品番 メーカー/ブランド 簡単な説明 部品ステータス駆動構成チャネルタイプドライバ数ゲートタイプ電圧 - 供給ロジック電圧 - VIL、VIH電流 - ピーク出力(ソース、シンク)入力方式ハイサイド電圧 - 最大(ブートストラップ)立ち上がり/立ち下がり時間(Typ)動作温度取付タイプパッケージ/ケースサプライヤデバイスパッケージ
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8-DIP ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
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125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRIVER HALF BRIDGE DIP-8 ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
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125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8SOIC ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
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125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8SOIC ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
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125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8SOIC ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
-
125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8-DIP ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
-
125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRVR HALF BRDG SELF-OSC 8SOIC ObsoleteHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V
-
125mA, 250mARC Input Circuit600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC