Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - FR153G A0G FR154G A0G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
FR153G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO204AC	Active	Standard	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR154G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO204AC	Active	Standard	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR155G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO204AC	Active	Standard	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR156G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO204AC	Active	Standard	800V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR152G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO204AC	Active	Standard	100V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR153G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO204AC	Active	Standard	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR154G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO204AC	Active	Standard	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR155G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO204AC	Active	Standard	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR156G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO204AC	Active	Standard	800V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR157G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.5A DO204AC	Active	Standard	-	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SS110 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A DO214AC	Active	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS19 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO214AC	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1A M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	Active	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1B M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	Active	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1D M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	Active	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1G M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	Active	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1J M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1K M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	Active	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1M M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO214AC	Active	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HER106G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4006HR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	Active	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4007HR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	Active	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HS1AL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1DL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1AL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1DL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1DL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1AL MQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1AL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL MQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL MTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1DL MQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1DL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1DL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL MQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL MTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HER106G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1A R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4006HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	Active	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4007HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	Active	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HS1BL RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single