Diodes - Rectifiers - Single - Discrete Semiconductor Products - STBR6012W IDH08G65C5XKSA2 FFSP1065A SCS212AJHRTLL - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
STBR6012W	STMicroelectronics	DIODE GEN PURP 1.2KV 60A DO247	Active	Standard	1200V	60A	1.3V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1200V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
IDH08G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 8A TO220-2-1	Active	Silicon Carbide Schottky	650V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	140µA @ 650V	250pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
FFSP1065A	ON Semiconductor	DIODE SCHOTTKY 650V 15A TO220-2	Active	Silicon Carbide Schottky	650V	15A (DC)	1.75V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	575pF @ 1V, 100kHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
SCS212AJHRTLL	Rohm Semiconductor	DIODE SCHOTTKY 650V 12A TO263AB	Active	Silicon Carbide Schottky	650V	12A (DC)	1.55V @ 12A	No Recovery Time > 500mA (Io)	0ns	240µA @ 600V	438pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	175°C (Max)
STBR6012WY	STMicroelectronics	DIODE GEN PURP 1.2KV 60A DO247	Active	Standard	1200V	60A	1.3V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1200V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
CDBJFSC8650-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Active	Silicon Carbide Schottky	650V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	560pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220F	-55°C ~ 175°C
VS-30EPF06PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AC	Active	Standard	600V	30A	1.41V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
VS-25FR40	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 25A DO203AA	Active	Standard, Reverse Polarity	400V	25A	1.3V @ 78A	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 400V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
CDBDSC10650-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Active	Silicon Carbide Schottky	650V	33A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	690pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252)	-55°C ~ 175°C
FFSP0865A	ON Semiconductor	DIODE SCHOTTKY 650V 13A TO220-2	Active	Silicon Carbide Schottky	650V	13A (DC)	1.75V @ 8A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	463pF @ 1V, 100kHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
1N4938-1	Microsemi Corporation	DIODE GEN PURP 175V 100MA DO35	Active	Standard	175V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 175V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
LSIC2SD120C08	Littelfuse Inc.	DIODE SIC SCHOTTKY 1200V 8A	Active	Silicon Carbide Schottky	1200V	24.5A (DC)	1.8V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	454pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-55°C ~ 175°C
RURG8060-F085	ON Semiconductor	DIODE GEN PURP 600V 80A TO247-2	Active	Standard	600V	80A	1.6V @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
FFSP1265A	ON Semiconductor	DIODE SCHOTTKY 650V 15A TO220-2	Active	Silicon Carbide Schottky	650V	15A (DC)	1.75V @ 12A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	665pF @ 1V, 100kHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
FFSP08120A	ON Semiconductor	DIODE SCHOTTKY 1.2KV 8A TO220-2	Active	Silicon Carbide Schottky	1200V	8A (DC)	1.75V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 1200V	538pF @ 1V, 100kHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
SICR10650	SMC Diode Solutions	DIODE SCHOTTKY SILICON CARBIDE S	Active	Silicon Carbide Schottky	650V	10A	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	695pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SICRF10650	SMC Diode Solutions	DIODE SCHOTTKY SILICON CARBIDE S	Active	Silicon Carbide Schottky	650V	10A	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	695pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 175°C
VS-80EBU02	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 80A POWIRTAB	Active	Standard	200V	80A	1.13V @ 80A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 200V	-	Through Hole	PowerTab™, PowIRtab™	PowIRtab™	-
NXPSC10650Q	WeEn Semiconductors	DIODE SCHOTTKY 650V 10A TO220AC	Active	Silicon Carbide Schottky	650V	10A	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	250µA @ 650V	300pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
VS-30EPF12PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 30A TO247AC	Active	Standard	1200V	30A	1.41V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
CDBJFSC10650-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Active	Silicon Carbide Schottky	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	710pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220F	-55°C ~ 175°C
IDFW40E65D1EXKSA1	Infineon Technologies	IGBT 650V 40A TO247-3	Active	Standard	650V	42A (DC)	2.1V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	76ns	40µA @ 650V	-	Through Hole	TO-247-3	PG-TO247-3-AI	-40°C ~ 175°C
VS-EPH3006-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AC	Active	Standard	600V	30A	2.65V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-65°C ~ 175°C
C3D12065A	Cree/Wolfspeed	DIODE SCHOTTKY 650V 35A TO220-2	Active	Silicon Carbide Schottky	650V	35A (DC)	1.8V @ 12A	No Recovery Time > 500mA (Io)	0ns	74µA @ 650V	641.5pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
STPSC10H12DY	STMicroelectronics	DIODE SCHOTTKY 1.2KV 10A TO220AC	Active	Silicon Carbide Schottky	1200V	10A	1.5V @ 10A	No Recovery Time > 500mA (Io)	0ns	60µA @ 1200V	725pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
IDW12G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 12A TO247-3	Active	Silicon Carbide Schottky	650V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	190µA @ 650V	360pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
FFSP10120A	ON Semiconductor	DIODE SCHOTTKY 1.2KV 10A TO220-2	Active	Silicon Carbide Schottky	1200V	10A (DC)	1.75V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 1200V	612pF @ 1V, 100kHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
SCS208AGHRC	Rohm Semiconductor	DIODE SCHOTTKY 650V 8A TO-220-2	Active	Silicon Carbide Schottky	650V	8A (DC)	1.55V @ 8A	No Recovery Time > 500mA (Io)	0ns	160µA @ 600V	291pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
VS-80PFR80	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 80A DO203AB	Active	Standard	800V	80A	1.4V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-55°C ~ 180°C
CDBDSC51200-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Active	Silicon Carbide Schottky	1200V	18A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	475pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252)	-55°C ~ 175°C
1N5614	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N5618	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
LSIC2SD120A05	Littelfuse Inc.	DIODE SCHOTTKY 1.2KV 17.5A TO220	Active	Silicon Carbide Schottky	1200V	17.5A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	310pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
FFSP1665A	ON Semiconductor	DIODE SCHOTTKY 650V 16A TO220-2	Active	Silicon Carbide Schottky	650V	16A (DC)	1.75V @ 16A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	887pF @ 1V, 100kHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
SICR10650CT	SMC Diode Solutions	DIODE SCHOTTKY SILICON CARBIDE S	Active	Silicon Carbide Schottky	650V	5A	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	60µA @ 650V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 175°C
SICRF10650CT	SMC Diode Solutions	DIODE SCHOTTKY SILICON CARBIDE S	Active	Silicon Carbide Schottky	650V	5A	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	60µA @ 650V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 175°C
VS-16FLR60S02	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 16A DO203AA	Active	Standard, Reverse Polarity	600V	16A	1.4V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	50µA @ 600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
NXPSC20650Q	WeEn Semiconductors	DIODE SCHOTTKY 650V 20A TO220AC	Active	Silicon Carbide Schottky	650V	20A	1.7V @ 20A	No Recovery Time > 500mA (Io)	0ns	500µA @ 650V	600pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
STPSC20065WY	STMicroelectronics	DIODE SCHOTTKY 650V 20A DO247	Active	Silicon Carbide Schottky	650V	20A	1.45V @ 20A	No Recovery Time > 500mA (Io)	0ns	300µA @ 650V	1250pF @ 0V, 1MHz	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
IDH08G120C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 8A TO220-2	Active	Silicon Carbide Schottky	1200V	8A (DC)	1.95V @ 8A	No Recovery Time > 500mA (Io)	0ns	40µA @ 1200V	365pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
SCS205KGHRC	Rohm Semiconductor	DIODE SCHOTTKY 1200V 5A TO-220-2	Active	Silicon Carbide Schottky	1200V	5A (DC)	1.6V @ 5A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	270pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
1N5617	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
SCS210AGHRC	Rohm Semiconductor	DIODE SCHOTTKY 650V 10A TO-220-2	Active	Silicon Carbide Schottky	650V	10A (DC)	1.55V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	365pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
VS-30EPF12-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 30A TO247AC	Active	Standard	1200V	30A	1.41V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
STPSC15H12D	STMicroelectronics	DIODE SCHOTTKY 1.2KV 15A TO220AC	Active	Silicon Carbide Schottky	1200V	15A	1.5V @ 15A	No Recovery Time > 500mA (Io)	0ns	90µA @ 1200V	1200pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
VS-40EPS12-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 40A TO247AC	Active	Standard	1200V	40A	1V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
VS-70HFR20	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 70A DO203AB	Active	Standard	200V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 180°C
MSC010SDA120K	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 10A TO220-2	Active	Silicon Carbide Schottky	1200V	10A (DC)	1.5V @ 10A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-220-2	TO-220-2	-
63SPB100A	SMC Diode Solutions	DIODE SCHOTTKY 100V 60A SPD-2A	Active	Schottky	100V	60A	870mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	1500pF @ 5V, 1MHz	Surface Mount	SPD-2A	SPD-2A	-55°C ~ 175°C
1N5618US	Microsemi Corporation	DIODE GEN PURP 600V 1A D5A	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C

Manufacturers for Diodes - Rectifiers - Single