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GeneSiC Semiconductor |
DIODE GEN PURP REV 1.6KV 85A DO5 |
Active | Standard, Reverse Polarity | 1600V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 85A DO5 |
Active | Standard | 1200V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE 1.2KV 60A TO247AC |
Active | Standard | 1200V | 60A | 1.09V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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M/A-Com Technology Solutions |
DIODE GEN PURP 50V 300MA |
Active | Standard | 50V | 300mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100µA @ 50V | - | Through Hole | Axial | 05 Plastic Package | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 85A DO203AB |
Active | Standard | 800V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
Active | Standard | 600V | 40A | 1.95V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 85A DO203AB |
Active | Standard | 1000V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 1000V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 85A DO5 |
Active | Standard, Reverse Polarity | 600V | 85A | 1.4V @ 85A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 85A DO5 |
Active | Standard, Reverse Polarity | 600V | 85A | 1.4V @ 85A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 650V 10A TO220-2L |
Active | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2L | 175°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 180V 200MA DO213 |
Active | Standard | 180V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 100µA @ 180V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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M/A-Com Technology Solutions |
DIODE GEN PURP 50V 300MA |
Active | Standard | 50V | 300mA (DC) | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 90µA @ 50V | - | Through Hole | D, Axial | - | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 80A TO247AC |
Active | Standard | 800V | 80A | 1.17V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 3A B-MELF |
Active | Standard | 800V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A TO247AC |
Active | Standard | 200V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 85A DO203AB |
Active | Standard, Reverse Polarity | 1600V | 85A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 85A DO203AB |
Active | Standard | 600V | 85A | 1.75V @ 266.9A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 40A DO203AB |
Active | Standard, Reverse Polarity | 1000V | 40A | 1.95V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 1000V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
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M/A-Com Technology Solutions |
DIODE GEN PURP 50V 300MA D-5D |
Active | Standard | 50V | 300mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100µA @ 100V | - | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 85A DO203AB |
Active | Standard | 1000V | 85A | - | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 1000V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 1A AXIAL |
Active | Standard | 100V | 1A | 975mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 100V | - | Through Hole | A, Axial | - | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 500MA D5A |
Active | Standard | 600V | 500mA (DC) | 1V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL |
Active | Standard | 200V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | - | Through Hole | A, Axial | - | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 150A DO205AA |
Active | Standard | 200V | 150A | 1.33V @ 471A | Standard Recovery >500ns, > 200mA (Io) | - | 35mA @ 200V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 2.5A A-MELF |
Active | Standard | 100V | 2.5A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 100V | 3.5pF @ 6V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | 150°C (Max) |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 120A D-67 |
Active | Schottky, Reverse Polarity | 40V | 120A | 700mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Chassis Mount | D-67 HALF-PAK | D-67 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 150A B42 |
Active | Standard | 100V | 150A | 1.33V @ 471A | Standard Recovery >500ns, > 200mA (Io) | - | 35mA @ 100V | - | Chassis, Stud Mount | B-42 | B-42 | -40°C ~ 200°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 150V PRM1-1 |
Active | Schottky | 150V | - | 1.07V @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 150V | 6000pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 175°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 45V PRM1-1 |
Active | Schottky | 45V | - | 550mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20mA @ 45V | 10300pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 125°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 200V PRM1-1 |
Active | Schottky | 200V | - | 1.12V @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 200V | 3600pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 175°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 45V PRM1-1 |
Active | Schottky | 45V | - | 610mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20mA @ 45V | 10300pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 45V 240A PRM1-1 |
Active | Schottky | 45V | 240A | 690mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20mA @ 45V | 10300pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 175°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 100V PRM1-1 |
Active | Schottky | 100V | - | 860mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 100V | 5500pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 380A DO205 |
Active | Standard | 1600V | 380A | 1.2V @ 380A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 180°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 100V 4A |
Active | Silicon Carbide Schottky | 100V | 4A (DC) | 1.6V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 100V | 76pF @ 1V, 1MHz | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | -55°C ~ 225°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 300A DO205AB |
Active | Standard | 100V | 300A | 1.4V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 100V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 300A DO205AB |
Active | Standard | 200V | 300A | 1.4V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 200V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 320A DO205AB |
Active | Standard | 800V | 320A | 1.33V @ 750A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 800V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 600V 4A |
Active | Silicon Carbide Schottky | 600V | 4A (DC) | 1.6V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 600V | 76pF @ 1V, 1MHz | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | -55°C ~ 225°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 400A DO205 |
Active | Standard | 2000V | 400A | 1.62V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 2000V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 190°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 400A DO205 |
Active | Standard | 1600V | 400A | - | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 1600V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 190°C |
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Microsemi Corporation |
DIODE SCHOTTKY 30V 60A DO203AB |
Active | Schottky | 30V | 60A (DC) | 480mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GP 600V 1A 120PCS |
Active | Standard | 600V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GP 600V 1A 120PCS |
Active | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GP 600V 1A 120PCS |
Active | Standard | 600V | 1A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GP 100V 200MA DIE 120 |
Active | Standard | 100V | 200mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Surface Mount | Die | Die | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 750MA TO257 |
Active | Silicon Carbide Schottky | 650V | 750mA | 1.39V @ 750mA | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 76pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 2.5A TO257 |
Active | Silicon Carbide Schottky | 650V | 2.5A | 1.3V @ 2.5A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 274pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 750MA TO257 |
Active | Silicon Carbide Schottky | 1200V | 750mA | 1.74V @ 750mA | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 66pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
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Nexperia USA Inc. |
DIODE GEN PURP 200V 200MA SOT23 |
Active | Standard | 200V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 150°C (Max) |