Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 500MA SUBSMA ActiveStandard200V500mA1.3V @ 500mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V4pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 500MA SUBSMA ActiveStandard200V500mA1.3V @ 500mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V4pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 500MA SUBSMA ActiveStandard200V500mA1.3V @ 500mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V4pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 500MA DO204AL ActiveSchottky50V500mA700mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V80pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 500MA DO204AL ActiveSchottky60V500mA700mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V80pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL ActiveStandard800V1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 800V17pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1A DO204AL ActiveStandard
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1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 1000V17pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 200MA SOD523F ActiveSchottky30V200mA (DC)1V @ 200mASmall Signal =< 200mA (Io), Any Speed5ns500nA @ 25V10pF @ 1V, 1MHzSurface MountSC-79, SOD-523SOD-523F-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 500MA SUB SMA ActiveStandard50V500mA1.3V @ 500mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 50V4pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 500MA SUB SMA ActiveStandard50V500mA1.3V @ 500mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 50V4pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 500MA SUBSMA ActiveStandard200V500mA1.3V @ 500mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V4pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 500MA SUBSMA ActiveStandard200V500mA1.3V @ 500mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V4pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 500MA DO204AL ActiveSchottky50V500mA700mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V80pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 500MA DO204AL ActiveSchottky60V500mA700mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V80pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL ActiveStandard800V1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 800V17pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A TS-1 ActiveStandard800V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 800V15pF @ 4V, 1MHzThrough HoleT-18, AxialTS-1-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1A TS-1 ActiveStandard
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1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 1000V15pF @ 4V, 1MHzThrough HoleT-18, AxialTS-1-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 2A DO204AC ActiveStandard
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2A1V @ 2AStandard Recovery >500ns, > 200mA (Io)
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5µA @ 1000V15pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A TS-1 ActiveStandard800V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 800V15pF @ 4V, 1MHzThrough HoleT-18, AxialTS-1-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1A TS-1 ActiveStandard
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1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 1000V15pF @ 4V, 1MHzThrough HoleT-18, AxialTS-1-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 2A DO204AC ActiveStandard
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2A1V @ 2AStandard Recovery >500ns, > 200mA (Io)
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5µA @ 1000V15pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 500MA DO204AL ActiveSchottky50V500mA700mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V80pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 500MA DO204AL ActiveSchottky60V500mA700mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V80pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL ActiveStandard800V1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 800V17pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1A DO204AL ActiveStandard
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1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 1000V17pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 14V 500MA SOD123 ActiveSchottky14V500mA385mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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250µA @ 20V170pF @ 0V, 1MHzSurface MountSOD-123SOD-123-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A SMAF ActiveStandard600V1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 600V9pF @ 4V, 1MHzSurface MountDO-221AC, SMA Flat LeadsSMAF-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL ActiveStandard50V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 50V15pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 1A DO204AL ActiveStandard100V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 100V15pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A DO204AL ActiveStandard200V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 200V15pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A DO204AL ActiveStandard300V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 300V15pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A DO204AL ActiveStandard400V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 400V15pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 500MA DO204AL ActiveSchottky20V500mA550mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V110pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 500MA DO204AL ActiveSchottky30V500mA550mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V110pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 500MA DO204AL ActiveSchottky40V500mA550mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V110pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL ActiveStandard50V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 50V17pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 1A DO204AL ActiveStandard100V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 100V17pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A DO204AL ActiveStandard200V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 200V17pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A DO204AL ActiveStandard400V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 400V17pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO204AL ActiveStandard600V1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 600V17pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 2A DO204AC ActiveStandard800V2A1V @ 2AStandard Recovery >500ns, > 200mA (Io)
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5µA @ 800V15pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL ActiveStandard50V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 50V15pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 1A DO204AL ActiveStandard100V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 100V15pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A DO204AL ActiveStandard200V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 200V15pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A DO204AL ActiveStandard300V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 300V15pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A DO204AL ActiveStandard400V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 400V15pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 500MA DO204AL ActiveSchottky20V500mA550mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V110pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 500MA DO204AL ActiveSchottky30V500mA550mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V110pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 500MA DO204AL ActiveSchottky40V500mA550mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V110pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL ActiveStandard50V1A1V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 50V17pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C