Numéro d'article Fabricant / marque Brève description État de la pièceConfiguration pilotéeType de canalNombre de pilotesType de porteTension - AlimentationTension logique - VIL, VIHCourant - sortie de crête (source, évier)Type d'entréeTension latérale élevée - Max (Bootstrap)Rise / Fall Time (Typ)Température de fonctionnementType de montagePaquet / casPackage de périphérique fournisseur
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8-DIP ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
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125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRIVER HALF BRIDGE DIP-8 ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
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125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8SOIC ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
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125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8SOIC ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
-
125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8SOIC ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
-
125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8-DIP ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
-
125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8SOIC ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
-
125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC