Numero di parte Produttore / Marca Breve descrizione Stato parteTipo diodoTensione - DC Reverse (Vr) (Max)Corrente - Rettificato medio (Io)Voltage - Forward (Vf) (Max) @ IfVelocitàTempo di recupero inverso (trr)Corrente - Perdita inversa @ VrCapacità @ Vr, FTipo di montaggioPacchetto / casoPacchetto dispositivo fornitoreTemperatura operativa - Giunzione
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 15A TO220FP ActiveStandard600V15A1.07V @ 15AFast Recovery =< 500ns, > 200mA (Io)210ns15µA @ 600V
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Through HoleTO-220-2 Full PackTO-220-2 Full Pack-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 100V 30A ITO220AB ActiveSchottky100V30A1V @ 30AFast Recovery =< 500ns, > 200mA (Io)
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350µA @ 100V
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Through HoleTO-220-3 Full Pack, Isolated TabITO-220AB-40°C ~ 150°C
Littelfuse Inc. DIODE SCHOTTKY 30A 100V ITO220AB ActiveSchottky100V30A900mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
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1µA @ 100V
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Through HoleTO-220-3 Isolated TabITO-220AB-55°C ~ 150°C
STMicroelectronics DIODE GEN PURP 600V 8A TO220FP ActiveStandard600V8A1.3V @ 8AFast Recovery =< 500ns, > 200mA (Io)105ns8µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FPAC175°C (Max)
Microsemi Corporation DIODE GEN PURP 600V 15A TO220 ActiveStandard600V15A2.4V @ 15AFast Recovery =< 500ns, > 200mA (Io)19ns25µA @ 600V
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Through HoleTO-220-2TO-220 [K]-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 3A TO220-2 ActiveSilicon Carbide Schottky650V3A (DC)1.65V @ 3ANo Recovery Time > 500mA (Io)0ns30µA @ 650V158pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
STMicroelectronics DIODE SCHOTTKY 100V 20A TO220AB ActiveSchottky100V20A900mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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30µA @ 100V
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Through HoleTO-220-3TO-220AB150°C (Max)
STMicroelectronics DIODE GEN PURP 1.2KV 15A DO247 ActiveStandard1200V15A3.1V @ 15AFast Recovery =< 500ns, > 200mA (Io)40ns10µA @ 1200V
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Through HoleDO-247-2 (Straight Leads)DO-247175°C (Max)
Rohm Semiconductor DIODE GEN PURP 300V 20A TO220NFM Not For New DesignsStandard300V20A
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Fast Recovery =< 500ns, > 200mA (Io)
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Through HoleTO-220-2 Full PackTO-220NFM150°C (Max)
SMC Diode Solutions DIODE GEN PURP 400V 30A TO247AC ActiveStandard400V30A1.41V @ 30AFast Recovery =< 500ns, > 200mA (Io)45ns5µA @ 400V
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Through HoleTO-247-2TO-247AC-55°C ~ 150°C
STMicroelectronics DIODE GEN PURP 600V 8A TO220FP ActiveStandard600V8A3.4V @ 8AFast Recovery =< 500ns, > 200mA (Io)18ns20µA @ 600V
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Through HoleTO-220-2 Full PackTO-220FPAC175°C (Max)
IXYS DIODE SCHOTTKY 15V 20A TO220AC ActiveSchottky15V20A450mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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10mA @ 15V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
IXYS DIODE GEN PURP 600V 14A TO220AC ActiveStandard600V14A1.7V @ 16AFast Recovery =< 500ns, > 200mA (Io)50ns50µA @ 600V
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Through HoleTO-220-2TO-220AC-40°C ~ 150°C
IXYS DIODE GEN PURP 1.2KV 10A TO220AC ActiveStandard1200V10A2.94V @ 10AFast Recovery =< 500ns, > 200mA (Io)40ns60µA @ 1200V
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Through HoleTO-220-2TO-220AC-55°C ~ 175°C
IXYS DIODE GEN PURP 1KV 12A TO220AC ActiveStandard1000V12A2.7V @ 12AFast Recovery =< 500ns, > 200mA (Io)60ns250µA @ 1000V
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Through HoleTO-220-2TO-220AC-40°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 15A TO220AC ActiveStandard600V15A2.2V @ 15AFast Recovery =< 500ns, > 200mA (Io)40ns100µA @ 600V
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Through HoleTO-220-2TO-220AC-55°C ~ 175°C
Rohm Semiconductor DIODE GP 600V 20A TO220ACFP ActiveStandard600V20A1.3V @ 20AFast Recovery =< 500ns, > 200mA (Io)180ns10µA @ 600V
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Through HoleTO-220-2 Full PackTO-220ACFP150°C (Max)
Rohm Semiconductor DIODE GEN PURP 400V 20A TO220FN Not For New DesignsStandard400V20A1.6V @ 20AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 400V
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Through HoleTO-220-3 Full PackTO-220FN150°C (Max)
STMicroelectronics DIODE SCHOTTKY 100V 30A TO220AB ActiveSchottky100V30A800mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
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175µA @ 100V
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Through HoleTO-220-3TO-220AB150°C (Max)
Microsemi Corporation DIODE GEN PURP 600V 15A TO220 ActiveStandard600V15A1.8V @ 15AFast Recovery =< 500ns, > 200mA (Io)80ns250µA @ 600V
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Through HoleTO-220-2TO-220 [K]-55°C ~ 175°C
Infineon Technologies DIODE GEN PURP 650V 28A TO220-2 ActiveStandard650V28A (DC)1.7V @ 20AFast Recovery =< 500ns, > 200mA (Io)42ns40µA @ 650V
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Through HoleTO-220-2 Full PackPG-TO220-2 Full Pack-40°C ~ 175°C
Rohm Semiconductor DIODE GEN PURP 530V 20A TO220NFM Not For New DesignsStandard530V20A2V @ 20AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 530V
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Through HoleTO-220-3 Full PackTO-220NFM150°C (Max)
Microsemi Corporation DIODE GEN PURP 50V 200MA DO35 ActiveStandard50V200mA1V @ 200mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 50V
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Through HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
Cree/Wolfspeed DIODE SCHOTTKY 650V 4A TO220-2 ActiveSilicon Carbide Schottky650V13.5A (DC)1.8V @ 4ANo Recovery Time > 500mA (Io)0ns60µA @ 650V251pF @ 0V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Infineon Technologies DIODE GEN PURP 650V 30A TO220-2 ActiveStandard650V30A (DC)2.2V @ 30AFast Recovery =< 500ns, > 200mA (Io)42ns40µA @ 650V
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Through HoleTO-220-2 Full PackPG-TO220-2 Full Pack-40°C ~ 175°C
Littelfuse Inc. DIODE GEN PURP 600V 9.5A TO220 ActiveStandard600V9.5A1.6V @ 9.5AStandard Recovery >500ns, > 200mA (Io)4µs10µA @ 600V
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Through HoleTO-220-3 Isolated TabTO-220 Isolated Tab-40°C ~ 125°C
IXYS DIODE GEN PURP 1.2KV 10A TO220FP ActiveStandard1200V10A2.69V @ 10AFast Recovery =< 500ns, > 200mA (Io)75ns15µA @ 1200V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FPAC-55°C ~ 150°C
SMC Diode Solutions DIODE GEN PURP 300V 60A TO247AC ActiveStandard300V60A1.4V @ 60AFast Recovery =< 500ns, > 200mA (Io)45ns10µA @ 300V
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Through HoleTO-247-2TO-247AC-55°C ~ 150°C
STMicroelectronics DIODE GEN PURP 600V 12A TO220FP ActiveStandard600V12A2.9V @ 12AFast Recovery =< 500ns, > 200mA (Io)45ns45µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FPAC175°C (Max)
Microsemi Corporation DIODE GEN PURP 50V 150MA DO35 ActiveStandard50V150mA880mV @ 20mASmall Signal =< 200mA (Io), Any Speed4ns50nA @ 50V
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Through HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 50V 200MA DO213AA ActiveStandard50V200mA1V @ 200mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 50V
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Surface MountDO-213AA (Glass)DO-213AA-65°C ~ 175°C
IXYS DIODE GEN PURP 1.2KV 15A TO220AC ActiveStandard1200V15A2.75V @ 15AFast Recovery =< 500ns, > 200mA (Io)40ns100µA @ 1200V
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Through HoleTO-220-2TO-220AC-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 200V 20A TO220AC ActiveStandard200V20A1.1V @ 20AFast Recovery =< 500ns, > 200mA (Io)95ns50µA @ 200V
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Through HoleTO-220-2TO-220AC-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 15V 25A TO220-2 ActiveSchottky15V25A450mV @ 25AFast Recovery =< 500ns, > 200mA (Io)
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15mA @ 15V
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Through HoleTO-220-2TO-220-2-65°C ~ 125°C
STMicroelectronics DIODE GEN PURP 1.2KV 12A TO220AC ActiveStandard1200V12A2.2V @ 12AFast Recovery =< 500ns, > 200mA (Io)100ns10µA @ 1200V
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Through HoleTO-220-2TO-220AC175°C (Max)
STMicroelectronics DIODE GEN PURP 200V 20A TO220AC ActiveStandard200V20A1.1V @ 20AFast Recovery =< 500ns, > 200mA (Io)40ns10µA @ 200V
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Through HoleTO-220-2TO-220AC175°C (Max)
IXYS DIODE GEN PURP 1.2KV 30A TO263 ActiveStandard1200V30A1.29V @ 30AStandard Recovery >500ns, > 200mA (Io)
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40µA @ 1200V10pF @ 400V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-40°C ~ 175°C
Littelfuse Inc. DIODE GEN PURP 600V 15.9A TO220 ActiveStandard600V15.9A
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Standard Recovery >500ns, > 200mA (Io)4µs10µA @ 600V
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Through HoleTO-220-3 Isolated TabTO-220AB-L-40°C ~ 125°C
SMC Diode Solutions DIODE SCHOTTKY 150V TO247AD ActiveSchottky150V
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830mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V820pF @ 5V, 1MHzThrough HoleTO-247-3TO-247AD-55°C ~ 175°C
STMicroelectronics DIODE GEN PURP 1.2KV 30A DO247 ActiveStandard1200V30A2.25V @ 30AFast Recovery =< 500ns, > 200mA (Io)115ns20µA @ 1200V
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Through HoleDO-247-2 (Straight Leads)DO-247175°C (Max)
Infineon Technologies DIODE GEN PURP 650V 80A TO247-3 ActiveStandard650V80A2.3V @ 40AFast Recovery =< 500ns, > 200mA (Io)75ns40µA @ 650V
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Through HoleTO-247-3TO-247-3-40°C ~ 175°C
M/A-Com Technology Solutions DIODE GEN PURP 50V 300MA DO35 ActiveStandard50V300mA (DC)740mV @ 10mAFast Recovery =< 500ns, > 200mA (Io)4ns100nA @ 50V2.5pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 12A DO203AA ActiveStandard, Reverse Polarity200V12A1.26V @ 38AStandard Recovery >500ns, > 200mA (Io)
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12mA @ 200V
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Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA-65°C ~ 175°C
Rohm Semiconductor DIODE GEN PURP 600V 30A TO247 ActiveStandard600V30A1.55V @ 30AFast Recovery =< 500ns, > 200mA (Io)60ns10µA @ 600V
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Through HoleTO-247-3TO-247150°C (Max)
IXYS DIODE GP 1KV 30A ISOPLUS247 ActiveStandard1000V30A2.4V @ 36AFast Recovery =< 500ns, > 200mA (Io)50ns750µA @ 1000V
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Through HoleISOPLUS247™ISOPLUS247™-40°C ~ 150°C
Rohm Semiconductor DIODE SCHOTTKY 650V 8A TO220AC ActiveSilicon Carbide Schottky650V8A (DC)1.55V @ 8ANo Recovery Time > 500mA (Io)0ns160µA @ 600V291pF @ 1V, 1MHzThrough HoleTO-220-2TO-220AC175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 12A DO203AA ActiveStandard100V12A1.26V @ 38AStandard Recovery >500ns, > 200mA (Io)
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12mA @ 100V
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Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA-65°C ~ 175°C
IXYS DIODE GP 1.6KV 48A ISOPLUS247 ActiveStandard1600V48A1.18V @ 40AStandard Recovery >500ns, > 200mA (Io)
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3mA @ 1600V
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Through HoleISOPLUS247™ISOPLUS247™-40°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 12A DO203AA ActiveStandard400V12A1.35V @ 12AStandard Recovery >500ns, > 200mA (Io)
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1.5mA @ 400V
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Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA-65°C ~ 200°C
GeneSiC Semiconductor DIODE GEN PURP 600V 15A DO5 ActiveStandard600V15A1.5V @ 15AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 50V
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Chassis, Stud MountDO-203AB, DO-5, StudDO-5-65°C ~ 175°C