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	575pF @ 1V, 100kHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252)	-55°C ~ 175°C
FFH50US60S	ON Semiconductor	DIODE GEN PURP 600V 50A TO247	Active	Standard	600V	50A	1.54V @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	124ns	100µA @ 600V	-	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
SPV1001N30	STMicroelectronics	DIODE GEN PURP 30V 12.5A 8PQFN	Obsolete	Standard	30V	12.5A	850mV @ 5A	-	-	1µA @ 30V	-	Surface Mount	8-PowerVDFN	8-PQFN (5x6)	-45°C ~ 150°C
RHRG5060-F085	ON Semiconductor	DIODE GEN PURP 600V 50A TO247	Active	Standard	600V	50A	2.1V @ 50A	Standard Recovery >500ns, > 200mA (Io)	60ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
JAN1N4454UR-1	Microsemi Corporation	DIODE GEN PURP 50V 4A DO213AA	Active	Standard	50V	4A	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100nA @ 50V	-	Surface Mount	DO-213AA	DO-213AA	-55°C ~ 175°C
VS-HFA06TB120PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 6A TO220AC	Discontinued at -	Standard	1200V	6A	3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	5µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
STPSC12H065DY	STMicroelectronics	DIODE SCHOTTKY 650V 12A TO220AC	Active	Schottky	650V	12A	1.75V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 650V	600pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
JANTXV1N4150-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO35	Active	Standard	50V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
STTH3002PI	STMicroelectronics	DIODE GEN PURP 200V 30A DOP3I	Active	Standard	200V	30A	1.05V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 200V	-	Through Hole	DOP3I-2 Insulated (Straight Leads)	DOP3I	175°C (Max)
VS-HFA06TB120SPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 6A D2PAK	Discontinued at -	Standard	1200V	6A (DC)	3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	5µA @ 1200V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
SCS210AJTLL	Rohm Semiconductor	DIODE SCHOTTKY 650V 10A TO263AB	Active	Silicon Carbide Schottky	650V	10A (DC)	1.55V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	365pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	175°C (Max)
VS-HFA25TB60SPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 25A D2PAK	Discontinued at -	Standard	600V	25A (DC)	1.7V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	20µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
VS-HFA08TB120PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 8A TO220AC	Discontinued at -	Standard	1200V	8A	3.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	95ns	10µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
1N5418C.TR	Semtech Corporation	DIODE GEN PURP 400V 4.5A AXIAL	Active	Standard	400V	4.5A	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	165pF @ 4V, 1MHz	Through Hole	Axial	Axial	-
1N5617C.TR	Semtech Corporation	DIODE GEN PURP 400V 2A AXIAL	Active	Standard	400V	2A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	27pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
1N5622C.TR	Semtech Corporation	DIODE GEN PURP 1KV 1A AXIAL	Active	Avalanche	1000V	2A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 1000V	23pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
1N4942C.TR	Semtech Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	27pF @ 5V, 1MHz	Through Hole	Axial	Axial	-
1N5417C.TR	Semtech Corporation	DIODE GEN PURP 200V 4.5A AXIAL	Active	Standard	200V	4.5A	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	250pF @ 4V, 1MHz	Through Hole	Axial	Axial	-
JAN1N4153-1	Microsemi Corporation	DIODE GEN PURP 75V 150MA DO35	Active	Standard	75V	150mA (DC)	880mV @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
STPSC10H12B-TR1	STMicroelectronics	DIODE SCHOTTKY 1.2KV 10A DPAK	Active	Silicon Carbide Schottky	1200V	10A	1.5V @ 10A	No Recovery Time > 500mA (Io)	0ns	60µA @ 1200V	725pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-40°C ~ 175°C
STPSC10H12GY-TR	STMicroelectronics	DIODE SCHOTTKY 1.2KV 10A D2PAK	Active	Silicon Carbide Schottky	1200V	10A	1.5V @ 10A	No Recovery Time > 500mA (Io)	0ns	60µA @ 1200V	725pF @ 0V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK	-40°C ~ 175°C
SCS208AJHRTLL	Rohm Semiconductor	DIODE SCHOTTKY 650V 8A TO263AB	Active	Silicon Carbide Schottky	650V	8A (DC)	1.55V @ 8A	No Recovery Time > 500mA (Io)	0ns	160µA @ 600V	291pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	175°C (Max)
1N5550C.TR	Semtech Corporation	DIODE GEN PURP 200V 3A AXIAL	Active	Standard	200V	5A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 200V	92pF @ 5V, 1MHz	Through Hole	Axial	Axial	-
1N5553C.TR	Semtech Corporation	DIODE GEN PURP 800V 3A AXIAL	Active	Standard	800V	5A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 800V	92pF @ 5V, 1MHz	Through Hole	Axial	Axial	-
1N5554C.TR	Semtech Corporation	DIODE GEN PURP 1KV 5A AXIAL	Active	Standard	1000V	5A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 1000V	92pF @ 5V, 1MHz	Through Hole	Axial	Axial	-
1N5552C.TR	Semtech Corporation	DIODE GEN PURP 600V 5A AXIAL	Active	Standard	600V	5A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 600V	92pF @ 5V, 1MHz	Through Hole	Axial	Axial	-
1N5551C.TR	Semtech Corporation	DIODE GEN PURP 400V 3A AXIAL	Active	Standard	400V	5A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	92pF @ 5V, 1MHz	Through Hole	Axial	Axial	-

Produttori per Diodi - Raddrizzatori - Singoli