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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 5A DPAK |
Active | Silicon Carbide Schottky | 1200V | 5A | 1.5V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 1200V | 450pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 19A TO220AC |
Discontinued at - | Schottky | 15V | 19A | 360mV @ 19A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 15V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO252-2 |
Active | Silicon Carbide Schottky | 600V | 6A (DC) | 1.65V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 600V | 316pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 15A D2PAK |
Active | Standard | 1200V | 15A | 1.9V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 15µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO220AC |
Discontinued at - | Standard | 600V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 35V 8A POWERMITE3 |
Active | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 20A TO220FP |
Discontinued at - | Standard | 1000V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A D-PAK |
Active | Standard | 1200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 8A POWERMITE |
Active | Schottky | 40V | 8A | 450mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 6A DPAK |
Active | Silicon Carbide Schottky | 1200V | 6A | 1.9V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 1200V | 330pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 400V 30A DO247 |
Active | Standard | 400V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 400V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 15A D2PAK |
Discontinued at - | Schottky | 60V | 15A | 620mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 60V | 720pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO213AA |
Active | Standard | 50V | 200mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A DO247-2 |
Obsolete | Standard | 600V | 30A | 3.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | - | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220AC |
Discontinued at - | Standard | 1200V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO220-2 |
Active | Silicon Carbide Schottky | 600V | 6A (DC) | 1.65V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 600V | 316pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 600V 8A D2PAK |
Active | Silicon Carbide Schottky | 600V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 450pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1KV 30A TO220AC |
Active | Standard | 1000V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
Active | Standard | 600V | 8A | 2.95V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 12A TO220AC |
Active | Schottky | 650V | 12A | 1.75V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 650V | 530pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 8A TO263AB |
Active | Silicon Carbide Schottky | 650V | 8A (DC) | 1.55V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 291pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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GeneSiC Semiconductor |
DIODE SIC SCHKY 1.2KV 2A TO252 |
Active | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 131pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHTY SIC 650V 10A D2PAK |
Active | Silicon Carbide Schottky | 650V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 480pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
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ON Semiconductor |
650V 10A SIC SBD |
Active | Silicon Carbide Schottky | 650V | 18A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 575pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 50A TO247 |
Active | Standard | 600V | 50A | 1.54V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 124ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 30V 12.5A 8PQFN |
Obsolete | Standard | 30V | 12.5A | 850mV @ 5A | - | - | 1µA @ 30V | - | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | -45°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 50A TO247 |
Active | Standard | 600V | 50A | 2.1V @ 50A | Standard Recovery >500ns, > 200mA (Io) | 60ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 4A DO213AA |
Active | Standard | 50V | 4A | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 6A TO220AC |
Discontinued at - | Standard | 1200V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 5µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 12A TO220AC |
Active | Schottky | 650V | 12A | 1.75V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 650V | 600pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO35 |
Active | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 200V 30A DOP3I |
Active | Standard | 200V | 30A | 1.05V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 200V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 6A D2PAK |
Discontinued at - | Standard | 1200V | 6A (DC) | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 5µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 10A TO263AB |
Active | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A D2PAK |
Discontinued at - | Standard | 600V | 25A (DC) | 1.7V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO220AC |
Discontinued at - | Standard | 1200V | 8A | 3.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 10µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Semtech Corporation |
DIODE GEN PURP 400V 4.5A AXIAL |
Active | Standard | 400V | 4.5A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | 165pF @ 4V, 1MHz | Through Hole | Axial | Axial | - |
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Semtech Corporation |
DIODE GEN PURP 400V 2A AXIAL |
Active | Standard | 400V | 2A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 27pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
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Semtech Corporation |
DIODE GEN PURP 1KV 1A AXIAL |
Active | Avalanche | 1000V | 2A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | 23pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
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Semtech Corporation |
DIODE GEN PURP 200V 1A AXIAL |
Active | Standard | 200V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 27pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
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Semtech Corporation |
DIODE GEN PURP 200V 4.5A AXIAL |
Active | Standard | 200V | 4.5A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | 250pF @ 4V, 1MHz | Through Hole | Axial | Axial | - |
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Microsemi Corporation |
DIODE GEN PURP 75V 150MA DO35 |
Active | Standard | 75V | 150mA (DC) | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 10A DPAK |
Active | Silicon Carbide Schottky | 1200V | 10A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1200V | 725pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 10A D2PAK |
Active | Silicon Carbide Schottky | 1200V | 10A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1200V | 725pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 8A TO263AB |
Active | Silicon Carbide Schottky | 650V | 8A (DC) | 1.55V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 291pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Semtech Corporation |
DIODE GEN PURP 200V 3A AXIAL |
Active | Standard | 200V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
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Semtech Corporation |
DIODE GEN PURP 800V 3A AXIAL |
Active | Standard | 800V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
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Semtech Corporation |
DIODE GEN PURP 1KV 5A AXIAL |
Active | Standard | 1000V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
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Semtech Corporation |
DIODE GEN PURP 600V 5A AXIAL |
Active | Standard | 600V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
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Semtech Corporation |
DIODE GEN PURP 400V 3A AXIAL |
Active | Standard | 400V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
