Numero di parte Produttore / Marca Breve descrizione Stato parteTipo diodoTensione - DC Reverse (Vr) (Max)Corrente - Rettificato medio (Io)Voltage - Forward (Vf) (Max) @ IfVelocitàTempo di recupero inverso (trr)Corrente - Perdita inversa @ VrCapacità @ Vr, FTipo di montaggioPacchetto / casoPacchetto dispositivo fornitoreTemperatura operativa - Giunzione
Rohm Semiconductor SUPER FAST RECOVERY DIODES ActiveStandard200V3A930mV @ 3AFast Recovery =< 500ns, > 200mA (Io)25ns10µA @ 200V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 5A DPAK ActiveStandard600V5A1.9V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns50µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK150°C (Max)
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 100V 5.5A DPAK ActiveSchottky100V5.5A770mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 100V183pF @ 5V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-PAK (TO-252AA)-40°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 20V 3A DPAK ActiveSchottky20V3A600mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 20V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 150°C
Diodes Incorporated DIODE SBR 80V 20A POWERDI5 ActiveSuper Barrier80V20A660mV @ 20AStandard Recovery >500ns, > 200mA (Io)
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200µA @ 80V
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Surface MountPowerDI™ 5PowerDI®5-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 8A 60V DO-214AB ActiveSchottky60V8A750mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 8A DO214AB Not For New DesignsSchottky60V8A750mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 15A TO277A ActiveSchottky200V15A890mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 200V
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Surface MountTO-277, 3-PowerDFNTO-277A (SMPC)-55°C ~ 150°C
Central Semiconductor Corp DIODE GEN PURP 1KV 1A SMB ActiveStandard1000V1A1.1V @ 1AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 1000V
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Surface MountDO-214AA, SMBSMB-60°C ~ 175°C
Central Semiconductor Corp DIODE GEN PURP 100V 1A SMB ActiveStandard100V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 100V10pF @ 4V, 1MHzSurface MountDO-214AA, SMBSMB-65°C ~ 175°C
Sanken DIODE SCHOTTKY 40V 3A AXIAL ObsoleteSchottky40V3A550mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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5mA @ 40V
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Through HoleAxial
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-40°C ~ 150°C
Central Semiconductor Corp DIODE GEN PURP 600V 1A SMB ActiveStandard600V1A1.1V @ 1AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 600V8pF @ 4V, 1MHzSurface MountDO-214AA, SMBSMB-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 20V 3A DPAK ActiveSchottky20V3A600mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 20V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 150°C
Sanken DIODE GEN PURP 800V 1.2A AXIAL ObsoleteStandard800V1.2A920mV @ 1.5AStandard Recovery >500ns, > 200mA (Io)18µs10µA @ 800V
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Through HoleAxialAxial-40°C ~ 150°C
STMicroelectronics DIODE SCHOTTKY 40V 3A SMC ActiveSchottky40V3A630mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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20µA @ 40V
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Surface MountDO-214AB, SMCSMC-40°C ~ 150°C
Diodes Incorporated DIODE SCHOTTKY 80V 1A SMA ActiveSchottky80V1A790mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 80V80pF @ 4V, 1MHzSurface MountDO-214AC, SMASMA-65°C ~ 150°C
Diodes Incorporated DIODE SBR 45V 8A POWERDI5 ActiveSuper Barrier45V8A600mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 45V
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Surface MountPowerDI™ 5PowerDI™ 5-65°C ~ 150°C
STMicroelectronics DIODE GEN PURP 200V 4A DPAK ActiveStandard200V4A1.05V @ 4AStandard Recovery >500ns, > 200mA (Io)30ns3µA @ 200V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-40°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 30V 3A DPAK ActiveSchottky30V3A600mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 30V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 150°C
ON Semiconductor DIODE GEN PURP 800V 8A TO277-3 ActiveStandard800V8A1.1V @ 8AStandard Recovery >500ns, > 200mA (Io)3.37µs5µA @ 800V118pF @ 0V, 1MHzSurface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 120V 15A TO277-3 ActiveSchottky120V15A790mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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35µA @ 120V
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Surface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 400V 8A TO277-3 ActiveStandard400V8A1.1V @ 8AStandard Recovery >500ns, > 200mA (Io)3.37µs5µA @ 400V118pF @ 0V, 1MHzSurface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
Littelfuse Inc. DIODE SCHOTTKY 100V 5A TO277B ActiveSchottky100V5A750mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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120µA @ 100V245pF @ 5V, 1MHzSurface MountTO-277, 3-PowerDFNTO-277B-55°C ~ 150°C
Micro Commercial Co DIODE SCHOTTKY 100V 12A TO277 ActiveSchottky100V12A600mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 100V
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Surface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
Littelfuse Inc. DIODE SCHOTTKY 8A 100V TO277B ActiveSchottky100V8A680mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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70µA @ 100V542pF @ 5V, 1MHzSurface MountTO-277, 3-PowerDFNTO-277B-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 8A 100V DO-214AB ActiveSchottky100V8A900mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 100V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
STMicroelectronics DIODE SCHOTTKY 60V 5A SMC ActiveSchottky60V5A520mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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220µA @ 60V
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Surface MountDO-214AB, SMCSMC150°C (Max)
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 10A TO277A ActiveSchottky120V10A780mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 120V
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Surface MountTO-277, 3-PowerDFNTO-277A (SMPC)-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 300V 1A SMA ActiveStandard300V1A1.1V @ 1AFast Recovery =< 500ns, > 200mA (Io)65ns5µA @ 300V
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Surface MountDO-214AC, SMASMA-65°C ~ 175°C
STMicroelectronics DIODE RECT 50V 20A POWERFLAT ActiveFERD (Field Effect Rectifier Diode)50V20A510mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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800µA @ 50V
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Surface Mount8-PowerVDFNPowerFlat™ (5x6)150°C (Max)
Sanken DIODE GEN PURP 400V 2A AXIAL ObsoleteStandard400V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 400V
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Through HoleAxial
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-40°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 100V 12A TO277-3 ActiveSchottky100V12A670mV @ 12AFast Recovery =< 500ns, > 200mA (Io)27.33ns100µA @ 100V1124pF @ 4V, 1MHzSurface MountTO-277, 3-PowerDFNTO-277-3-55°C ~ 150°C
Central Semiconductor Corp DIODE GEN PURP 200V 2A SMB ActiveStandard200V2A1.1V @ 2AStandard Recovery >500ns, > 200mA (Io)2.5µs5µA @ 200V30pF @ 4V, 1MHzSurface MountDO-214AA, SMBSMB-65°C ~ 150°C
Central Semiconductor Corp DIODE GEN PURP 1000V 2A SMB ActiveStandard1000V2A1.1V @ 2AStandard Recovery >500ns, > 200mA (Io)2.5µs5µA @ 1000V30pF @ 4V, 1MHzSurface MountDO-214AA, SMBSMB-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 5A DPAK ActiveStandard600V5A1.2V @ 5AFast Recovery =< 500ns, > 200mA (Io)145ns5µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-PAK (TO-252AA)-65°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 100V 10A 5DFN ActiveSchottky100V10A720mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 100V
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Surface Mount8-PowerTDFN, 5 Leads5-DFN (5x6) (8-SOFL)-55°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 6A DPAK ActiveStandard600V6A3V @ 6AStandard Recovery >500ns, > 200mA (Io)30ns30µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 175°C
Diodes Incorporated DIODE SBR 45V 6A U-DFN3030-8 ActiveSuper Barrier45V6A520mV @ 6AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 45V
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Surface Mount8-PowerUDFNU-DFN3030-8-55°C ~ 150°C
Diodes Incorporated DIODE SBR 20V 6A U-DFN3030-8 ActiveSuper Barrier20V6A450mV @ 6AFast Recovery =< 500ns, > 200mA (Io)
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250µA @ 20V
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Surface Mount8-PowerUDFNU-DFN3030-8-55°C ~ 150°C
ON Semiconductor 6A 200V ULTRA FAST RECTIFIER Active
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Surface MountTO-277, 3-PowerDFNTO-277-3
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ON Semiconductor DIODE SCHOTTKY 100V 5A DPAK ActiveSchottky100V5A710mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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3.5µA @ 100V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 175°C
Diodes Incorporated DIODE GEN PURP 800V 5A POWERDI5 ActiveStandard800V5A1.2V @ 5AFast Recovery =< 500ns, > 200mA (Io)500ns10µA @ 800V
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Surface MountPowerDI™ 5PowerDI®5-65°C ~ 150°C
Nexperia USA Inc. DIODE SCHOTTKY 45V 14A CFP15 ActiveSchottky45V14A (DC)480mV @ 10AFast Recovery =< 500ns, > 200mA (Io)40ns80µA @ 45V1.4pF @ 1V, 1MHzSurface MountTO-277, 3-PowerDFNCFP15175°C (Max)
Diodes Incorporated DIODE SBR 120V 12A POWERDI5 ActiveSuper Barrier120V12A800mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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250µA @ 120V
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Surface MountPowerDI™ 5PowerDI™ 5-65°C ~ 150°C
Diodes Incorporated DIODE GEN PURP 200V 4A POWERDI5 ActiveStandard200V4A890mV @ 4AFast Recovery =< 500ns, > 200mA (Io)25ns5µA @ 200V
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Surface MountPowerDI™ 5PowerDI™ 5-65°C ~ 175°C
Diodes Incorporated DIODE SBR 120V 12A POWERDI5 ActiveSuper Barrier120V12A830mV @ 12AStandard Recovery >500ns, > 200mA (Io)
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200µA @ 120V
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Surface MountPowerDI™ 5PowerDI®5-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 60V 20A SLIMDPAK ActiveSchottky60V20A660mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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3.6mA @ 60V2250pF @ 4V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63SlimDPAK-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 45V 20A SLIMDPAK ActiveSchottky45V20A610mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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1.5mA @ 45V3000pF @ 4V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63SlimDPAK-40°C ~ 150°C
Central Semiconductor Corp DIODE SCHOTTKY 60V 3A DPAK ActiveSchottky60V3A750mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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30µA @ 60V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-65°C ~ 150°C
Diodes Incorporated DIODE GEN PURP 400V 5A TO252-3 ActiveStandard400V5A1.4V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V50pF @ 10V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3-65°C ~ 175°C