Numero di parte Produttore / Marca Breve descrizione Stato parteTipo diodoTensione - DC Reverse (Vr) (Max)Corrente - Rettificato medio (Io)Voltage - Forward (Vf) (Max) @ IfVelocitàTempo di recupero inverso (trr)Corrente - Perdita inversa @ VrCapacità @ Vr, FTipo di montaggioPacchetto / casoPacchetto dispositivo fornitoreTemperatura operativa - Giunzione
Rohm Semiconductor SUPER FAST RECOVERY DIODE AEC-Q ActiveStandard350V5A1.5V @ 5AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 350V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252150°C (Max)
STMicroelectronics DIODE GEN PURP 1KV 8A D2PAK ActiveStandard1000V8A2V @ 8AFast Recovery =< 500ns, > 200mA (Io)85ns5µA @ 1000V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK-40°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 200V 4A SMC ActiveSchottky200V4A860mV @ 4AFast Recovery =< 500ns, > 200mA (Io)35ns1mA @ 200V
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Surface MountDO-214AB, SMCSMC-55°C ~ 150°C
Comchip Technology DIODE SCHOTTKY 45V 10A SMC ActiveSchottky45V10A550mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 45V
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Surface MountZ5-TSMC (Z5-T)-55°C ~ 150°C
Central Semiconductor Corp DIODE GEN PURP 400V 1A GPR-1A ActiveStandard400V1A1.2V @ 1AFast Recovery =< 500ns, > 200mA (Io)
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5µA @ 400V15pF @ 4V, 1MHzThrough HoleSOD-88A, AxialGPR-1A-65°C ~ 175°C
Central Semiconductor Corp DIODE GEN PURP 600V 1A GPR-1A ActiveStandard600V1A1.2V @ 1AStandard Recovery >500ns, > 200mA (Io)
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5µA @ 600V15pF @ 4V, 1MHzThrough HoleSOD-88A, AxialGPR-1A-65°C ~ 175°C
Central Semiconductor Corp DIODE SCHOTTKY 60V 1A SMB ActiveSchottky60V1A700mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V80pF @ 4V, 1MHzSurface MountDO-214AA, SMBSMB-65°C ~ 150°C
Central Semiconductor Corp DIODE SCHOTTKY 30V 15A 3TLM ActiveSchottky30V15A560mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 30V920pF @ 4V, 1MHzSurface Mount3-SMD, Flat LeadsTLM364-55°C ~ 150°C
Rohm Semiconductor DIODE SCHOTTKY 30V 5A TO252 ActiveSchottky30V5A720mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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5µA @ 30V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252150°C (Max)
STMicroelectronics DIODE GEN PURP 600V 5A DPAK ActiveStandard600V5A3.2V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns30µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK175°C (Max)
Central Semiconductor Corp DIODE SCHOTTKY 40V 2A SMA ActiveSchottky40V2A550mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V150pF @ 4V, 1MHzSurface MountDO-214AC, SMASMA-65°C ~ 150°C
Central Semiconductor Corp DIODE GEN PURP 200V 3A SMC ActiveStandard200V3A1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 200V
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Surface MountDO-214AB, SMCSMC-65°C ~ 175°C
STMicroelectronics DIODE GEN PURP 600V 8A D2PAK ActiveStandard600V8A1.85V @ 8AFast Recovery =< 500ns, > 200mA (Io)55ns8µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK175°C (Max)
STMicroelectronics DIODE SCHOTTKY 25V 10A D2PAK ActiveSchottky25V10A460mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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800µA @ 25V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK150°C (Max)
Microsemi Corporation DIODE SCHOTTKY 45V 3A DO214AB ActiveSchottky45V3A520mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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1.5mA @ 45V
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Surface MountDO-214AB, SMCDO-214AB-55°C ~ 150°C
Littelfuse Inc. DIODE SCHOTTKY 60V PDFN5X6-8L ActiveSchottky60V30A770mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
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6mA @ 60V
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Surface Mount8-PowerVDFN8-PDFN (5x6)-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 15V 20A D2PAK Discontinued at -Schottky15V20A410mV @ 19AFast Recovery =< 500ns, > 200mA (Io)
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10mA @ 15V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-55°C ~ 125°C
STMicroelectronics DIODE GEN PURP 1KV 8A TO220FP ActiveStandard1000V8A2V @ 8AFast Recovery =< 500ns, > 200mA (Io)85ns5µA @ 1000V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FPAC175°C (Max)
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 80V 8A D2PAK Discontinued at -Schottky80V8A720mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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550µA @ 80V500pF @ 5V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-55°C ~ 175°C
STMicroelectronics DIODE GEN PURP 1KV 8A D2PAK ActiveStandard1000V8A2V @ 8AFast Recovery =< 500ns, > 200mA (Io)85ns5µA @ 1000V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK175°C (Max)
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 35V 16A D2PAK Discontinued at -Schottky35V16A630mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 35V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-65°C ~ 150°C
Central Semiconductor Corp DIODE GEN PURP 1000V 3A SMC ActiveStandard1000V3A2V @ 3AFast Recovery =< 500ns, > 200mA (Io)100ns5µA @ 1000V
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Surface MountDO-214AB, SMCSMC-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 100V 8A D2PAK Discontinued at -Schottky100V8A720mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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550µA @ 100V500pF @ 5V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-55°C ~ 175°C
STMicroelectronics DIODE GEN PURP 600V 15A TO220AC ActiveStandard600V15A2.9V @ 15AFast Recovery =< 500ns, > 200mA (Io)50ns60µA @ 600V
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Through HoleTO-220-2TO-220AC175°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 30A TO247-2 ActiveStandard600V30A2.75V @ 30AFast Recovery =< 500ns, > 200mA (Io)22ns10µA @ 600V
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Through HoleTO-247-2TO-247-2175°C (Max)
STMicroelectronics DIODE SCHOTTKY 30V 30A POWERFLAT ActiveSchottky30V30A510mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
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750µA @ 30V
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Surface Mount8-PowerVDFNPowerFlat™ (5x6)150°C (Max)
Central Semiconductor Corp DIODE GEN PURP 200V 8A D2PAK ActiveStandard200V8A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)25ns5µA @ 200V80pF @ 4V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-65°C ~ 150°C
Global Power Technologies Group DIODE SCHOTTKY 600V 3A TO220-2 ActiveSilicon Carbide Schottky600V3A (DC)1.65V @ 3ANo Recovery Time > 500mA (Io)0ns10µA @ 600V158pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 50V 200MA DO35 ActiveStandard50V200mA1V @ 200mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 50V
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Through HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
STMicroelectronics DIODE SCHOTTKY 1.2KV 5A DPAK ActiveSilicon Carbide Schottky1200V5A1.5V @ 2ANo Recovery Time > 500mA (Io)0ns12µA @ 1200V190pF @ 0V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-40°C ~ 175°C
Central Semiconductor Corp DIODE GEN PURP 200V 3A SMC ActiveStandard200V3A1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 200V
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Surface MountDO-214AB, SMCSMC-65°C ~ 175°C
STMicroelectronics DIODE SCHOTTKY 100V 30A D2PAK ActiveSchottky100V30A870mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
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45µA @ 100V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK150°C (Max)
ON Semiconductor DIODE GEN PURP 600V 15A TO263-2 ActiveStandard600V15A2.2V @ 15AFast Recovery =< 500ns, > 200mA (Io)40ns100µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263 (D²Pak)-55°C ~ 175°C
IXYS DIODE GEN PURP 1.6KV 30A TO263 ActiveStandard1600V30A1.29V @ 30AStandard Recovery >500ns, > 200mA (Io)
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40µA @ 1600V10pF @ 400V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-40°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 45V 6A TO220AC Discontinued at -Schottky45V6A600mV @ 6AFast Recovery =< 500ns, > 200mA (Io)
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800µA @ 45V
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Through HoleTO-220-2TO-220AC-55°C ~ 175°C
Rohm Semiconductor DIODE GEN PURP 600V 20A LPDS Not For New DesignsStandard600V20A2.8V @ 20AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABLPDS150°C (Max)
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 15V 20A D2PAK Discontinued at -Schottky15V20A410mV @ 19AFast Recovery =< 500ns, > 200mA (Io)
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10mA @ 15V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-55°C ~ 125°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 20A TO220FP ObsoleteStandard1200V20A1.1V @ 20AStandard Recovery >500ns, > 200mA (Io)
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100µA @ 1200V
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Through HoleTO-220-2 Full PackTO-220AC Full Pack-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 20A TO220FP ObsoleteStandard800V20A1.1V @ 20AStandard Recovery >500ns, > 200mA (Io)
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100µA @ 800V
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Through HoleTO-220-2 Full PackTO-220AC Full Pack-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 45V 16A D2PAK Discontinued at -Schottky45V16A630mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 45V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-65°C ~ 150°C
STMicroelectronics DIODE GEN PURP 600V 30A DO247 ActiveStandard600V30A3.6V @ 30AFast Recovery =< 500ns, > 200mA (Io)50ns50µA @ 600V
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Through HoleDO-247-2 (Straight Leads)DO-247-40°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 10A TO220AC Discontinued at -Standard600V10A1.2V @ 10AFast Recovery =< 500ns, > 200mA (Io)200ns
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Through HoleTO-220-2TO-220AC-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 10A TO220FP ObsoleteStandard1200V10A1.33V @ 10AFast Recovery =< 500ns, > 200mA (Io)310ns
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Through HoleTO-220-2 Full PackTO-220AC Full Pack-40°C ~ 150°C
STMicroelectronics DIODE SCHOTTKY 650V 8A DPAK ActiveSilicon Carbide Schottky650V8A1.75V @ 8ANo Recovery Time > 500mA (Io)0ns80µA @ 650V414pF @ 0V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-40°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 10A TO220AC Discontinued at -Standard1200V10A1.33V @ 10AFast Recovery =< 500ns, > 200mA (Io)310ns
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Through HoleTO-220-2TO-220AC-40°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 30A TO247-2 ActiveStandard600V30A2.1V @ 30AFast Recovery =< 500ns, > 200mA (Io)45ns250µA @ 600V
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Through HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 6A TO252-2 ActiveSilicon Carbide Schottky650V6A (DC)1.65V @ 6ANo Recovery Time > 500mA (Io)0ns60µA @ 650V316pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-2L (DPAK)-55°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 20A TO220FP ObsoleteStandard600V20A1.3V @ 20AFast Recovery =< 500ns, > 200mA (Io)160ns100µA @ 600V
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Through HoleTO-220-2 Full PackTO-220AC Full Pack-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 45V 6A D2PAK Discontinued at -Schottky45V6A600mV @ 6AFast Recovery =< 500ns, > 200mA (Io)
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800µA @ 45V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-55°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 8A D-PAK ActiveStandard800V8A1.1V @ 8AStandard Recovery >500ns, > 200mA (Io)
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50µA @ 800V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-PAK (TO-252AA)-55°C ~ 150°C