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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO220FP |
Active | Standard | 600V | 15A | 1.07V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 210ns | 15µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 30A ITO220AB |
Active | Schottky | 100V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 100V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -40°C ~ 150°C |
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Littelfuse Inc. |
DIODE SCHOTTKY 30A 100V ITO220AB |
Active | Schottky | 100V | 30A | 900mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 100V | - | Through Hole | TO-220-3 Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220FP |
Active | Standard | 600V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 8µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 600V 15A TO220 |
Active | Standard | 600V | 15A | 2.4V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 19ns | 25µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 650V 3A TO220-2 |
Active | Silicon Carbide Schottky | 650V | 3A (DC) | 1.65V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 158pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 100V 20A TO220AB |
Active | Schottky | 100V | 20A | 900mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 15A DO247 |
Active | Standard | 1200V | 15A | 3.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 300V 20A TO220NFM |
Not For New Designs | Standard | 300V | 20A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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SMC Diode Solutions |
DIODE GEN PURP 400V 30A TO247AC |
Active | Standard | 400V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 5µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220FP |
Active | Standard | 600V | 8A | 3.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 20µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FPAC | 175°C (Max) |
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IXYS |
DIODE SCHOTTKY 15V 20A TO220AC |
Active | Schottky | 15V | 20A | 450mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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IXYS |
DIODE GEN PURP 600V 14A TO220AC |
Active | Standard | 600V | 14A | 1.7V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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IXYS |
DIODE GEN PURP 1.2KV 10A TO220AC |
Active | Standard | 1200V | 10A | 2.94V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 60µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1KV 12A TO220AC |
Active | Standard | 1000V | 12A | 2.7V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 250µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 15A TO220AC |
Active | Standard | 600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Rohm Semiconductor |
DIODE GP 600V 20A TO220ACFP |
Active | Standard | 600V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 400V 20A TO220FN |
Not For New Designs | Standard | 400V | 20A | 1.6V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 400V | - | Through Hole | TO-220-3 Full Pack | TO-220FN | 150°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 100V 30A TO220AB |
Active | Schottky | 100V | 30A | 800mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 175µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | 150°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 600V 15A TO220 |
Active | Standard | 600V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 28A TO220-2 |
Active | Standard | 650V | 28A (DC) | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 40µA @ 650V | - | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -40°C ~ 175°C |
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Rohm Semiconductor |
DIODE GEN PURP 530V 20A TO220NFM |
Not For New Designs | Standard | 530V | 20A | 2V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 530V | - | Through Hole | TO-220-3 Full Pack | TO-220NFM | 150°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO35 |
Active | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 4A TO220-2 |
Active | Silicon Carbide Schottky | 650V | 13.5A (DC) | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 251pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 30A TO220-2 |
Active | Standard | 650V | 30A (DC) | 2.2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 40µA @ 650V | - | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -40°C ~ 175°C |
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Littelfuse Inc. |
DIODE GEN PURP 600V 9.5A TO220 |
Active | Standard | 600V | 9.5A | 1.6V @ 9.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 600V | - | Through Hole | TO-220-3 Isolated Tab | TO-220 Isolated Tab | -40°C ~ 125°C |
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IXYS |
DIODE GEN PURP 1.2KV 10A TO220FP |
Active | Standard | 1200V | 10A | 2.69V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 15µA @ 1200V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE GEN PURP 300V 60A TO247AC |
Active | Standard | 300V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 300V | - | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 12A TO220FP |
Active | Standard | 600V | 12A | 2.9V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 45µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 50V 150MA DO35 |
Active | Standard | 50V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO213AA |
Active | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.2KV 15A TO220AC |
Active | Standard | 1200V | 15A | 2.75V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 20A TO220AC |
Active | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 50µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 15V 25A TO220-2 |
Active | Schottky | 15V | 25A | 450mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15mA @ 15V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 125°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 12A TO220AC |
Active | Standard | 1200V | 12A | 2.2V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 20A TO220AC |
Active | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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IXYS |
DIODE GEN PURP 1.2KV 30A TO263 |
Active | Standard | 1200V | 30A | 1.29V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 1200V | 10pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 175°C |
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Littelfuse Inc. |
DIODE GEN PURP 600V 15.9A TO220 |
Active | Standard | 600V | 15.9A | - | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 600V | - | Through Hole | TO-220-3 Isolated Tab | TO-220AB-L | -40°C ~ 125°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 150V TO247AD |
Active | Schottky | 150V | - | 830mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | 820pF @ 5V, 1MHz | Through Hole | TO-247-3 | TO-247AD | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 30A DO247 |
Active | Standard | 1200V | 30A | 2.25V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 20µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 650V 80A TO247-3 |
Active | Standard | 650V | 80A | 2.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 40µA @ 650V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
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M/A-Com Technology Solutions |
DIODE GEN PURP 50V 300MA DO35 |
Active | Standard | 50V | 300mA (DC) | 740mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 12A DO203AA |
Active | Standard, Reverse Polarity | 200V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE GEN PURP 600V 30A TO247 |
Active | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-247-3 | TO-247 | 150°C (Max) |
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IXYS |
DIODE GP 1KV 30A ISOPLUS247 |
Active | Standard | 1000V | 30A | 2.4V @ 36A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 750µA @ 1000V | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ | -40°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 8A TO220AC |
Active | Silicon Carbide Schottky | 650V | 8A (DC) | 1.55V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 291pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 12A DO203AA |
Active | Standard | 100V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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IXYS |
DIODE GP 1.6KV 48A ISOPLUS247 |
Active | Standard | 1600V | 48A | 1.18V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 3mA @ 1600V | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 12A DO203AA |
Active | Standard | 400V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1.5mA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 600V 15A DO5 |
Active | Standard | 600V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |