Número da peça Fabricante / Marca Descrição breve Status da ParteConfiguração DrivenTipo de canalNúmero de driversTipo de portaTensão - FornecimentoTensão lógica - VIL, VIHCorrente - Saída máxima (fonte, pia)Tipo de entradaHigh Side Voltage - Max (Bootstrap)Rise / Fall Time (Typ)Temperatura de operaçãoTipo de montagemPacote / CasoPacote de dispositivos de fornecedores
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8-DIP ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
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125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRIVER HALF BRIDGE DIP-8 ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
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125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8SOIC ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
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125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8SOIC ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
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125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8SOIC ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
-
125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8-DIP ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
-
125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8SOIC ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
-
125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC