Diodes - Redresseurs - Simples - Produits à semiconducteurs discrets - S85YR S85Q VS-60EPS12-M3 JANTX1N6643 - CHIPSIC

Numéro d'article	Fabricant / marque	Brève description	État de la pièce	Type de diode	Tension - DC Reverse (Vr) (Max)	Courant - Rectifié moyen (Io)	Tension - Avant (Vf) (Max) @ Si	La vitesse	Temps de récupération inverse (trr)	Courant - Fuite inverse @ Vr	Capacitance @ Vr, F	Type de montage	Paquet / cas	Package de périphérique fournisseur	Température de fonctionnement - Jonction
S85YR	GeneSiC Semiconductor	DIODE GEN PURP REV 1.6KV 85A DO5	Active	Standard, Reverse Polarity	1600V	85A	1.1V @ 85A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
S85Q	GeneSiC Semiconductor	DIODE GEN PURP 1.2KV 85A DO5	Active	Standard	1200V	85A	1.1V @ 85A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 180°C
VS-60EPS12-M3	Vishay Semiconductor Diodes Division	DIODE 1.2KV 60A TO247AC	Active	Standard	1200V	60A	1.09V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
JANTX1N6643	M/A-Com Technology Solutions	DIODE GEN PURP 50V 300MA	Active	Standard	50V	300mA (DC)	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	100µA @ 50V	-	Through Hole	Axial	05 Plastic Package	-65°C ~ 175°C
VS-85HF80	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 85A DO203AB	Active	Standard	800V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 800V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 180°C
VS-40HFL60S02	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 40A DO203AB	Active	Standard	600V	40A	1.95V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100µA @ 600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
VS-85HF100	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 85A DO203AB	Active	Standard	1000V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 1000V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 180°C
FR85JR05	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 85A DO5	Active	Standard, Reverse Polarity	600V	85A	1.4V @ 85A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
FR85JR02	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 85A DO5	Active	Standard, Reverse Polarity	600V	85A	1.4V @ 85A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
TRS10E65C,S1Q	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 650V 10A TO220-2L	Active	Silicon Carbide Schottky	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	90µA @ 650V	-	Through Hole	TO-220-2	TO-220-2L	175°C (Max)
CDLL5195	Microsemi Corporation	DIODE GEN PURP 180V 200MA DO213	Active	Standard	180V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100µA @ 180V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
JANTX1N6640	M/A-Com Technology Solutions	DIODE GEN PURP 50V 300MA	Active	Standard	50V	300mA (DC)	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	90µA @ 50V	-	Through Hole	D, Axial	-	-65°C ~ 175°C
VS-80APS08-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 80A TO247AC	Active	Standard	800V	80A	1.17V @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 800V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
1N5553US	Microsemi Corporation	DIODE GEN PURP 800V 3A B-MELF	Active	Standard	800V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 800V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
VS-60APF02-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 60A TO247AC	Active	Standard	200V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 200V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
VS-85HFR160	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 85A DO203AB	Active	Standard, Reverse Polarity	1600V	85A	1.4V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	4.5mA @ 1600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 150°C
VS-85HFL60S02	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 85A DO203AB	Active	Standard	600V	85A	1.75V @ 266.9A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100µA @ 600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
VS-40HFLR100S05	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 40A DO203AB	Active	Standard, Reverse Polarity	1000V	40A	1.95V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	100µA @ 1000V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
JANTXV1N6643US	M/A-Com Technology Solutions	DIODE GEN PURP 50V 300MA D-5D	Active	Standard	50V	300mA (DC)	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	100µA @ 100V	-	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
VS-85HFL100S05	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 85A DO203AB	Active	Standard	1000V	85A	-	Fast Recovery =< 500ns, > 200mA (Io)	500ns	100µA @ 1000V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
UES1002	Microsemi Corporation	DIODE GEN PURP 100V 1A AXIAL	Active	Standard	100V	1A	975mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 100V	-	Through Hole	A, Axial	-	-55°C ~ 175°C
1N6663US	Microsemi Corporation	DIODE GEN PURP 600V 500MA D5A	Active	Standard	600V	500mA (DC)	1V @ 400mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
UES1104	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Through Hole	A, Axial	-	-55°C ~ 150°C
VS-150K20A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 150A DO205AA	Active	Standard	200V	150A	1.33V @ 471A	Standard Recovery >500ns, > 200mA (Io)	-	35mA @ 200V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
UES1102SM	Microsemi Corporation	DIODE GEN PURP 100V 2.5A A-MELF	Active	Standard	100V	2.5A	-	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 100V	3.5pF @ 6V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	150°C (Max)
MBRH12040R	GeneSiC Semiconductor	DIODE SCHOTTKY 40V 120A D-67	Active	Schottky, Reverse Polarity	40V	120A	700mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Chassis Mount	D-67 HALF-PAK	D-67	-55°C ~ 150°C
VS-150KS10	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 150A B42	Active	Standard	100V	150A	1.33V @ 471A	Standard Recovery >500ns, > 200mA (Io)	-	35mA @ 100V	-	Chassis, Stud Mount	B-42	B-42	-40°C ~ 200°C
249NQ150-1	SMC Diode Solutions	DIODE SCHOTTKY 150V PRM1-1	Active	Schottky	150V	-	1.07V @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	6mA @ 150V	6000pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 175°C
244NQ045-1	SMC Diode Solutions	DIODE SCHOTTKY 45V PRM1-1	Active	Schottky	45V	-	550mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	20mA @ 45V	10300pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 125°C
246NQ200-1	SMC Diode Solutions	DIODE SCHOTTKY 200V PRM1-1	Active	Schottky	200V	-	1.12V @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	6mA @ 200V	3600pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 175°C
240NQ045-1	SMC Diode Solutions	DIODE SCHOTTKY 45V PRM1-1	Active	Schottky	45V	-	610mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	20mA @ 45V	10300pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 150°C
241NQ045-1	SMC Diode Solutions	DIODE SCHOTTKY 45V 240A PRM1-1	Active	Schottky	45V	240A	690mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	20mA @ 45V	10300pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 175°C
243NQ100-1	SMC Diode Solutions	DIODE SCHOTTKY 100V PRM1-1	Active	Schottky	100V	-	860mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	6mA @ 100V	5500pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 175°C
S380Y	GeneSiC Semiconductor	DIODE GEN PURP 1.6KV 380A DO205	Active	Standard	1600V	380A	1.2V @ 380A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1600V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-60°C ~ 180°C
GB02SHT01-46	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 4A	Active	Silicon Carbide Schottky	100V	4A (DC)	1.6V @ 1A	No Recovery Time > 500mA (Io)	0ns	5µA @ 100V	76pF @ 1V, 1MHz	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46	-55°C ~ 225°C
VS-300U10A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 300A DO205AB	Active	Standard	100V	300A	1.4V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	40mA @ 100V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 200°C
VS-300U20A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 300A DO205AB	Active	Standard	200V	300A	1.4V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	40mA @ 200V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 200°C
VS-240U80D	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 320A DO205AB	Active	Standard	800V	320A	1.33V @ 750A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 800V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
GB02SHT06-46	GeneSiC Semiconductor	DIODE SCHOTTKY 600V 4A	Active	Silicon Carbide Schottky	600V	4A (DC)	1.6V @ 1A	No Recovery Time > 500mA (Io)	0ns	5µA @ 600V	76pF @ 1V, 1MHz	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46	-55°C ~ 225°C
VS-SD400N20PC	Vishay Semiconductor Diodes Division	DIODE GEN PURP 2KV 400A DO205	Active	Standard	2000V	400A	1.62V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 2000V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 190°C
VS-SD400N16PC	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 400A DO205	Active	Standard	1600V	400A	-	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 1600V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 190°C
SBR6030L	Microsemi Corporation	DIODE SCHOTTKY 30V 60A DO203AB	Active	Schottky	30V	60A (DC)	480mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 30V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
CPD16-CMR1U06M-CT20	Central Semiconductor Corp	DIODE GP 600V 1A 120PCS	Active	Standard	600V	1A	1.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	-	Surface Mount	Die	Die	-65°C ~ 150°C
CPD24-CMR1F06M-CT20	Central Semiconductor Corp	DIODE GP 600V 1A 120PCS	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	-	Surface Mount	Die	Die	-65°C ~ 150°C
CPD69-CMR1-06M-CT20	Central Semiconductor Corp	DIODE GP 600V 1A 120PCS	Active	Standard	600V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 600V	-	Surface Mount	Die	Die	-65°C ~ 150°C
CPD83V-1N4148-CT20	Central Semiconductor Corp	DIODE GP 100V 200MA DIE 120	Active	Standard	100V	200mA (DC)	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Surface Mount	Die	Die	-65°C ~ 150°C
1N8030-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 750MA TO257	Active	Silicon Carbide Schottky	650V	750mA	1.39V @ 750mA	No Recovery Time > 500mA (Io)	0ns	5µA @ 650V	76pF @ 1V, 1MHz	Through Hole	TO-257-3	TO-257	-55°C ~ 250°C
1N8032-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 2.5A TO257	Active	Silicon Carbide Schottky	650V	2.5A	1.3V @ 2.5A	No Recovery Time > 500mA (Io)	0ns	5µA @ 650V	274pF @ 1V, 1MHz	Through Hole	TO-257-3	TO-257	-55°C ~ 250°C
1N8024-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 750MA TO257	Active	Silicon Carbide Schottky	1200V	750mA	1.74V @ 750mA	No Recovery Time > 500mA (Io)	0ns	10µA @ 1200V	66pF @ 1V, 1MHz	Through Hole	TO-257-3	TO-257	-55°C ~ 250°C
BAS21,235	Nexperia USA Inc.	DIODE GEN PURP 200V 200MA SOT23	Active	Standard	200V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)

Fabricants pour Diodes - Redresseurs - Simples