Diodes - Rectifiers - Single - Discrete Semiconductor Products - SK56C V7G NRVUA140VT3G BYT54M-TAP SR510 A0G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SK56C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 60V DO-214AB	Active	Schottky	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
NRVUA140VT3G	ON Semiconductor	DIODE GEN PURP 400V 2A SMA	Active	Standard	400V	2A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 400V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
BYT54M-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1KV 1.25A SOD57	Active	Avalanche	1000V	1.25A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 1000V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
SR510 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO201AD	Active	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
MUR340SB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	Active	Standard	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
HS5B R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB	Not For New Designs	Standard	100V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
CD214C-B320R	Bourns Inc.	DIO SBD VRRM 20V 3A SMC	Active	Schottky	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	250pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
TPUH6D S1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A TO277A	Active	Standard	200V	6A	1.05V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	10µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
TPUH6J S1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A TO277A	Active	Standard	600V	6A	3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
FDH300A	ON Semiconductor	DIODE GEN PURP 125V 200MA DO35	Active	Standard	125V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1nA @ 125V	6pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
V8PM10SHM3/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 8A TO277A	Active	Schottky	100V	8A	780mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 100V	860pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
SB05-05P-TD-E	ON Semiconductor	DIODE SCHOTTKY 50V 500MA PCP	Active	Schottky	50V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	50µA @ 25V	18pF @ 10V, 1MHz	Surface Mount	TO-243AA	PCP	-55°C ~ 125°C
HS5F V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 5A DO214AB	Active	Standard	300V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5D R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB	Not For New Designs	Standard	200V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
CMR1U-06 TR13	Central Semiconductor Corp	DIODE GEN PURP 600V 1A SMB	Active	Standard	600V	1A	1.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 600V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
HS5K R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	Not For New Designs	Standard	800V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5K V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	Active	Standard	800V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TSPB5H100S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A SMPC4.0	Active	Schottky	100V	5A	660mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 100V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
TSPB5H120S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 120V 5A SMPC4.0	Active	Schottky	120V	5A	740mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
TSPB5H150S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A SMPC4.0	Active	Schottky	150V	5A	840mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
B3L30LP-7	Diodes Incorporated	DIODE SCHOTTKY 30V 3A 8DFN	Active	Schottky	30V	3A	450mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Surface Mount	8-PowerUDFN	U-DFN3030-8	-65°C ~ 150°C
NRVUS230T3G	ON Semiconductor	DIODE GEN PURP 300V 2A SMB	Active	Standard	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 300V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
SBRS8190T3G	ON Semiconductor	DIODE SCHOTTKY 90V 1A SMB	Active	Schottky	90V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 90V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
NRVBSS26T3G	ON Semiconductor	DIODE SCHOTTKY 60V 2A SMB	Active	Schottky	60V	2A	630mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
UF5404-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO201AD	Active	Standard	400V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	45pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
S3GHE3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	1.15V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RSX301LAM30TFTR	Rohm Semiconductor	AUTOMOTIVE SCHOTTKY BARRIER DIOD	Active	Schottky	30V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
BYV27-600-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 2A SOD57	Active	Avalanche	600V	2A	1.35V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
B560CQ-13-F	Diodes Incorporated	DIODE SCHOTTKY 60V 5A SMC	Active	Schottky	60V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	300pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
RB080LAM-30TFTR	Rohm Semiconductor	AUTOMOTIVE SCHOTTKY BARRIER DIOD	Active	Schottky	30V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 30V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
NRVBS2040LT3G	ON Semiconductor	DIODE SCHOTTKY 40V 2A SMB	Active	Schottky	40V	2A	430mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 40V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 125°C
TPAU3J S1G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 600V 3A TO277A	Active	Avalanche	600V	3A	1.88V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
TPAU3D S1G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 200V 3A TO277A	Active	Avalanche	200V	3A	1.88V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
TPAR3J S1G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 600V 3A TO277A	Active	Avalanche	600V	3A	1.55V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	10µA @ 600V	58pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
TPAU3G S1G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 400V 3A TO277A	Active	Avalanche	400V	3A	1.88V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
MURS160HE3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 175°C
MBR8H100MFST1G	ON Semiconductor	DIODE SCHOTTKY 100V 8A 5DFN	Active	Schottky	100V	8A	900mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 100V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
DST560S-A	Littelfuse Inc.	DIODE SCHOTTKY 60V 5A TO277B	Active	Schottky	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 60V	314pF @ 5V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 150°C
MUR420-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
S15MC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 15A DO214AB	Active	Standard	1000V	15A	1.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 1000V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TPAR3D S1G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 200V 3A TO277A	Active	Avalanche	200V	3A	1.55V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	10µA @ 200V	58pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SBR3U40P1Q-7	Diodes Incorporated	DIODE SBR 40V 3A POWERDI123	Active	Super Barrier	40V	3A	500mV @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	POWERDI®123	PowerDI™ 123	-65°C ~ 150°C
NTS12120EMFST1G	ON Semiconductor	DIODE SCHOTTKY 120V 12A 5DFN	Active	Schottky	120V	12A	830mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	55µA @ 120V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 150°C
TPAR3G S1G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 400V 3A TO277A	Active	Avalanche	400V	3A	1.55V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	10µA @ 400V	58pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SBR8M100P5-13	Diodes Incorporated	DIODE SBR 100V 8A POWERDI5	Active	Super Barrier	100V	8A	880mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	2µA @ 100V	-	Surface Mount	PowerDI™ 5	PowerDI™ 5	-55°C ~ 175°C
USB260-M3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 600V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
PMEG45A10EPDZ	Nexperia USA Inc.	DIODE SCHOTTKY 45V 10A CFP15	Active	Schottky	45V	10A	540mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	13ns	500µA @ 45V	240pF @ 10V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	CFP15	150°C (Max)
DST580S-A	Littelfuse Inc.	DIODE SCHOTTKY 5A 80V TO277B	Active	Schottky	80V	5A	720mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 80V	245pF @ 5V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 150°C
RF302LAM2STFTR	Rohm Semiconductor	AUTOMOTIVE FAST RECOVERY DIODE	Active	Standard	200V	3A	920mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 200V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
RB050LAM-30TFTR	Rohm Semiconductor	AUTOMOTIVE SCHOTTKY BARRIER DIOD	Active	Schottky	30V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 30V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)

Manufacturers for Diodes - Rectifiers - Single