1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Diodes - Rectifiers - Single
  5. Products

Manufacturers for Diodes - Rectifiers - Single

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
RSFBLHRUG
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 500MA SUBSMA ActiveStandard100V500mA1.3V @ 500mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 100V4pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
RSFBLHRVG
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 500MA SUBSMA ActiveStandard100V500mA1.3V @ 500mAFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 100V4pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
FR151GHA0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1.5A DO204AC ActiveStandard50V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 50V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR152GHA0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 1.5A DO204AC ActiveStandard100V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 100V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR153GHA0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1.5A DO204AC ActiveStandard200V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR154GHA0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1.5A DO204AC ActiveStandard400V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 400V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR155GHA0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1.5A DO204AC ActiveStandard600V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 600V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR156GHA0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1.5A DO204AC ActiveStandard800V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 800V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR157GHA0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 1.5A DO204AC ActiveStandard
-
1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 1000V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR201G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 50V 2A DO204AC ActiveStandard50V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 50V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR202G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 2A DO204AC ActiveStandard100V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 100V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR203G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 200V 2A DO204AC ActiveStandard200V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR204G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 2A DO204AC ActiveStandard400V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 400V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR205G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO204AC ActiveStandard600V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 600V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR206G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 800V 2A DO204AC ActiveStandard800V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 800V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR207G A0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 2A DO204AC ActiveStandard
-
2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 1000V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
SR203 A0G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 2A DO204AC ActiveSchottky30V2A550mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 125°C
SR205 A0G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 2A DO204AC ActiveSchottky50V2A700mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
SR209 A0G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 2A DO204AC ActiveSchottky90V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR151GHB0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1.5A DO204AC ActiveStandard50V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 50V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR152GHB0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 1.5A DO204AC ActiveStandard100V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 100V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR153GHB0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1.5A DO204AC ActiveStandard200V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR154GHB0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1.5A DO204AC ActiveStandard400V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 400V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR155GHB0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1.5A DO204AC ActiveStandard600V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 600V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR156GHB0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1.5A DO204AC ActiveStandard800V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 800V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR157GHB0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 1.5A DO204AC ActiveStandard
-
1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 1000V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR201G B0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 50V 2A DO204AC ActiveStandard50V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 50V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR202G B0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 2A DO204AC ActiveStandard100V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 100V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR203G B0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 200V 2A DO204AC ActiveStandard200V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR204G B0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 2A DO204AC ActiveStandard400V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 400V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR205G B0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO204AC ActiveStandard600V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 600V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
FR206G B0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 800V 2A DO204AC ActiveStandard800V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 800V10pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
SR204 B0G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 2A DO204AC ActiveSchottky40V2A550mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 125°C
SR205 B0G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 2A DO204AC ActiveSchottky50V2A700mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
SR206 B0G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 2A DO204AC ActiveSchottky60V2A700mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
SR209 B0G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 2A DO204AC ActiveSchottky90V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
SR210 B0G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 2A DO204AC ActiveSchottky100V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
HER107G R0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL ActiveStandard800V1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 800V10pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
HER108G R0G
 Taiwan Semiconductor Corporation DIODE GEN PURP 1A DO204AL ActiveStandard
-
1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 1000V10pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
SR009 R1G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 500MA DO204AL ActiveSchottky90V500mA850mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V65pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
SS110L RHG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 1A SUB SMA ActiveSchottky100V1A800mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 100V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS115L RHG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 1A SUB SMA ActiveSchottky150V1A900mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 150V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SS19L RHG
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 1A SUB SMA ActiveSchottky90V1A800mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 90V
-
Surface MountDO-219ABSub SMA-55°C ~ 150°C
SRT15 R0G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 1A TS-1 ActiveSchottky50V1A700mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through HoleT-18, AxialTS-1-55°C ~ 150°C
SRT16 R0G
 Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 1A TS-1 ActiveSchottky60V1A700mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through HoleT-18, AxialTS-1-55°C ~ 150°C
ES1LD M2G
 Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A DO214AC ActiveStandard200V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 200V16pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
ES1LG M2G
 Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A DO214AC ActiveStandard400V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 400V18pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
ES1LJ M2G
 Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A DO214AC ActiveStandard600V1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 600V18pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
RS2BA M2G
 Taiwan Semiconductor Corporation DIODE GEN PURP 100V 1.5A DO214AC ActiveStandard100V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 100V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
RS2DA M2G
 Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1.5A DO214AC ActiveStandard200V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
  1. 34
  2. 35
  3. 36
  4. 37
  5. 38
  6. 39
  7. 40
  8. 41
  9. 42
  10. 43
Email: [email protected]
Copyrights © 2019 CHIPS IC All Rights Reserved